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Manuel Aldegunde
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2010 – 2019
- 2017
- [c6]Muhammad A. Elmessary
, Daniel Nagy
, Manuel Aldegunde, Antonio J. García-Loureiro
, Karol Kalna
:
Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations. ESSDERC 2017: 184-187 - 2016
- [j8]Manuel Aldegunde, James R. Kermode
, Nicholas Zabaras:
Development of an exchange-correlation functional with uncertainty quantification capabilities for density functional theory. J. Comput. Phys. 311: 173-195 (2016) - [j7]Manuel Aldegunde
, Nicholas Zabaras, Jesper Kristensen:
Quantifying uncertainties in first-principles alloy thermodynamics using cluster expansions. J. Comput. Phys. 323: 17-44 (2016) - 2015
- [j6]Manuel Aldegunde
, Karol Kalna
:
Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes. Comput. Phys. Commun. 189: 31-36 (2015) - [j5]Guillermo Indalecio Fernández, Natalia Seoane
, Manuel Aldegunde
, Karol Kalna
, Antonio J. García-Loureiro
:
Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold. J. Low Power Electron. 11(2): 256-262 (2015) - 2014
- [c5]R. Valín, Antonio Martinez, Manuel Aldegunde
, John R. Barker:
Impact of discrete dopants on an ultra-scaled FinFET using quantum transport simulations. ESSDERC 2014: 345-348 - 2013
- [j4]Enrique Comesaña
, Manuel Aldegunde
, Antonio J. García-Loureiro
:
Simulation of the spin polarization and the charge transport in Zener tunnel junctions based on ferromagnetic GaAs and ZnO. Comput. Phys. Commun. 184(3): 746-756 (2013) - [j3]Raúl Valín Ferreiro, Carlos Sampedro
, Natalia Seoane
, Manuel Aldegunde
, Antonio J. García-Loureiro
, Andres Godoy
, Francisco Gámiz
:
Optimisation and parallelisation of a 2D MOSFET multi-subband ensemble Monte Carlo simulator. Int. J. High Perform. Comput. Appl. 27(4): 483-492 (2013) - 2012
- [c4]Guillermo Indalecio Fernández, Antonio J. García-Loureiro
, Manuel Aldegunde
:
Static multipole method applied to boundary conditions for semiconductor device simulations. HPCS 2012: 654-659 - 2011
- [j2]Antonio J. García-Loureiro
, Natalia Seoane
, Manuel Aldegunde
, Raúl Valín Ferreiro, Asen Asenov, Antonio Martinez, Karol Kalna
:
Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 30(6): 841-851 (2011) - 2010
- [j1]Manuel Aldegunde
, Natalia Seoane
, Antonio J. García-Loureiro
, Karol Kalna
:
Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes. Comput. Phys. Commun. 181(1): 24-34 (2010)
2000 – 2009
- 2009
- [c3]Raúl Valín Ferreiro, Natalia Seoane
, Manuel Aldegunde
, Antonio J. García-Loureiro
:
The MOSFET Virtual Organisation: Grid Computing for Simulation in Nanoelectronics. eScience 2009: 271-276 - 2007
- [c2]Manuel Aldegunde
, Antonio J. García-Loureiro
, Karol Kalna
:
Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs. LSSC 2007: 115-122 - 2005
- [c1]Juan J. Pombo, Manuel Aldegunde, Antonio J. García-Loureiro:
Optimization of an Octree-based 3-D Parallel Meshing Algorithm for the Simulation of Small-Feature Semiconductor Devices. PARCO 2005: 439-446
Coauthor Index
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