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Niccolò Rinaldi
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- affiliation: University of Naples Federico II, Italy
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2010 – 2019
- 2018
- [j14]Lorenzo Codecasa, Robin Bornoff, James Dyson, Vincenzo d'Alessandro, Alessandro Magnani, Niccolò Rinaldi:
Versatile MOR-based boundary condition independent compact thermal models with multiple heat sources. Microelectron. Reliab. 87: 194-205 (2018) - [j13]Brice Rogié, Lorenzo Codecasa, Eric Monier-Vinard, Valentin Bissuel, Najib Laraqi, Olivier Daniel, Dario D'Amore, Alessandro Magnani, Vincenzo d'Alessandro, Niccolò Rinaldi:
Multi-port dynamic compact thermal models of dual-chip package using model order reduction and metaheuristic optimization. Microelectron. Reliab. 87: 222-231 (2018) - 2017
- [j12]Vincenzo d'Alessandro, Antonio Pio Catalano, Alessandro Magnani, Lorenzo Codecasa, Niccolò Rinaldi, Brian Moser, Peter J. Zampardi:
Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies. Microelectron. Reliab. 78: 233-242 (2017) - [j11]Lorenzo Codecasa, Vincenzo d'Alessandro, Alessandro Magnani, Niccolò Rinaldi, Andre G. Metzger, Robin Bornoff, John Parry:
Partition-based approach to parametric dynamic compact thermal modeling. Microelectron. Reliab. 79: 361-370 (2017) - [j10]Lorenzo Codecasa, Vincenzo d'Alessandro, Alessandro Magnani, Niccolò Rinaldi:
3-D thermal models calibration by parametric dynamic compact thermal models. Microelectron. Reliab. 79: 371-379 (2017) - [j9]Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Böck, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer:
Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proc. IEEE 105(6): 1035-1050 (2017) - 2016
- [j8]Vincenzo d'Alessandro, Alessandro Magnani, Lorenzo Codecasa, Niccolò Rinaldi, Klaus Aufinger:
Advanced thermal simulation of SiGe: C HBTs including back-end-of-line. Microelectron. Reliab. 67: 38-45 (2016) - 2015
- [j7]Lorenzo Codecasa, Vincenzo d'Alessandro, Alessandro Magnani, Niccolò Rinaldi:
Structure-preserving approach to multi-port dynamic compact models of nonlinear heat conduction. Microelectron. J. 46(12): 1129-1137 (2015) - [j6]Thomas Jacquet, Grazia Sasso, Anjan Chakravorty, Niccolò Rinaldi, Klaus Aufinger, Thomas Zimmer, Vincenzo d'Alessandro, Cristell Maneux:
Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit. Microelectron. Reliab. 55(9-10): 1433-1437 (2015) - 2013
- [j5]Andre G. Metzger, Vincenzo d'Alessandro, Niccolò Rinaldi, Peter J. Zampardi:
Evaluation of thermal balancing techniques in InGaP/GaAs HBT power arrays for wireless handset power amplifiers. Microelectron. Reliab. 53(9-11): 1471-1475 (2013) - [j4]Vincenzo d'Alessandro, Alessandro Magnani, Michele Riccio, Yohei Iwahashi, Giovanni Breglio, Niccolò Rinaldi, Andrea Irace:
Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations. Microelectron. Reliab. 53(9-11): 1713-1718 (2013) - [c2]Alessandro Magnani, Vincenzo d'Alessandro, Niccolò Rinaldi, Massimiliano de Magistris, Klaus Aufinger:
Dynamic electrothermal macromodeling techniques for thermal-aware design of circuits and systems. PATMOS 2013: 227-230 - 2012
- [j3]Maurizio Costagliola, Davide De Caro, Antonio Girardi, Roberto Izzi, Niccolò Rinaldi, Marco Spirito, Paolo Spirito:
An Experimental Power-Lines Model for Digital ASICs Based on Transmission Lines. IEEE Trans. Very Large Scale Integr. Syst. 20(1): 162-166 (2012) - 2010
- [j2]Grazia Sasso, Maurizio Costagliola, Niccolò Rinaldi:
Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs. Microelectron. Reliab. 50(9-11): 1577-1580 (2010)
2000 – 2009
- 2004
- [c1]Zbigniew Lisik, Janusz Wozny, Malgorzata Langer, Niccolò Rinaldi:
Analytical Solutions of the Diffusive Heat Equation as the Application for Multi-cellular Device Modeling - A Numerical Aspect. International Conference on Computational Science 2004: 1021-1028
1990 – 1999
- 1996
- [j1]Niccolò F. Rinaldi:
Fast and simple method for calculating the minority-carrier current in arbitrarily doped semiconductors. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 15(8): 1025-1026 (1996)
Coauthor Index
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