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En-xia Zhang
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2020 – today
- 2023
- [c3]Sajal Islam
, Aditha S. Senarath, Arijit Sengupta, En-xia Zhang, Dennis R. Ball, Daniel M. Fleetwood, Ronald D. Schrimpf, Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, James S. Speck:
Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate. DRC 2023: 1-2 - 2021
- [c2]Peng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng Fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf:
Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs. ASICON 2021: 1-4
2010 – 2019
- 2015
- [c1]A. Sasikumar, Z. Zhang, P. Kumar, En-xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Paul Saunier, Cathy Lee, S. A. Ringel, A. R. Arehart:
Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs. IRPS 2015: 2 - 2014
- [j4]Cher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis:
Total-ionizing-dose effects and reliability of carbon nanotube FET devices. Microelectron. Reliab. 54(11): 2355-2359 (2014) - 2011
- [j3]Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf
, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides:
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. Microelectron. Reliab. 51(2): 212-216 (2011) - [j2]R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf
, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, Julien Mekki, Antoine D. Touboul, Frédéric Saigné:
High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. Microelectron. Reliab. 51(12): 2093-2096 (2011)
2000 – 2009
- 2008
- [j1]Wei He, Zheng-xuan Zhang, En-xia Zhang, Wenjie Yu, Hao Tian, Xi Wang:
Practical considerations in the design of SRAM cells on SOI. Microelectron. J. 39(12): 1829-1833 (2008)
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