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ORCIDMicroelectronics Reliability, Volume 80
Volume 80, January 2018
- Pi-Ying Cheng, Po-Ying Lai
, Jiun-Ming Ye, Tsung-Chia Chen, Cheng-Li Hsieh:
High temperature storage reliability of palladium coated copper wire in different EFO current settings. 1-6 - Yu Tian, Jing Han, Limin Ma, Fu Guo:
The dominant effect of c-axis orientation in tin on the electromigration behaviors in tricrystal Sn-3.0Ag-0.5Cu solder joints. 7-13 - Tz-Cheng Chiu, En-Yu Yeh:
Warpage simulation for the reconstituted wafer used in fan-out wafer level packaging. 14-23 - Xianqiang Liu, Xiaodi Xu, Chenjie Gu, Renyuan Gu, Weiwei Wang, Wenjun Liu, Tianli Duan:
Investigating the impact of the defect dynamic characteristics on the PBTI in the high-κ gate device. 24-28 - Jian Gu, Jian Lin, Yongping Lei, Hanguang Fu:
Experimental analysis of Sn-3.0Ag-0.5Cu solder joint board-level drop/vibration impact failure models after thermal/isothermal cycling. 29-36 - Xuerong Ye, Cen Chen, Yixing Wang, L. Wang, Guofu Zhai:
VDMOSFET HEF degradation modelling considering turn-around phenomenon. 37-41 - Xiuyang Shan, Yun Chen:
Experimental and modeling study on viscosity of encapsulant for electronic packaging. 42-46 - Gang Chen, Xiaochen Zhao:
Constitutive modelling on the whole-life uniaxial ratcheting behavior of sintered nano-scale silver paste at room and high temperatures. 47-54 - Anil Kunwar, Shengyan Shang, Peter Råback, Yunpeng Wang, Julien Givernaud, Jun Chen, Haitao Ma, Xueguan Song, Ning Zhao:
Heat and mass transfer effects of laser soldering on growth behavior of interfacial intermetallic compounds in Sn/Cu and Sn-3.5Ag0.5/Cu joints. 55-67 - Thomas Aichinger, Gerald Rescher, Gregor Pobegen:
Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. 68-78 - Limeng Yin, Dong Li, Zongxiang Yao, Gang Wang, Adrian Blackburn:
Microstructures and properties of Bi10Ag high temperature solder doped with Cu element. 79-84 - Chul Seung Lim, Kyungbae Park, GeunYong Bak, Donghyuk Yun, Myungsang Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong:
Study of proton radiation effect to row hammer fault in DDR4 SDRAMs. 85-90 - Thomas Polzer, Florian Huemer, Andreas Steininger:
Refined metastability characterization using a time-to-digital converter. 91-99 - Xavier Garros, Antoine Laurent, Alexandre Subirats, X. Federspiel, E. Vincent, Gilles Reimbold:
Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors. 100-108 - Jianfu Zhang, Zhigang Ji, Wei Dong Zhang:
As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction. 109-123 - Matthias Kampmann, Sybille Hellebrand:
Design for Small Delay Test - A Simulation Study. 124-133 - Subhas Chandra Das, G. Narayanan, Arvind Tiwari:
Experimental study on the influence of junction temperature on the relationship between IGBT switching energy loss and device current. 134-143 - Qiang Guo, Siyu Sun, Zhihao Zhang, Hongtao Chen, Mingyu Li:
Microstructure evolution and mechanical strength evaluation in Ag/Sn/Cu TLP bonding interconnection during aging test. 144-148 - Devyani Patra, Ahmed Kamal Reza, Mohammad Khaled Hassan, Mehdi Katoozi, Ethan H. Cannon, Kaushik Roy, Yu Cao:
Adaptive accelerated aging for 28 nm HKMG technology. 149-154 - Michal Sovcik, Martin Kovác, Daniel Arbet, Viera Stopjaková, Miroslav Potocný:
Ultra-low-voltage boosted driver for self-powered systems. 155-163 - Mitiko Miura-Mattausch, Hidenori Miyamoto, Hideyuki Kikuchihara, Tapas K. Maiti, Nezam Rohbani, Dondee Navarro, Hans Jürgen Mattausch:
Compact modeling of dynamic trap density evolution for predicting circuit-performance aging. 164-175 - Felix Mühlbauer, Lukas Schröder, Mario Schölzel:
Handling of transient and permanent faults in dynamically scheduled super-scalar processors. 176-183 - Sascha Heinssen, Theodor Hillebrand, Maike Taddiken, Konstantin Tscherkaschin, Steffen Paul, Dagmar Peters-Drolshagen:
Design for reliability of generic sensor interface circuits. 184-197 - Siyu Sun, Qiang Guo, Hongtao Chen, Mingyu Li, Chunqing Wang:
Solderless bonding with nanoporous copper as interlayer for high-temperature applications. 198-204 - V. I. Smirnov, V. A. Sergeev, Andrey Anatolievich Gavrikov, A. M. Shorin:
Modulation method for measuring thermal impedance components of semiconductor devices. 205-212 - Mei-Ling Wu, Jia-Shen Lan:
Reliability and failure analysis of SAC 105 and SAC 1205N lead-free solder alloys during drop test events. 213-222 - Mirko Bernardoni, Nicola Delmonte, Diego Chiozzi, Paolo Cova:
Non-linear thermal simulation at system level: Compact modelling and experimental validation. 223-229 - Hamidreza Ghorbani, Vicent Sala Caselles, Alejandro Paredes Camacho, Jose Luis Romeral Martinez:
Embedding a feedforward controller into the IGBT gate driver for turn-on transient improvement. 230-240 - Marcello Traiola, Mario Barbareschi, Alberto Bosio:
Estimating dynamic power consumption for memristor-based CiM architecture. 241-248 - Ondrej Novák, Zdenek Plíva:
Test response compaction method with improved detection and diagnostic abilities. 249-256 - Gaudenzio Meneghesso, Matteo Meneghini, Carlo De Santi, Maria Ruzzarin, Enrico Zanoni:
Positive and negative threshold voltage instabilities in GaN-based transistors. 257-265 - Daniel M. Fleetwood:
Border traps and bias-temperature instabilities in MOS devices. 266-277 - Thiago Hanna Both, Gabriela Firpo Furtado, Gilson Inácio Wirth:
Modeling and simulation of the charge trapping component of BTI and RTS. 278-283 - Dayong Qiao, Rong Zhao, Yalong Zhang, Changfeng Xia, Xiumin Song, Qiaoming You:
An exploration for the degradation behavior of 2-D electrostatic microscanners by accelerated lifetime test. 284-293 - Yukai Chen, Enrico Macii, Massimo Poncino:
Empirical derivation of upper and lower bounds of NBTI aging for embedded cores. 294-305 - Eun-Ki Hong, Won-Ju Cho:
Effect of microwave annealing on SOI MOSFETs: Post-metal annealing with low thermal budget. 306-311 - Zhifeng Lei, H. X. Guo, M. H. Tang, C. Zeng, Zhangang Zhang, H. Chen, Y. F. En, Y. Huang, Yiqiang Chen, Chao Peng:
Degradation mechanisms of AlGaN/GaN HEMTs under 800 MeV Bi ions irradiation. 312-316 - John W. Evans, Koustav Sinha:
Applications of fracture mechanics to quantitative accelerated life testing of plastic encapsulated microelectronics. 317-327
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