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ORCIDEnrico Zanoni
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2020 – today
- 2024
[c40]M. Boito, Manuel Fregolent, Carlo De Santi
, A. Abbisogni, S. Smerzi, Isabella Rossetto, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach. IRPS 2024: 1-5- [c39]Davide Favero, Carlo De Santi, Arno Stockman, Arianna Nardo, Piet Vanmeerbeek, Marnix Tack, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
$\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout. IRPS 2024: 1-4 - [c38]Alberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements. IRPS 2024: 1-5 - [c37]Marco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, Stacia Keller, Umesh K. Mishra:
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. IRPS 2024: 5 - [c36]A. Cavaliere, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs. IRPS 2024: 17 - 2023
- [c35]Davide Favero, A. Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. IRPS 2023: 1-6 - [c34]Manuel Fregolent, Alberto Marcuzzi, Carlo De Santi, Eldad Bahat-Treidel, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques. IRPS 2023: 1-5 - [c33]Zhan Gao, Francesca Chiocchetta, Fabiana Rampazzo, Carlo De Santi, Mirko Fornasier, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni:
Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests. IRPS 2023: 1-5 - 2022
- [c32]Fabrizio Masin, Carlo De Santi, Arno Stockman, J. Lettens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Matteo Meneghini:
Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature. IRPS 2022: 5 - [c31]Nicola Modolo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Modeling Hot-Electron Trapping in GaN-based HEMTs. IRPS 2022: 10 - [c30]Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. IRPS 2022: 11 - [c29]Davide Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. IRPS 2022: 20-1 - [c28]Zhan Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz:
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. IRPS 2022: 51-1 - 2021
- [j82]Nicola Trivellin, Matteo Buffolo, Carlo De Santi, Matteo Meneghini, Michele Forzan, Fabrizio Dughiero, Enrico Zanoni, Gaudenzio Meneghesso:
Full Optical Contactless Thermometry Based on LED Photoluminescence. IEEE Trans. Instrum. Meas. 70: 1-8 (2021) - [c27]Matteo Meneghini, Nicola Modolo, Arianna Nardo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Christian Koller, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni:
Charge Trapping in GaN Power Transistors: Challenges and Perspectives. BCICTS 2021: 1-4 - [c26]Nicola Trivellin, Matteo Buffolo, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini:
Current crowding as a major cause for InGaN LED degradation at extreme high current density. IECON 2021: 1-6 - [c25]Francesca Chiocchetta, Claudia Calascione, Carlo De Santi, Chandan Sharma, Fabiana Rampazzo, Xun Zheng, Brian Romanczyk, Matthew Guidry, Haoran Li, Stacia Keller, Umesh K. Mishra, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni:
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. IRPS 2021: 1-2 - [c24]Elena Fabris, Matteo Borga, Niels Posthuma, Ming Zhao, Brice De Jaeger, Shuzhen You, Stefaan Decoutere, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni:
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications. IRPS 2021: 1-8 - [c23]Nicola Modolo, Andrea Minetto, Carlo De Santi, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level. IRPS 2021: 1-5 - 2020
- [c22]Fabrizio Masin, Matteo Meneghini, Eleonora Canato, Alessandro Barbato, Carlo De Santi, Arno Stockman, Abhishek Banerjee, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. IRPS 2020: 1-4 - [c21]Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere:
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. IRPS 2020: 1-5 - [c20]Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi:
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs. IRPS 2020: 1-5 - [c19]Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Fabiana Rampazzo, Daniele Marcon, Veronica Gao Zhan, Francesca Chiocchetta, Andreas Graff, Frank Altmann, Michél Simon-Najasek, David Poppitz:
Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling. IRPS 2020: 1-10
2010 – 2019
- 2019
- [c18]Eleonora Canato, Fabrizio Masin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Arno Stockman, Abhishek Banerjee, Peter Moens:
µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. IRPS 2019: 1-6 - [c17]Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Matteo Borga, Gaudenzio Meneghesso, Enrico Zanoni, Y. Kinoshita, Kenichiro Tanaka, H. Ishida, Tetsuzo Ueda:
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis. IRPS 2019: 1-6 - [c16]Maria Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury:
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). IRPS 2019: 1-5 - [c15]Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka:
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS 2019: 1-10 - [c14]Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors. IRPS 2019: 1-6 - 2018
- [j81]Gaudenzio Meneghesso, Matteo Meneghini, Carlo De Santi, Maria Ruzzarin, Enrico Zanoni:
Positive and negative threshold voltage instabilities in GaN-based transistors. Microelectron. Reliab. 80: 257-265 (2018) - [j80]Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, Marc Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, Daniel Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni:
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. Microelectron. Reliab. 88-90: 397-401 (2018) - [j79]Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Zongyang Hu, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Xiang Gao, Gaudenzio Meneghesso, Enrico Zanoni:
Degradation of GaN-on-GaN vertical diodes submitted to high current stress. Microelectron. Reliab. 88-90: 568-571 (2018) - [j78]Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. Microelectron. Reliab. 88-90: 572-576 (2018) - [j77]Matteo Borga, Matteo Meneghini, Steve Stoffels, Marleen Van Hove, M. Zhao, X. Li, Stefaan Decoutere, Enrico Zanoni, Gaudenzio Meneghesso:
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. Microelectron. Reliab. 88-90: 584-588 (2018) - [j76]Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni:
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments. Microelectron. Reliab. 88-90: 620-626 (2018) - [j75]Matteo Buffolo, M. Pietrobon, Carlo De Santi, F. Samparisi, Michael L. Davenport, John E. Bowers, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits. Microelectron. Reliab. 88-90: 855-858 (2018) - [j74]Desiree Monti, Matteo Meneghini, Carlo De Santi, Agata Bojarska, Piotr Perlin, Gaudenzio Meneghesso, Enrico Zanoni:
Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes. Microelectron. Reliab. 88-90: 864-867 (2018) - [j73]Nicola Trivellin, Desiree Monti, Carlo De Santi, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Current induced degradation study on state of the art DUV LEDs. Microelectron. Reliab. 88-90: 868-872 (2018) - [j72]N. Renso, Matteo Buffolo, Carlo De Santi, Matteo Ronzani, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress. Microelectron. Reliab. 88-90: 887-890 (2018) - [j71]Nicola Trivellin, Diego Barbisan, Denis Badocco, Paolo Pastore, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Giuseppe Belgioioso, Angelo Cenedese:
Study and Development of a Fluorescence Based Sensor System for Monitoring Oxygen in Wine Production: The WOW Project. Sensors 18(4): 1130 (2018) - [c13]Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Min Sun, Tomás Palacios:
Degradation of vertical GaN FETs under gate and drain stress. IRPS 2018: 4 - [c12]Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Benoit Bakeroot:
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. IRPS 2018: 4 - 2017
- [j70]Alaleh Tajalli, Matteo Meneghini, Isabella Rossetto, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso:
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. Microelectron. Reliab. 76-77: 282-286 (2017) - [j69]Isabella Rossetto, Matteo Meneghini, Eleonora Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni:
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. Microelectron. Reliab. 76-77: 298-303 (2017) - [j68]N. Renso, Matteo Meneghini, Matteo Buffolo, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni:
Understanding the degradation processes of GaN based LEDs submitted to extremely high current density. Microelectron. Reliab. 76-77: 556-560 (2017) - [j67]Carlo De Santi, Matteo Meneghini, Alessandro Caria, E. Dogmus, M. Zegaoui, F. Medjdoub, Enrico Zanoni, Gaudenzio Meneghesso:
Degradation of InGaN-based MQW solar cells under 405 nm laser excitation. Microelectron. Reliab. 76-77: 575-578 (2017) - [j66]Desiree Monti, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Agata Bojarska, Piotr Perlin:
Long-term degradation of InGaN-based laser diodes: Role of defects. Microelectron. Reliab. 76-77: 584-587 (2017) - 2016
- [j65]Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni:
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. Microelectron. Reliab. 58: 151-157 (2016) - [j64]Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale:
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectron. Reliab. 58: 177-184 (2016) - [j63]Agostino Benvegnù, Sylvain Laurent, Matteo Meneghini, Raymond Quéré, Jean-Luc Roux, Enrico Zanoni, Denis Barataud:
Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs. Microelectron. Reliab. 64: 535-540 (2016) - [j62]Isabella Rossetto, Matteo Meneghini, Vanessa Rizzato, Maria Ruzzarin, Andrea Favaron, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni:
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. Microelectron. Reliab. 64: 547-551 (2016) - [j61]Matteo Buffolo, Matteo Meneghini, Carlo De Santi, Henry Felber, N. Renso, Gaudenzio Meneghesso, Enrico Zanoni:
Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs. Microelectron. Reliab. 64: 610-613 (2016) - [j60]Marco La Grassa, Matteo Meneghini, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso:
Degradation of InGaN-based LEDs related to charge diffusion and build-up. Microelectron. Reliab. 64: 614-616 (2016) - [j59]Carlo De Santi, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni:
Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes. Microelectron. Reliab. 64: 623-626 (2016) - 2015
- [j58]Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni:
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. Microelectron. Reliab. 55(9-10): 1662-1666 (2015) - [j57]Isabella Rossetto, Matteo Meneghini, Davide Bisi, Alessandro Barbato, Marleen Van Hove, Denis Marcon, Tian-Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni:
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs. Microelectron. Reliab. 55(9-10): 1692-1696 (2015) - [j56]Matteo Buffolo, Carlo De Santi, Matteo Meneghini, D. Rigon, Gaudenzio Meneghesso, Enrico Zanoni:
Long-term degradation mechanisms of mid-power LEDs for lighting applications. Microelectron. Reliab. 55(9-10): 1754-1758 (2015) - [j55]Carlo De Santi, Matteo Dal Lago, Matteo Buffolo, Desiree Monti, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni:
Failure causes and mechanisms of retrofit LED lamps. Microelectron. Reliab. 55(9-10): 1765-1769 (2015) - [j54]Marco La Grassa, Matteo Meneghini, Carlo De Santi, Marco Mandurrino, Michele Goano, Francesco Bertazzi, Roland Zeisel, Bastian Galler, Gaudenzio Meneghesso, Enrico Zanoni:
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects. Microelectron. Reliab. 55(9-10): 1775-1778 (2015) - [c11]Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Piet Vanmeerbeek, Peter Moens:
Trapping induced parasitic effects in GaN-HEMT for power switching applications. ICICDT 2015: 1-4 - [c10]Matteo Meneghini, Riccardo Silvestri, Stefano Dalcanale, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, Piet Vanmeerbeek, Abhishek Banerjee, Peter Moens:
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors. IRPS 2015: 2 - [c9]Marco Barbato, Matteo Meneghini, Andrea Cester, Alessandro Barbato, Enrico Zanoni, Gaudenzio Meneghesso, Giovanna Mura, D. Tonini, A. Voltan, Giorgio Cellere:
Stress-induced instabilities of shunt paths in high efficiency MWT solar cells. IRPS 2015: 3 - [c8]Carlo De Santi, Matteo Dal Lago, Matteo Buffolo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni:
Analysis of the mechanisms limiting the reliability of retrofit LED lamps. RTSI 2015: 1-4 - [c7]Nicola Trivellin, Matteo Meneghini, Marco Ferretti, Diego Barbisan, Matteo Dal Lago, Gaudenzio Meneghesso, Enrico Zanoni:
Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting. RTSI 2015: 154-156 - 2014
- [j53]Alessandro Chini, Gaudenzio Meneghesso, Alessio Pantellini, Claudio Lanzieri, Enrico Zanoni:
Reliability Investigation of GaN HEMTs for MMICs Applications. Micromachines 5(3): 570-582 (2014) - [j52]Matteo Meneghini, Simone Vaccari, Matteo Dal Lago, Stefano Marconi, Marco Barbato, Nicola Trivellin, Alessio Griffoni, Alberto Alfier, Giovanni Verzellesi, Gaudenzio Meneghesso, Enrico Zanoni:
ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements. Microelectron. Reliab. 54(6-7): 1143-1149 (2014) - [j51]Matteo Dal Lago, Matteo Meneghini, Carlo De Santi, Marco Barbato, Nicola Trivellin, Gaudenzio Meneghesso, Enrico Zanoni:
ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms. Microelectron. Reliab. 54(9-10): 2138-2141 (2014) - [j50]Carlo De Santi, Matteo Meneghini, Michael Marioli, Matteo Buffolo, Nicola Trivellin, T. Weig, K. Holc, K. Köhler, J. Wagner, U. T. Schwarz, Gaudenzio Meneghesso, Enrico Zanoni:
Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage. Microelectron. Reliab. 54(9-10): 2147-2150 (2014) - [j49]Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni:
Proton induced trapping effect on space compatible GaN HEMTs. Microelectron. Reliab. 54(9-10): 2213-2216 (2014) - [j48]Alessandro Chini, Fabio Soci, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni:
Traps localization and analysis in GaN HEMTs. Microelectron. Reliab. 54(9-10): 2222-2226 (2014) - [j47]Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni:
Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. Microelectron. Reliab. 54(9-10): 2237-2241 (2014) - [j46]Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini, Marco Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni:
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. Microelectron. Reliab. 54(9-10): 2248-2252 (2014) - [c6]Farid Medjdoub, Etienne Okada, Bertrand Grimbert, Damien Ducatteau, Riccardo Silvestri, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso:
High performance high reliability AlN/GaN DHFET. ESSDERC 2014: 146-149 - [c5]Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso:
Breakdown investigation in GaN-based MIS-HEMT devices. ESSDERC 2014: 377-380 - [c4]Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage:
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences. ESSDERC 2014: 381-384 - [c3]Davide Bisi, Antonio Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni:
Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs. ESSDERC 2014: 389-392 - 2013
- [j45]Clément Fleury, Rimma Zhytnytska, Sergey Bychikhin, Mattia Capriotti, Oliver Hilt, Domenica Visalli, Gaudenzio Meneghesso, Enrico Zanoni, Joachim Würfl, Joff Derluyn, Gottfried Strasser, Dionyz Pogany:
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 53(9-11): 1444-1449 (2013) - [j44]Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni:
Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics. Microelectron. Reliab. 53(9-11): 1456-1460 (2013) - [j43]Alessandro Chini, Fabio Soci, Fausto Fantini, A. Nanni, A. Pantellini, Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni:
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs. Microelectron. Reliab. 53(9-11): 1461-1465 (2013) - [j42]Isabella Rossetto, Fabiana Rampazzo, Riccardo Silvestri, Alberto Zanandrea, Christian Dua, Sylvain L. Delage, Mourad Oualli, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso:
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate. Microelectron. Reliab. 53(9-11): 1476-1480 (2013) - [j41]Simone Vaccari, Matteo Meneghini, Alessio Griffoni, Diego Barbisan, Marco Barbato, S. Carraro, Marco La Grassa, Gaudenzio Meneghesso, Enrico Zanoni:
ESD characterization of multi-chip RGB LEDs. Microelectron. Reliab. 53(9-11): 1510-1513 (2013) - [j40]Matteo Dal Lago, Matteo Meneghini, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni:
"Hot-plugging" of LED modules: Electrical characterization and device degradation. Microelectron. Reliab. 53(9-11): 1524-1528 (2013) - [j39]Carlo De Santi, Matteo Meneghini, S. Carraro, Simone Vaccari, Nicola Trivellin, Stefania Marconi, Michael Marioli, Gaudenzio Meneghesso, Enrico Zanoni:
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes. Microelectron. Reliab. 53(9-11): 1534-1537 (2013) - [j38]Alessandro Compagnin, Matteo Meneghini, Marco Barbato, Valentina Giliberto, Andrea Cester, Massimo Vanzi, Giovanna Mura, Enrico Zanoni, Gaudenzio Meneghesso:
Thermal and electrical investigation of the reverse bias degradation of silicon solar cells. Microelectron. Reliab. 53(9-11): 1809-1813 (2013) - [c2]Davide Bisi, Matteo Meneghini, Antonio Stocco, Giulia Cibin, Alessio Pantellini, Antonio Nanni, Claudio Lanzieri, Enrico Zanoni, Gaudenzio Meneghesso:
Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. ESSDERC 2013: 61-64 - 2012
- [j37]Matteo Meneghini, Matteo Dal Lago, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni:
Chip and package-related degradation of high power white LEDs. Microelectron. Reliab. 52(5): 804-812 (2012) - [j36]Matteo Meneghini, Matteo Dal Lago, L. Rodighiero, Nicola Trivellin, Enrico Zanoni, Gaudenzio Meneghesso:
Reliability issues in GaN-based light-emitting diodes: Effect of dc and PWM stress. Microelectron. Reliab. 52(8): 1621-1626 (2012) - [j35]Isabella Rossetto, Matteo Meneghini, Tiziana Tomasi, Dai Yufeng, Gaudenzio Meneghesso, Enrico Zanoni:
Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits. Microelectron. Reliab. 52(9-10): 2093-2097 (2012) - [j34]Alessandro Chini, Fabio Soci, Fausto Fantini, Antonio Nanni, Alessio Pantellini, Claudio Lanzieri, Davide Bisi, Gaudenzio Meneghesso, Enrico Zanoni:
Field plate related reliability improvements in GaN-on-Si HEMTs. Microelectron. Reliab. 52(9-10): 2153-2158 (2012) - [j33]Matteo Dal Lago, Matteo Meneghini, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni:
Phosphors for LED-based light sources: Thermal properties and reliability issues. Microelectron. Reliab. 52(9-10): 2164-2167 (2012) - [j32]Paul Marko, Matteo Meneghini, Sergey Bychikhin, Denis Marcon, Gaudenzio Meneghesso, Enrico Zanoni, Dionyz Pogany:
IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. 52(9-10): 2194-2199 (2012) - [j31]Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso:
Single- and double-heterostructure GaN-HEMTs devices for power switching applications. Microelectron. Reliab. 52(9-10): 2426-2430 (2012) - 2011
- [j30]Augusto Tazzoli, Isabella Rossetto, Enrico Zanoni, Dai Yufeng, Tiziana Tomasi, Gaudenzio Meneghesso:
ESD sensitivity of a GaAs MMIC microwave power amplifier. Microelectron. Reliab. 51(9-11): 1602-1607 (2011) - [j29]Matteo Dal Lago, Matteo Meneghini, Nicola Trivellin, Gaudenzio Meneghesso, Enrico Zanoni:
Degradation mechanisms of high-power white LEDs activated by current and temperature. Microelectron. Reliab. 51(9-11): 1742-1746 (2011) - [j28]Nicola Trivellin, Matteo Meneghini, Carlo De Santi, Simone Vaccari, Gaudenzio Meneghesso, Enrico Zanoni, Kenji Orita, S. Takigawa, Tsuyoshi Tanaka, Daisuke Ueda:
Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency. Microelectron. Reliab. 51(9-11): 1747-1751 (2011) - 2010
- [j27]Matteo Meneghini, Nicola Trivellin, Kenji Orita, Masaaki Yuri, Tsuyoshi Tanaka, Daisuke Ueda, Enrico Zanoni