"Influence of fluorine-based dry etching on electrical parameters of ..."

Davide Bisi et al. (2013)

> Home

Details and statistics

DOI: 10.1109/ESSDERC.2013.6818819

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-07

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/essderc/BisiMSCPNLZM13
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/essderc/BisiMSCPNLZM13
Davide Bisi, Matteo Meneghini, Antonio Stocco, Giulia Cibin, Alessio Pantellini, Antonio Nanni, Claudio Lanzieri, Enrico Zanoni, Gaudenzio Meneghesso:
Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. ESSDERC 2013: 61-64

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.