default search action
Nathalie Labat
Person information
Refine list
refinements active!
zoomed in on ?? of ?? records
view refined list in
export refined list as
2020 – today
- 2023
- [c3]N. Said, Kathia Harrouche, Farid Medjdoub, Nathalie Labat, Jean-Guy Tartarin, Nathalie Malbert:
Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications. IRPS 2023: 1-5
2010 – 2019
- 2018
- [c2]Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat:
Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors. IRPS 2018: 4 - 2017
- [j33]Nathalie Labat, François Marc, Hélène Frémont, Marise Bafleur:
Proceedings of the 28th European Symposium on the reliability of electron devices, failure physics and analysis. Microelectron. Reliab. 76-77: 1-5 (2017) - [j32]Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat:
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. Microelectron. Reliab. 76-77: 350-356 (2017) - 2016
- [j31]H. Lakhdhar, Nathalie Labat, Arnaud Curutchet, Nicolas Defrance, Marie Lesecq, Jean-Claude de Jaeger, Nathalie Malbert:
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. Microelectron. Reliab. 64: 594-598 (2016) - 2015
- [j30]M. Rzin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Laurent Brunel, Benoit Lambert:
Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. Microelectron. Reliab. 55(9-10): 1672-1676 (2015) - [j29]Pamela Del Vecchio, Arnaud Curutchet, Yannick Deshayes, M. Bettiati, F. Laruelle, Nathalie Labat, Laurent Béchou:
Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes. Microelectron. Reliab. 55(9-10): 1741-1745 (2015) - 2013
- [j28]Nathalie Labat, François Marc:
Editorial. Microelectron. Reliab. 53(9-11): 1169-1170 (2013) - [j27]W. Ben Naceur, Nathalie Malbert, Nathalie Labat, Hélène Frémont, D. Carisetti, J. C. Clement, J. L. Muraro, Barbara Bonnet:
Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques. Microelectron. Reliab. 53(9-11): 1375-1380 (2013) - [j26]Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat:
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. Microelectron. Reliab. 53(9-11): 1450-1455 (2013) - [j25]S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau:
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. Microelectron. Reliab. 53(9-11): 1491-1495 (2013) - 2012
- [j24]Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, Jim Thorpe, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Eddy Latu-Romain, Michel Mermoux:
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. Microelectron. Reliab. 52(9-10): 2184-2187 (2012) - [c1]Laurent Brunel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat, Benoit Lambert:
Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements. ESSDERC 2012: 270-273 - 2011
- [j23]Nathalie Labat, François Marc:
Editorial. Microelectron. Reliab. 51(9-11): 1423-1424 (2011) - [j22]G. A. Koné, Brice Grandchamp, C. Hainaut, François Marc, Cristell Maneux, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean Godin:
Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses. Microelectron. Reliab. 51(9-11): 1730-1735 (2011) - [j21]A. Aubert, Sébastien Jacques, S. Pétremont, Nathalie Labat, Hélène Frémont:
Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow. Microelectron. Reliab. 51(9-11): 1845-1849 (2011) - 2010
- [j20]Mustapha Faqir, Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, Giovanni Verzellesi, Fausto Fantini:
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. Microelectron. Reliab. 50(9-11): 1520-1522 (2010) - [j19]G. A. Koné, Brice Grandchamp, C. Hainaut, François Marc, Cristell Maneux, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Jean Godin:
Preliminary results of storage accelerated aging test on InP/InGaAs DHBT. Microelectron. Reliab. 50(9-11): 1548-1553 (2010) - [j18]A. Aubert, J. P. Rebrasse, Lionel Dantas de Morais, Nathalie Labat, Hélène Frémont:
Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing. Microelectron. Reliab. 50(9-11): 1688-1691 (2010)
2000 – 2009
- 2009
- [j17]Dean Lewis, Nathalie Labat:
Editorial. Microelectron. Reliab. 49(9-11): 935-936 (2009) - [j16]Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, Nicolas Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, Jean-Marie Bluet, W. Chikhaoui:
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. Microelectron. Reliab. 49(9-11): 1216-1221 (2009) - 2008
- [j15]Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Philippe Perdu, J. C. Clement, Benoit Lambert, M. Bonnet:
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. Microelectron. Reliab. 48(8-9): 1366-1369 (2008) - 2007
- [j14]Nathalie Labat, André Touboul:
Editorial. Microelectron. Reliab. 47(9-11): 1311-1312 (2007) - [j13]Mohsine Bouya, D. Carisetti, Nathalie Malbert, Nathalie Labat, Philippe Perdu, J. C. Clement, M. Bonnet, G. Pataut:
Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC. Microelectron. Reliab. 47(9-11): 1630-1633 (2007) - [j12]Mustapha Faqir, Giovanni Verzellesi, Fausto Fantini, Francesca Danesin, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua:
Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs. Microelectron. Reliab. 47(9-11): 1639-1642 (2007) - 2006
- [j11]A. Sozza, Arnaud Curutchet, Christian Dua, Nathalie Malbert, Nathalie Labat, André Touboul:
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. Microelectron. Reliab. 46(9-11): 1725-1730 (2006) - 2005
- [j10]Nathalie Labat:
Editorial. Microelectron. Reliab. 45(9-11): 1275-1276 (2005) - [j9]Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean-Luc Muraro, F. Brasseau, D. Langrez:
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. Microelectron. Reliab. 45(9-11): 1611-1616 (2005) - 2004
- [j8]Nathalie Labat, Nathalie Malbert, Cristell Maneux, André Touboul:
Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors. Microelectron. Reliab. 44(9-11): 1361-1368 (2004) - [j7]Brice Grandchamp, Cristell Maneux, Nathalie Labat, André Touboul, Thomas Zimmer:
On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise. Microelectron. Reliab. 44(9-11): 1387-1392 (2004) - 2003
- [j6]Nathalie Labat, André Touboul:
Editorial. Microelectron. Reliab. 43(9-11): 1351-1352 (2003) - [j5]Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren:
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectron. Reliab. 43(9-11): 1713-1718 (2003) - [j4]J. C. Martin, Cristell Maneux, Nathalie Labat, André Touboul, Muriel Riet, S. Blayac, M. Kahn, Jean Godin:
1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses. Microelectron. Reliab. 43(9-11): 1725-1730 (2003) - [j3]Mohamed Belhaj, Cristell Maneux, Nathalie Labat, André Touboul, Philippe Bove:
High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects. Microelectron. Reliab. 43(9-11): 1731-1736 (2003) - 2002
- [j2]Nathalie Labat, Nathalie Malbert, Benoit Lambert, André Touboul, F. Garat, B. Proust:
Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. Microelectron. Reliab. 42(9-11): 1575-1580 (2002) - 2001
- [j1]Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut:
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. Microelectron. Reliab. 41(9-10): 1573-1578 (2001)
Coauthor Index
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.
Unpaywalled article links
Add open access links from to the list of external document links (if available).
Privacy notice: By enabling the option above, your browser will contact the API of unpaywall.org to load hyperlinks to open access articles. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Unpaywall privacy policy.
Archived links via Wayback Machine
For web page which are no longer available, try to retrieve content from the of the Internet Archive (if available).
Privacy notice: By enabling the option above, your browser will contact the API of archive.org to check for archived content of web pages that are no longer available. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Internet Archive privacy policy.
Reference lists
Add a list of references from , , and to record detail pages.
load references from crossref.org and opencitations.net
Privacy notice: By enabling the option above, your browser will contact the APIs of crossref.org, opencitations.net, and semanticscholar.org to load article reference information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Crossref privacy policy and the OpenCitations privacy policy, as well as the AI2 Privacy Policy covering Semantic Scholar.
Citation data
Add a list of citing articles from and to record detail pages.
load citations from opencitations.net
Privacy notice: By enabling the option above, your browser will contact the API of opencitations.net and semanticscholar.org to load citation information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the OpenCitations privacy policy as well as the AI2 Privacy Policy covering Semantic Scholar.
OpenAlex data
Load additional information about publications from .
Privacy notice: By enabling the option above, your browser will contact the API of openalex.org to load additional information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the information given by OpenAlex.
last updated on 2024-05-08 21:04 CEST by the dblp team
all metadata released as open data under CC0 1.0 license
see also: Terms of Use | Privacy Policy | Imprint