"Study of proton radiation effect to row hammer fault in DDR4 SDRAMs."

Chul Seung Lim et al. (2018)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2017.11.018

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/LimPBYPBWW18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/LimPBYPBWW18
Chul Seung Lim, Kyungbae Park, GeunYong Bak, Donghyuk Yun, Myungsang Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong:
Study of proton radiation effect to row hammer fault in DDR4 SDRAMs. Microelectron. Reliab. 80: 85-90 (2018)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.