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Chen Sun 0010
Person information
- affiliation: National University of Singapore, NUS, Department of Electrical and Computer Engineering, Singapore
Other persons with the same name
- Chen Sun — disambiguation page
- Chen Sun 0001 — National Institute of Information and Communications Technology, Yokosuka, Japan
- Chen Sun 0002 — Brown University, Department of Computer Science, Providence, RI, USA (and 3 more)
- Chen Sun 0003 — Intel Corporation, USA (and 3 more)
- Chen Sun 0004
— Southeast University, National Mobile Communications Research Laboratory and Purple Mountain Laboratory, Nanjing, China (and 2 more)
- Chen Sun 0005
— Alibaba Group, Hangzhou, China (and 1 more)
- Chen Sun 0006
— Sony China Research Laboratory, Beijing, China (and 3 more)
- Chen Sun 0007
— University of Montréal, Mila, QC, Canada (and 1 more)
- Chen Sun 0008
— University of Waterloo, Department of Mechanical and Mechatronics Engineering, Faculty of Engineering, ON, Canada
- Chen Sun 0011
— University of Manchester, UK (and 2 more)
- Chen Sun 0012
— Beihang University Aeronautics and Astronautics, School of Energy and Power Engineering, Beijing, China
- Chen Sun 0013 — Jiangsu Normal University, School of Geography, Geomatics and Planning, Xuzhou, China
- Chen Sun 0014
— Pennsylvania State University, Department of Computer Science and Engineering, PA, USA
- Chen Sun 0015
— Huazhong University of Science and Technology, State Key Laboratory of Digital Manufacturing Equipment and Technology, China
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2020 – today
- 2024
- [j2]Chao Li, Chen Sun, Jianyi Yang, Kai Ni, Xiao Gong, Cheng Zhuo, Xunzhao Yin:
Multibit Content Addressable Memory Design and Optimization Based on 3-D nand-Compatible IGZO Flash. IEEE Trans. Very Large Scale Integr. Syst. 32(8): 1380-1388 (2024) - 2023
- [j1]Wenjun Tang
, Jialong Liu
, Chen Sun
, Zijie Zheng
, Yongpan Liu
, Huazhong Yang
, Chen Jiang
, Kai Ni
, Xiao Gong
, Xueqing Li
:
Low-Power and Scalable BEOL-Compatible IGZO TFT eDRAM-Based Charge-Domain Computing. IEEE Trans. Circuits Syst. I Regul. Pap. 70(12): 5166-5179 (2023) - [c11]Xiaolin Wang, Zijie Zheng, Qiwen Kong, Leming Jiao, Kaizhen Han, Chen Sun, Zuopu Zhou, Long Liu, Yuye Kang, Gan Liu, Dong Zhang, Xiao Gong:
First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm, > 2×109 Endurance, and 58.3% Area Saving. VLSI Technology and Circuits 2023: 1-2 - [c10]Dong Zhang, Jixuan Wu, Qiwen Kong, Zuopu Zhou, Long Liu, Kaizhen Han, Chen Sun, Xiaolin Wang, Gan Liu, Leming Jiao, Zijie Zheng, Yuye Kang, Jiezhi Chen, Xiao Gong:
Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding. VLSI Technology and Circuits 2023: 1-2 - [c9]Zijie Zheng, Leming Jiao, Zuopu Zhou, Yuxuan Wang, Long Liu, Kaizhen Han, Chen Sun, Qiwen Kong, Dong Zhang, Xiaolin Wang, Kai Ni, Xiao Gong:
First Demonstration of Work Function-Engineered BEOL-Compatible IGZO Non-Volatile MFMIS AFeFETs and Their Co-Integration with Volatile-AFeFETs. VLSI Technology and Circuits 2023: 1-2 - [c8]Zuopu Zhou, Leming Jiao, Qiwen Kong, Zijie Zheng, Kaizhen Han, Yue Chen, Chen Sun, Bich-Yen Nguyen, Xiao Gong:
Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F2 High-Density Integration. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c7]Leming Jiao, Zuopu Zhou, Zijie Zheng, Yuye Kang, Chen Sun, Qiwen Kong, Xiaolin Wang
, Dong Zhang, Gan Liu, Long Liu, Xiao Gong:
BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application. ICICDT 2022: 5-7 - [c6]Chengkuan Wang, Annie Kumar, Kaizhen Han, Chen Sun, Haiwen Xu, Jishen Zhang, Yuye Kang, Qiwen Kong, Zijie Zheng, Yuxuan Wang, Xiao Gong:
Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V). VLSI Technology and Circuits 2022: 294-295 - [c5]Zijie Zheng, Chen Sun, Leming Jiao, Dong Zhang, Zuopu Zhou, Xiaolin Wang
, Gan Liu, Qiwen Kong, Yue Chen, Kai Ni, Xiao Gong:
Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection. VLSI Technology and Circuits 2022: 389-390 - [c4]Yue Chen, Gong Zhang, Jiuren Zhou, Zijie Zheng, Leming Jiao, Haibo Wang, Zuopu Zhou, Annie Kumar, Jishen Zhang, Yuxuan Wang, Qiwen Kong, Chen Sun, Xiao Gong:
First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit. VLSI Technology and Circuits 2022: 405-406 - [c3]Jishen Zhang, Haiwen Xu, Kian Hua Tan, Satrio Wicaksono, Qiwen Kong, Gong Zhang, Yue Chen, Chen Sun, Haibo Wang, Chao Wang, Zijie Zheng, Leming Jiao, Zuopu Zhou, Charles Ci Wen Lim, Soon-Fatt Yoon, Xiao Gong:
First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform. VLSI Technology and Circuits 2022: 409-410 - 2021
- [c2]Jishen Zhang, Haiwen Xu, Gong Zhang, Yue Chen, Haibo Wang, Kian Hua Tan, Satrio Wicaksono, Chao Wang, Chen Sun, Qiwen Kong, Charles Ci Wen Lim, Soon-Fatt Yoon, Xiao Gong:
First InGaAs/InAlAs Single-Photon Avalanche Diodes (SPADs) Heterogeneously Integrated with Si Photonics on SOI Platform for 1550 nm Detection. VLSI Circuits 2021: 1-2
2010 – 2019
- 2019
- [c1]Chen Sun, Kaizhen Han, Xiao Gong:
Performance Evaluation of Static Random Access Memory (SRAM) based on Negative Capacitance FinFET. ICICDT 2019: 1-4
Coauthor Index
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last updated on 2024-08-19 20:40 CEST by the dblp team
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