• case-insensitive prefix search: default
  e.g., sig matches "SIGIR" as well as "signal"
• exact word search: append dollar sign ($) to word
  e.g., graph$ matches "graph", but not "graphics"
• boolean and: separate words by space
  e.g., codd model
• boolean or: connect words by pipe symbol (|)
  e.g., graph|network

Update May 7, 2017: Please note that we had to disable the phrase search operator (.) and the boolean not operator (-) due to technical problems. For the time being, phrase search queries will yield regular prefix search result, and search terms preceded by a minus will be interpreted as regular (positive) search terms.

found 84 matches

• 2022
• 
  Md Tashfiq Bin Kashem, Jake Scoggin, Helena Silva, Ali Gokirmak:
  Finite Element Analysis of GeTe / Ge2Sb2Te5 Interfacial Phase Change Memory Devices. NVMTS 2022: 1-5
• 
  Seung-Yeol Oh, Hojung Jang, Hyunsang Hwang:
  Effects of an interfacial dead layer on the ferroelectric HfZrOx films for low thermal budget. NVMTS 2022: 1-5
• 
  Koji Sakui, Masakazu Kakumu, Nozomu Harada:
  Dynamic Flash Memory with Fast Block Refresh. NVMTS 2022: 1-5
• 
  20th Non-Volatile Memory Technology Symposium, NVMTS 2022, Stanford, CA, USA, December 7-9, 2022. IEEE 2022, ISBN 979-8-3503-0109-0 [contents]
• 2019
• 
  Dieter Bimberg, Thomas Mikolajick, Xavier Wallart:
  Novel Quantum Dot Based Memories with Many Days of Storage Time : Last Steps towards the Holy Grail? NVMTS 2019: 1-4
• 
  Alessandro Fumarola, Yusuf Leblebici, Pritish Narayanan, Robert M. Shelby, L. L. Sanchez, Geoffrey W. Burr, Kibong Moon, J. Jang, Hyunsang Hwang, Severin Sidler:
  Non-filamentary non-volatile memory elements as synapses in neuromorphic systems. NVMTS 2019: 1-6
• 
  Alexandre Levisse, Marco Rios, William Andrew Simon, Pierre-Emmanuel Gaillardon, David Atienza:
  Functionality Enhanced Memories for Edge-AI Embedded Systems. NVMTS 2019: 1-4
• 
  Patrick D. Lomenzo, Stefan Slesazeck, Michael Hoffmann, Thomas Mikolajick, Uwe Schroeder, Benjamin Max:
  Ferroelectric Hf_1-xZr_xO₂ memories: device reliability and depolarization fields. NVMTS 2019: 1-8
• 
  Fei Mo, Yusaku Tagawa, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi:
  Scalability Study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method. NVMTS 2019: 1-5
• 
  Nikolaos Papandreou, Nikolas Ioannou, Thomas P. Parnell, Roman A. Pletka, Milos Stanisavljevic, Radu Stoica, Sasa Tomic, Haralampos Pozidis:
  Reliability of 3D NAND flash memory with a focus on read voltage calibration from a system aspect. NVMTS 2019: 1-4
• 
  Jérémy Postel-Pellerin, Hussein Bazzi, Hassen Aziza, Pierre Canet, Mathieu Moreau, Vincenzo Della Marca, Adnan Harb:
  True random number generation exploiting SET voltage variability in resistive RAM memory arrays. NVMTS 2019: 1-5
• 
  Konrad Seidel, Kati Biedermann, Jan Van Houdt, Tarek Ali, Raik Hoffmann, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Philipp Steinke, K. Zimmermann:
  Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications. NVMTS 2019: 1-4
• 
  Ryo Tamura, N. Watanabe, Hiroki Koike, Hideo Sato, Shoji Ikeda, Tetsuo Endoh, Soshi Sato:
  A novel memory test system with an electromagnet for STT-MRAM testing. NVMTS 2019: 1-4
• 
  Panni Wang, Zheng Wang, Nujhat Tasneem, Jar Hur, Asif Islam Khan, Shimeng Yu:
  Investigating Dynamic Minor Loop of Ferroelectric Capacitor. NVMTS 2019: 1-4
• 
  19th Non-Volatile Memory Technology Symposium, NVMTS 2019, Durham, NC, USA, October 28-30, 2019. IEEE 2019, ISBN 978-1-7281-4431-3 [contents]
• 2018
• 
  Rana Alhalabi, Etienne Nowak, Ioan Lucian Prejbeanu, Gregory di Pendina:
  High density SOT-MRAM memory array based on a single transistor. NVMTS 2018: 1-3
• 
  Irem Boybat, S. R. Nandakumar, Manuel Le Gallo, Bipin Rajendran, Yusuf Leblebici, Abu Sebastian, Evangelos Eleftheriou:
  Impact of conductance drift on multi-PCM synaptic architectures. NVMTS 2018: 1-4
• 
  Solomon Amsalu Chekol, Jongmyung Yoo, Hyunsang Hwang:
  Thermally Stable Te-based Binary OTS Device for Selector Application. NVMTS 2018: 1-4
• 
  Yi-Shao Chen, Zongwei Wang, Zhihong Zhang, Li Wang, Yichen Fang, Jen-Chung Lou, Kaihui Liu, Jintong Xu, Yimao Cai, Ru Huang:
  Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer. NVMTS 2018: 1-3
• 
  Shouhei Fukuyama, Shinpei Matsuda, Ryutaro Yasuhara, Ken Takeuchi:
  Improvement of Endurance and Data-retention in 40nm TaOX-based ReRAM by Finalize Verify. NVMTS 2018: 1-4
• 
  Carsten Funck, C. Baumer, Regina Dittmann, Manfred Martin, Rainer Waser, Stephan Menzel:
  Atomistic Investigation of the Schottky Contact Conductance Limits at SrTiO3 based Resistive Switching Devices. NVMTS 2018: 1-4
• 
  Andreas Kindsmüller, Alexander Schönhals, Stephan Menzel, Regina Dittmann, Rainer Waser, Dirk J. Wouters:
  The influence of interfacial (sub)oxide layers on the properties of pristine resistive switching devices. NVMTS 2018: 1-4
• 
  Reika Kinoshita, Chihiro Matsui, Shinpei Matsuda, Yutaka Adachi, Ken Takeuchi:
  Maximizing Peformance/cost Figure of Merit of Storage-type SCM based SSD by Adding Small Capacity of Memory-type SCM. NVMTS 2018: 1-6
• 
  Sandip Lashkare, A. Bhat, Pankaj Kumbhare, Udayan Ganguly:
  Transient Joule Heating in PrMnO3 RRAM enables ReLU type Neuron. NVMTS 2018: 1-4
• 
  Zong-You Luo, Ya-Jui Tsou, Yi-Cheng Dong, Ching Lu, Chee Wee Liu:
  Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Utilizing Voltage-Controlled Magnetic Anisotropy Pulse Width Optimization. NVMTS 2018: 1-5
• 
  Atsuya Suzuki, Chihiro Matsui, Ken Takeuchi:
  Periodic Data Eviction Algorithm of SCM/NAND Flash Hybrid SSD with SCM Retention Time Constraint Capabilities at Extremely High Temperature. NVMTS 2018: 1-5
• 
  Ryo Tamura, I. Mori, N. Watanabe, Hiroki Koike, Tetsuo Endoh:
  Accurate error bit mode analysis of STT-MRAM chip with a novel current measurement module implemented to gigabit class memory test system. NVMTS 2018: 1-5
• 
  Srinath Venkatesan, Marc Aoulaiche:
  Overview of 3D NAND Technologies and Outlook Invited Paper. NVMTS 2018: 1-5
• 
  Chikako Yoshida, Tomohiro Tanaka, Tadashi Ataka, Astushi Furuya:
  Micromagnetic Study of Probabilistic Switching Behavior in Sub 20 nm-CoFeB/MgO Magnetic Tunnel Junction. NVMTS 2018: 1-5
• 
  Zhizhen Yu, Yichen Fang, Zongwei Wang, Yimao Cai, Ru Huang, Jintong Xu:
  Margin Dependence on Array Size for Asymmetric Resistive Memory Cell. NVMTS 2018: 1-3

skipping 54 more matches