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"Design and analysis of a 32 nm PVT tolerant CMOS SRAM cell for low leakage ..."

Sheng Lin, Yong-Bin Kim, Fabrizio Lombardi (2010)

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DOI: 10.1016/J.VLSI.2010.01.003

access: closed

type: Journal Article

metadata version: 2022-06-23

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Sheng Lin, Yong-Bin Kim, Fabrizio Lombardi:
Design and analysis of a 32 nm PVT tolerant CMOS SRAM cell for low leakage and high stability. Integr. 43(2): 176-187 (2010)

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