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ORCIDMasaaki Higashitani
- > Home > Persons > Masaaki Higashitani
Publications
- 2012
[j6]Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Jumpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Takeshi Ogawa, Toshiaki Edahiro, Makoto Iwai, Osamu Nagao, Junji Musha, Takatoshi Minamoto, Yuka Furuta, Kosuke Yanagidaira, Yuya Suzuki, Dai Nakamura, Yoshikazu Hosomura, Rieko Tanaka, Hiromitsu Komai, Mai Muramoto, Go Shikata, Ayako Yuminaka, Kiyofumi Sakurai, Manabu Sakai, Hong Ding, Mitsuyuki Watanabe, Yosuke Kato, Toru Miwa, Alex Mak, Masaru Nakamichi, Gertjan Hemink, Dana Lee, Masaaki Higashitani, Brian Murphy, Bo Lei, Yasuhiko Matsunaga, Kiyomi Naruke, Takahiko Hara:
A 151-mm2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology. IEEE J. Solid State Circuits 47(1): 75-84 (2012)- 2011
- [c6]Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Jumpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Takeshi Ogawa, Makoto Iwai, Osamu Nagao, Junji Musha, Takatoshi Minamoto, Kosuke Yanagidaira, Yuya Suzuki, Dai Nakamura, Yoshikazu Hosomura, Hiromitsu Komai, Yuka Furuta, Mai Muramoto, Rieko Tanaka, Go Shikata, Ayako Yuminaka, Kiyofumi Sakurai, Manabu Sakai, Hong Ding, Mitsuyuki Watanabe, Yosuke Kato, Toru Miwa, Alex Mak, Masaru Nakamichi, Gertjan Hemink, Dana Lee, Masaaki Higashitani, Brian Murphy, Bo Lei, Yasuhiko Matsunaga, Kiyomi Naruke, Takahiko Hara:
A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology. ISSCC 2011: 198-199 - 2009
- [j4]Yan Li, Seungpil Lee, Yupin Fong, Feng Pan, Tien-Chien Kuo, Jongmin Park, Tapan Samaddar, Hao Nguyen, Man Mui, Khin Htoo, Teruhiko Kamei, Masaaki Higashitani, Emilio Yero, Gyuwan Kwon, Phil Kliza, Jun Wan, Tetsuya Kaneko, Hiroshi Maejima, Hitoshi Shiga, Makoto Hamada, Norihiro Fujita, Kazunori Kanebako, Eugene Tam, Anne Koh, Iris Lu, Calvin Chia-Hong Kuo, Trung Pham, Jonathan Huynh, Qui Nguyen, Hardwell Chibvongodze, Mitsuyuki Watanabe, Ken Oowada, Grishma Shah, Byungki Woo, Ray Gao, Jim Chan, James Lan, Patrick Hong, Liping Peng, Debi Das, Dhritiman Ghosh, Vivek Kalluru, Sanjay Kulkarni, Raul-Adrian Cernea, Sharon Huynh, Dimitris Pantelakis, Chi-Ming Wang, Khandker Quader:
A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate. IEEE J. Solid State Circuits 44(1): 195-207 (2009) - 2008
- [c2]Yan Li, Seungpil Lee, Yupin Fong, Feng Pan, Tien-Chien Kuo, Jong Park, Tapan Samaddar, Hao Nguyen, Man Mui, Khin Htoo, Teruhiko Kamei, Masaaki Higashitani, Emilio Yero, Gyuwan Kwon, Phil Kliza, Jun Wan, Tetsuya Kaneko, Hiroshi Maejima, Hitoshi Shiga, Makoto Hamada, Norihiro Fujita, Kazunori Kanebako, Eugene Tam, Anne Koh, Iris Lu, Calvin Chia-Hong Kuo, Trung Pham, Jonathan Huynh, Qui Nguyen, Hardwell Chibvongodze, Mitsuyuki Watanabe, Ken Oowada, Grishma Shah, Byungki Woo, Ray Gao, Jim Chan, James Lan, Patrick Hong, Liping Peng, Debi Das, Dhritiman Ghosh, Vivek Kalluru, Sanjay Kulkarni, Raul Cernea, Sharon Huynh, Dimitris Pantelakis, Chi-Ming Wang, Khandker Quader:
A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate. ISSCC 2008: 506-507 - 2007
- [j3]Ken Takeuchi, Yasushi Kameda, Susumu Fujimura, Hiroyuki Otake, Koji Hosono, Hitoshi Shiga, Yoshihisa Watanabe, Takuya Futatsuyama, Yoshihiko Shindo, Masatsugu Kojima, Makoto Iwai, Masanobu Shirakawa, Masayuki Ichige, Kazuo Hatakeyama, Shinichi Tanaka, Teruhiko Kamei, Jia-Yi Fu, Adi Cernea, Yan Li, Masaaki Higashitani, Gertjan Hemink, Shinji Sato, Ken Oowada, Shih-Chung Lee, Naoki Hayashida, Jun Wan, Jeffrey Lutze, Shouchang Tsao, Mehrdad Mofidi, Kiyofumi Sakurai, Naoya Tokiwa, Hiroko Waki, Yasumitsu Nozawa, Kazuhisa Kanazawa, Shigeo Ohshima:
A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput. IEEE J. Solid State Circuits 42(1): 219-232 (2007) - 2006
- [c1]Ken Takeuchi, Yasushi Kameda, Susumu Fujimura, Hiroyuki Otake, Koji Hosono, Hitoshi Shiga, Yoshihisa Watanabe, Takuya Futatsuyama, Yoshihiko Shindo, Masatsugu Kojima, Makoto Iwai, Masanobu Shirakawa, Masayuki Ichige, Kazuo Hatakeyama, Shinichi Tanaka, Teruhiko Kamei, Jia-Yi Fu, Adi Cernea, Yan Li, Masaaki Higashitani, Gertjan Hemink, Shinji Sato, Ken Oowada, Shih-Chung Lee, Naoki Hayashida, Jun Wan, Jeffrey Lutze, Shouchang Tsao, Mehrdad Mofidi, Kiyofumi Sakurai, Naoya Tokiwa, Hiroko Waki, Yasumitsu Nozawa, Kazuhisa Kanazawa, Shigeo Ohshima:
A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput. ISSCC 2006: 507-516
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