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F. Brasseau

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2000 – 2009

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2005
[j2]
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  - journals/mr/IsmailMLTMBL05
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  - https://dblp.org/rec/journals/mr/IsmailMLTMBL05
Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean-Luc Muraro, F. Brasseau, D. Langrez:
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. Microelectron. Reliab. 45(9-11): 1611-1616 (2005)
2003
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Sabine Long, Laurent Escotte, Jacques Graffeuil, F. Brasseau, J. L. Cazaux:
On-wafer noise characterization of low-noise amplifiers in the Ka-band. IEEE Trans. Instrum. Meas. 52(5): 1606-1610 (2003)

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