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ORCIDGa-Won Lee 0001
Person information
- affiliation: Chungnam National University, Department of Electronics Engineering, Daejeon, Korea
Other persons with the same name
- Ga-Won Lee 0002
![[0000-0002-6411-4467]](https://dblp.dagstuhl.de/img/orcid-mark.12x12.png "0000-0002-6411-4467")
— Kyung Hee University, Department of Computer Science and Engineering, Cloud Computing and Security Lab, Yongin-si, Korea - Ga Won Lee 0003 — Seoul National University, Department of Mathematical Sciences. Korea
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2020 – today
- 2023
[c3]Seongho Kim, Young-Keun Park, Gyu Soup Lee, Eui Joong Shin, Woon-San Ko, Hi Deok Lee, Ga-Won Lee, Byung Jin Cho:
Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor. VLSI Technology and Circuits 2023: 1-2- 2022
- [j4]Ki-Nam Kim, Woon-San Ko, Jun-Ho Byun, Do-Yeon Lee, Jun-Kyo Jeong, Hi-Deok Lee, Ga-Won Lee:
Bottom-Gated ZnO TFT Pressure Sensor with 1D Nanorods. Sensors 22(22): 8907 (2022) - 2020
- [c2]Jun-Kyo Jeong, Jae-Young Sung, Hee-Hun Yang, Hi-Deok Lee, Ga-Won Lee:
Reliability Analysis by Charge Migration of 3D SONOS Flash Memory. IRPS 2020: 1-5 - [c1]Hyeong-Sub Song, Sunil Babu Eadi, Hyun-Dong Song, Hyun-Woong Choi, Ga-Won Lee, Hi-Deok Lee:
Investigation of Random Telegraph Noise Characteristics with Intentional Hot Carrier Aging. IRPS 2020: 1-4
2010 – 2019
- 2012
- [j3]Sang-Youl Lee, Seung-Dong Yang, Jae-Sub Oh, Ho-Jin Yun, Kwang-Seok Jeong, Yu-Mi Kim, Hi-Deok Lee, Ga-Won Lee:
Comparative Analysis of Bandgap-Engineered Pillar Type Flash Memory with HfO2 and S3N4 as Trapping Layer. IEICE Trans. Electron. 95-C(5): 831-836 (2012) - 2011
- [j2]Young Su Kim, Min Ho Kang, Kang Suk Jeong, Jae Sub Oh, Yu Mi Kim, Dong Eun Yoo, Hi Deok Lee, Ga Won Lee:
Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer. IEICE Trans. Electron. 94-C(5): 786-790 (2011) - 2010
- [j1]Jae Sub Oh, Kwang Il Choi, Young Su Kim, Min Ho Kang, Myeong Ho Song, Sung Kyu Lim, Dong Eun Yoo, Jeong Gyu Park, Hi Deok Lee, Ga Won Lee:
SONOS-Type Flash Memory with HfO2 Thinner than 4 nm as Trapping Layer Using Atomic Layer Deposition. IEICE Trans. Electron. 93-C(5): 590-595 (2010)
Coauthor Index
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