- Girish Rughoobur, J. Zhao, Lay Jain, Ahmad Zubair, Tomás Palacios, J. Kong, Akintunde Ibitayo Akinwande:
Enabling Atmospheric Operation of Nanoscale Vacuum Channel Transistors. DRC 2020: 1-2 - Jayatika Sakhuja, Sandip Lashkare, Vivek Saraswat, Udayan Ganguly:
Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching Speed. DRC 2020: 1-2 - Devansh Saraswat, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing:
Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts. DRC 2020: 1-2 - Mehdi Saremi, Ashish Pal, Liu Jiang, El Mehdi Bazizi, Helen Lee, Xi-Wei Lin, Blessy Alexander, Buvna Ayyagari-Sangamalli:
Modeling and Optimization of Advanced 3D NAND Memory. DRC 2020: 1-2 - Pao-Chuan Shih, Girish Rughoobur, Peng Xiang, Kai Liu, Kai Cheng, Akintunde Ibitayo Akinwande, Tomás Palacios:
GaN Nanowire Field Emitters with a Self-Aligned Gate Process. DRC 2020: 1-2 - Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Rohit R. Karnaty, Nirupam Hatui, Christian Wurm, Athith Krishna, Shubhra S. Pasayat, Stacia Keller, James F. Buckwalter, Umesh K. Mishra:
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT. DRC 2020: 1-2 - John Stearns, Garret Moddel:
High Frequency Characteristics of Graphene Geometric Diodes. DRC 2020: 1-2 - Ava J. Tan, Li-Chen Wang, Yu-Hung Liao, Jong-Ho Bae, Chenming Hu, Sayeef S. Salahuddin:
Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET. DRC 2020: 1-2 - Jun Tao, Debarghya Sarkar, Sizhe Weng, Hyun Uk Chae, Ragib Ahsan, Rehan Kapadia:
A Platform for Monolithic Back End of Line III-V Integration. DRC 2020: 1-2 - Niharika Thakuria, Atanu K. Saha, Sandeep Krishna Thirumala, Daniel Schulman, Saptarshi Das, Sumeet Kumar Gupta:
Polarization-induced Strain-coupled TMD FETs (PS FETs) for Non-Volatile Memory Applications. DRC 2020: 1-2 - Eldad Bahat-Treidel, Oliver Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, Joachim Würfl:
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications. DRC 2020: 1-2 - Xiaohan Wu, Ruijing Ge, Deji Akinwande, Jack C. Lee:
Understanding of Multiple Resistance States by Current-sweep Measurement and Compliance Current Modulation in 2D MoS2-based Non-volatile Resistance Switching Devices. DRC 2020: 1-2 - Chia-Chun Yen, An-Hung Tai, Yu-Chieh Liu, Chun-Hung Yeh, C. W. Liu:
Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double Layers. DRC 2020: 1-2 - Ahmad Zubair, John Niroula, Nadim Chowdhury, Yuhao Zhang, Jori Lemettinen, Tomás Palacios:
Materials and Technology Issues for the Next Generation of Power Electronic Devices. DRC 2020: 1-2 - Ahmad Zubair, Joshua A. Perozek, John Niroula, O. Aktas, V. Odnoblyudov, Tomás Palacios:
First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate. DRC 2020: 1-2 - 2020 Device Research Conference, DRC 2020, Columbus, OH, USA, June 21-24, 2020. IEEE 2020, ISBN 978-1-7281-7047-3 [contents]