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ORCIDMichael Graef
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2010 – 2019
- 2017
[c9]Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad
, Benjamín Iñíguez, Alexander Kloes:
Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs. MIXDES 2017: 127-131- 2016
- [c8]Fabian Horst, Michael Graef, Fabian Hosenfeld, Atieh Farokhnejad, Franziska Hain, Gia Vinh Luong, Qing-Tai Zhao, Benjamín Iñíguez, Alexander Kloes:
Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation. ESSDERC 2016: 456-459 - [c7]Michael Graef, Franziska Hain, Fabian Hosenfeld, Fabian Horst, Atieh Farokhnejad, Alexander Kloes, Benjamín Iñíguez:
Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs. MIXDES 2016: 47-51 - [c6]Fabian Hosenfeld, Michael Graef, Fabian Horst, Alexander Kloes, Benjamín Iñíguez, François Lime:
Modeling approach for rapid NEGF-based simulation of ballistic current in ultra-short DG MOSFETs. MIXDES 2016: 52-57 - 2015
- [c5]Atieh Farokhnejad, Michael Graef, Alexander Kloes:
Wavelet-based calculation of the transmission coefficient for tunneling events in Tunnel-FETs. MIXDES 2015: 210-215 - 2014
- [j2]Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez:
A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current. Microelectron. J. 45(9): 1144-1153 (2014) - [j1]Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez:
Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects. Microelectron. J. 45(9): 1220-1225 (2014) - [c4]Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez:
3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs. ESSDERC 2014: 258-261 - [c3]Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez:
Improved analytical potential modeling in double-gate tunnel-FETs. MIXDES 2014: 49-53 - 2013
- [c2]Thomas Holtij, Michael Graef, Franziska Hain, Alexander Kloes, Benjamín Iñíguez:
Unified charge model for short-channel junctionless double gate MOSFETs. MIXDES 2013: 75-80 - [c1]Michael Graef, Thomas Holtij, Franziska Hain, Alexander Kloes, Benjamín Iñíguez:
Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs. MIXDES 2013: 81-85
Coauthor Index
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