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ORCID3DIC 2024: Sendai, Japan
- International 3D Systems Integration Conference, 3DIC 2024, Sendai, Japan, September 25-27, 2024. IEEE 2024, ISBN 979-8-3315-1650-5
- Shunya Nitta, Hiroaki Tatsumi, Hiroshi Nishikawa:
Creep Behavior of Low-Temperature Sn-In Solder Using Nanoindentation Test. 1-3 - Mariappan Murugesan, Hiroyuki Hashimoto, Kentaro Mihara, Takashi Hare, Takafumi Fukushima, Fumihiro Inoue, Akira Uedono:
Impact of Cu Pad Density on Cu-CMP and Bonding Yield for Chip-to-Wafer Hybrid Bonding. 1-5 - Akihiro Shimizu, Kazuhiro Fukada, Shinichi Endo, Mitsuru Abe, Akiko Matsui:
Direct Sputtered Copper Seed Layer Formation on Low Dielectric Resin to Reduce Transmission Loss. 1-4 - Du Zehua, Hiroshi Kikuchi, Hayato Hishinuma, Tetsu Tanaka, Takafumi Fukushima:
16-Layer 3D Stacking Based on Self-Assembly Technology for HBM Application. 1-3 - Tetsufumi Tanamoto
:
3D Stacked Spin Qubit by TCAD Simulations. 1-4 - Yuko Ishii, Takanobu Hamamura, Tomohiro Shimizu, Takeshi Ito, Shoso Shingubara:
TSV Formation Using a Direct CU Electroplating on Electroless Plated Barrier Layer with a Low Resistivity. 1-3 - Moeki Nakano, Shigenori Nagahama, Toshio Takahashi, Takuya Yamamoto:
A Temporary Bonding De-Bonding Tape with High Thermal Resistance, Easy peeling and Excellent TTV for 3DIC. 1-3 - Sunan Chen, Chao Wu, Yunlang Cai, Yuan Guan, Yuanqing Cheng:
3D SRAM Design & Optimization with Open Source Memory Compiler. 1-5 - Ayano Furue, Mastaka Hasegawa, Satoshi Matsumoto:
Impact of 2-Dimensional Materials for 3D Power IC. 1-5 - Akshat Hetal Patel, Ketan Yogi, Gopinath Sahu, Tiwei Wei:
A Novel Multi-Chip Cooling System Using Direct-on-Chip Jet Impingemnt for High-Performance Interposer Package. 1-6 - Bungo Tanaka, Tatsunori Shino, Murugesan Mariappan, Tetsu Tanaka, Takafumi Fukushima:
Characterization of Ozone-Ethylene Radical Pretreatment for Hybrid Bonding without Water Rinsing Processes. 1-4 - Junming Li, Huaguo Liang, Xianrui Dou, Le Yu, Zhengfeng Huang, Yingchun Lu, Cuiyun Jiang:
Machine Learning-Based Diagnosis of Defects in Chiplet Interconnects. 1-6 - H. L. Cheng, J. Y. Lin, T. C. Hsu, Eva Su, S. M. Wu, Y. C. Chang, T. H. Chien, C. Y. Peng, J. H. Yang, Felix Tsui, Shih-Fen Huang:
Ultra-High Density Deep Trench Capacitor (DTC) for 3DIC Integration. 1-3 - Ryo Aizawa, Masahiro Sawa, Jinta Nampo, Yurina Fukumoto, Murugesan Mariappan, Takafumi Fukushima:
Antioxidative Cu Electrodeposition for 3D Interconnects with Hybrid Bonding. 1-4 - Mohammad Alsukour, Olivier Valorge, Margot Faure, Loïc Vincent, Victor Milon, Pascal Chevalier, Emmanuel Pistono, Jean-Daniel Arnould, Christophe Dubarry:
Die-to-Wafer Hybrid Bonding Impact at MM-Wave Frequencies. 1-6 - Shuhei Yokota, Rikuu Hasegawa, Kazuki Monta, Takaaki Okidono, Takuji Miki, Makoto Nagata:
Thermal Flow Simuation and Measurements of 3D Si Chip Stacks with TSVs. 1-3 - Eren Kurshan, Paul D. Franzon:
Towards 3D AI Hardware: Fine-Grain Hardware Characterization of 3D Stacks for Heterogeneous System Integration & AI Systems. 1-6 - Alexandra Schewski, Ulrich Schaber, Armin Klumpp:
Superconducting Titanium Nitride in Through-Silicon Vias for 3D Integration of Qubits. 1-6 - Yusuke Ohgushi, Satoshi Matsumoto:
Gate Driver IC for GaN Power Device Suitable for 3D Power IC. 1-4 - Jiayi Shen, Chang Liu, Tetsu Tanaka, Takafumi Fukushima:
Room-Temperature and Compressive Force-Free Metal-Metal Direct Bonding for Heterogeneous Integration of Micro-LED Array on 3D-IC. 1-3 - Daiki Nemoto, Kai Takeuchi, Eiji Higurashi:
Plasma Hydrophilic Treatment for Improved Wafer Bonding Strength via Polysilazane. 1-3 - Akihiro Noriki, Hirotaka Uemura, Haruhiko Kuwatsuka, Naoki Matsui, Reona Motoji, Dan Maeda, Tomoya Sugita, Fumi Nakamura, Takeru Amano:
Thermal Analysis of Reflow Process for PIC-Embedded Package Substrate with 2.3D RDL Interposer for Co-Packaged Optics. 1-3 - Hamideh Jafarpoorchekab, Xiao Sun, Angel Uruena, Siddhartha Sinha, Nelson Pinho, Andy Miller, Nadine Collaert:
Process Development for a Novel Low Loss and Non-PFAS Photo Imageable Dielectric for RF Silicon Interposer Applications. 1-6 - Yu-Lun Liu, Chun-Ta Li, Tzu-Han Sun, Chien-Kang Hsiung, Yuan-Chiu Huang, Kuan-Neng Chen:
Cost-Effective Low-Temperature Hybrid Bonding Using Layer Transfer Technology. 1-4 - Jowesh Avisheik Goundar, La Thi Ngoc Mai, Moris Yuki, Otake Yugi, Hideo Kosaka, Fumihiro Inoue:
Electrochemical Deposition of Indium for Scalable 3D Quantum Chiplets. 1-4 - Yoshiaki Satake, Tatsuya Funaki, Wataru Doi, Hajime Kato, Shogo Okita, Takayuki Ohba:
Face-Down and Heterogeneous Chip Bonding Technology on Waffle-Wafer for Bumpless Chip-an-Wafer (COW) Package. 1-3 - Shinichi Endo, Akihiro Shimizu:
Activation of Copper Surfaces by VUV - Redox Method Using a Xenon Excimer Lamp. 1-3 - Tomoka Kirihata, Masanori Yamagishi, Ichiro Sano, Haruka Morita, Yusuke Fumita, Shinya Takyu:
A Novel Direct Transfer Bonding Process with Particle Less Tapes for Die to Wafer Integration. 1-5 - Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka:
Supression of TSV-Induced Stress by Using Negative Thermal Expansion Material. 1-3 - Hayato Hishinuma, Masaaki Miyatake, Hiroshi Kikuchi, Yuta Tobari:
Advanced Development of Squeeze Effect Non-Contact Handling Tool for Semiconductor Chips. 1-4 - Akito Hiro, Damien Jon Leech, Geert Schoofs, John Slabbekoorn, Alain Phommahaxay, Koen Kennes, Gerald Beyer, Eric Beyne:
Clean Dicing: An Alternative Blade Dicing Technique for Minimising Particles in 3D Heterogeneous Integration. 1-5 - Akihiro Tominaga, Jiayi Shen, Chang Liu, Atsushi Shinoda, Tetsu Tanaka, Takafumi Fukushima:
Temporary Adhesive Effect on Multichip Thinning for Rapid Prototyping of 3D-IC from 2D-IC Fabricated in Foundry Shuttle Services. 1-3 - Chih-Hsien Chiu, Wei-Ting Chen, Jenn-Ming Song:
Surface Modification for Ultrasonic Cu-to-Cu Direct Bonding. 1-4 - Tzu-Han Sun, Yu-Lun Liu, Chun-Ta Li, Wen-Tzu Tsai, Mu-Ping Hsu, Kuan-Neng Chen:
Low-Temperature Adhesive Hybrid Bonding Technology with Novel Area-Selective Passivation Layer. 1-4 - Yuya Yamahashi, Yuto Ohtera, Hiroyuki Yotsuyanagi, Shyue-Kung Lu, Masaki Hashizume:
Detectability of Resistive Open Defects with Analog Relaxation Oscillators Under Unit-to-Unit Variations of Dies. 1-5
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