"Channel width dependence of mechanical stress effects induced by shallow ..."

Seonhaeng Lee et al. (2012)

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DOI: 10.1016/J.MICROREL.2012.06.067

access: closed

type: Journal Article

metadata version: 2024-09-16

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Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs. Microelectron. Reliab. 52(9-10): 1949-1952 (2012)

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