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ORCIDAlain Bensoussan 0002
Person information
- affiliation: Thales Alenia Space, Toulouse, France
Other persons with the same name
- Alain Bensoussan 0001
![[0000-0003-2465-1249]](https://dblp.dagstuhl.de/img/orcid-mark.12x12.png "0000-0003-2465-1249")
— City University of Hong Kong (and 1 more)
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2020 – today
- 2023
[c2]Joseph B. Bernstein, Emmanuel Bender, Alain Bensoussan:
The Correct Hot Carrier Degradation Model. IRPS 2023: 1-5
2010 – 2019
- 2018
- [j6]Omar Chihani, L. Théolier, Alain Bensoussan, Jean-Yves Delétage, André Durier, Eric Woirgard:
Effect of HTRB lifetest on AlGaN/GaN HEMTs under different voltages and temperatures stresses. Microelectron. Reliab. 88-90: 402-405 (2018) - [c1]Omar Chihani, Loic Théolier, Jean-Yves Delétage, Eric Woirgard, Alain Bensoussan, André Durier:
Temperature and voltage effects on HTRB and HTGB stresses for AlGaN/GaN HEMTs. IRPS 2018: 2-1 - 2017
- [j5]Joseph B. Bernstein, Alain Bensoussan, Emmanuel Bender:
Reliability prediction with MTOL. Microelectron. Reliab. 68: 91-97 (2017) - 2016
- [j4]Alain Bensoussan:
How to quantify and predict long term multiple stress operation: Application to Normally-Off Power GaN transistor technologies. Microelectron. Reliab. 58: 103-112 (2016) - 2015
- [j3]Alain Bensoussan, Ephraim Suhir, Philip Henderson, Mustapha Zahir:
A unified multiple stress reliability model for microelectronic devices - Application to 1.55 μm DFB laser diode module for space validation. Microelectron. Reliab. 55(9-10): 1729-1735 (2015) - [j2]André Durier, Alain Bensoussan, Moustafa Zerarka, Chaimae Ghfiri, Alexandre Boyer, Hélène Frémont:
A methodologic project to characterize and model COTS component reliability. Microelectron. Reliab. 55(9-10): 2097-2102 (2015) - 2013
- [j1]Alain Bensoussan, Ronan Marec, Jean Luc Muraro, L. Portal, Philippe Calvel, Catherine Barillot, Marie Genevieve Perichaud, Laurent Marchand, Gael Vignon:
GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing. Microelectron. Reliab. 53(9-11): 1466-1470 (2013)
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