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ORCIDVLSI Design, Volume 13
Volume 13, Numbers 1-4, 2001
- John Barker:
Guest Editorial. 1-2 - John R. Barker, Asen Asenov:
IWCE-7 Committees. 3 - Kausar Banoo, Jung-Hoon Rhew, Mark S. Lundstrom, Chi-Wang Shu
, Joseph W. Jerome:
Simulating Quasi-ballistic Transport in Si Nanotransistors. 5-13 - Asen Asenov, Gabriela Slavcheva, Savas Kaya, R. Balasubramaniam:
Quantum Corrections to the 'Atomistic' MOSFET Simulations. 15-21 - Paolo Lugli, Fabio Compagnone, Aldo Di Carlo, Andrea Reale:
Simulation of Optoelectronic Devices. 23-36 - Evjeni Starikov, Pavel Shiktorov, Viktor Gruzinskis, Luca Reggiani, Luca Varani, Jean Claude Vaissière, Jian H. Zhao:
Monte Carlo Calculations of Amplification Spectrum for GaN THz Transit-time Resonance Maser. 37-43 - N. Mori, C. Hamaguchi, Laurence Eaves, P. C. Main:
Numerical Studies of Miniband Conduction in Quasi-One-Dimensional Superlattices. 45-50 - Asim Kepkep, Umberto Ravaioli, Brian Winstead:
Cluster-based Parallel 3-D Monte Carlo Device Simulation. 51-56 - Jürgen Jakumeit, Torsten Mietzner, Umberto Ravaioli:
Efficient Silicon Device Simulation with the Local Iterative Monte Carlo Method. 57-61 - Enrico Ghillino, Carlo Garetto, Michele Goano, Giovanni Ghione, Enrico Bellotti, Kevin F. Brennan:
Simplex Algorithm for Band Structure Calculation of Noncubic Symmetry Semiconductors: Application to III-nitride Binaries and Alloys. 63-68 - Matsuto Ogawa, Ryuichiro Tominaga, Tanroku Miyoshi:
Tight Binding Simulation of Quantum Transport in Interband Tunneling Devices. 69-74 - Warren J. Gross, Dragica Vasileska, David K. Ferry:
Ultra-small MOSFETs: The Importance of the Full Coulomb Interaction on Device Characteristics. 75-78 - Min Shen, Ming-C. Cheng, Juin J. Liou:
A Generalized Finite Element Method for Hydrodynamic Modeling of Short-channel Devices. 79-84 - Pavel Shiktorov, Evjeni Starikov, Viktor Gruzinskis, Tomás González, Javier Mateos, Daniel Pardo, Luca Reggiani, Luca Varani, Jean Claude Vaissière:
Langevin Forces and Generalized Transfer Fields for Noise Modelling in Deep Submicron Devices. 85-90 - Francesco Chirico, Aldo Di Carlo, Paolo Lugli:
Self-consistent Full-band Modeling of Quantum Semiconductor Nanostructures. 91-95 - Alberto Bertoni, Paolo Bordone, Rossella Brunetti, Carlo Jacoboni, Susanna Reggiani:
Numerical Simulation of Quantum Logic Gates Based on Quantum Wires. 97-102 - Thomas D. Linton Jr., Shaofeng Yu, Reaz Shaheed:
3D Modelling of Fluctuation Effects in Highly Scaled VLSI Devices. 103-109 - Amr Haggag, William McMahon, Karl Hess, Björn Fischer, Leonard F. Register:
Impact of Scaling on CMOS Chip Failure Rate, and Design Rules for Hot Carrier Reliability. 111-115 - Kevin F. Brennan, Enrico Bellotti, Maziar Farahmand, Hans-Erik Nilsson, P. Paul Ruden, Yumin Zhang:
Monte Carlo Modeling of Wurtzite and 4H Phase Semiconducting Materials. 117-124 - S. J. Wigger, Stephen M. Goodnick, Marco Saraniti:
Hybrid Particle-based Full-band Analysis of Ultra-small MOS. 125-129 - Ting-Wei Tang, Xinlin Wang, Haitao Gan, Mei-Kei Ieong:
An Analytic Expression of Thermal Diffusion Coefficient for the Hydrodynamic Simulation of Semiconductor Devices. 131-134 - Alexander A. Demkov, Xiaodong Zhang, Heather Loechelt:
Theoretical Investigation of Ultrathin Gate Dielectrics. 135-143 - Xavier Oriols, Jordi Suñé:
Study of Electronic Transport in Tunneling Devices Using an Incoherent Superposition of Time Dependent Wave Packets. 145-148 - M. Girlanda, Massimo Macucci:
Simulation of a Complete Chain of QCA Cells with Realistic Potentials. 149-153 - David K. Ferry:
Simulation at the Start of the New Millenium: Crossing the Quantum-Classical Threshold. 155-161 - Fabian M. Bufler, P. Douglas Yoder, Wolfgang Fichtner:
Strain-Dependence of Electron Transport in Bulk Si and Deep-Submicron MOSFETs. 163-167 - Jeremy R. Watling, Yan P. Zhao, Asen Asenov, John R. Barker:
Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si p-MOSFETs. 169-173 - Torsten Mietzner, Jürgen Jakumeit, Umberto Ravaioli:
Influence of Electron-Electron Interaction on Electron Distributions in Short Si-MOSFETs Analysed Using the Local Iterative Monte Carlo Technique. 175-178 - Karl Hess, Umberto Ravaioli, M. Das Gupta, N. Aluru, Yves der Straaten, Robert S. Eisenberg:
Simulation of Biological Ionic Channels by Technology Computer-Aided Design. 179-187 - Xiaohui Wang, Wolfgang Porod:
Analytic I-V Model for Single-Electron Transistors. 189-192 - H.-O. Müller, D. A. Williams, Hiroshi Mizuta:
Design Optimization of Coulomb Blockade Devices. 193-198 - John R. Barker, Jeremy R. Watling, R. C. W. Wilkins:
A Fast Algorithm for the Study of Wave-packet Scattering at Disordered Interfaces. 199-204 - P. Gaubert, Luca Varani, Jean Claude Vaissière, J. P. Nougier, Evjeni Starikov, Pavel Shiktorov, Viktor Gruzhinskis:
Scattered Packet Method for the Simulation of the Spatio-temporal Evolution of Local Perturbations. 205-209 - Paolo Bordone, Alberto Bertoni, Rossella Brunetti, Carlo Jacoboni:
Wigner Paths Method in Quantum Transport with Dissipation. 211-220 - Haim Grubin, R. C. Buggeln:
Wigner Function Methods in Modeling of Switching in Resonant Tunneling Devices. 221-227 - W. K. Leung, R. J. Needs, Ganesh Rajagopalan, Satoshi Itoh, Sigeo Ihara:
Quantum Monte Carlo Study of Silicon Self-interstitial Defects. 229-235 - John R. Barker:
A Simple Model for the Quantum Hydrodynamic Simulation of Electron Transport in Quantum Confined Structures in the Presence of Vortices. 237-244 - K. Horio, Y. Mitani, A. Wakabayashi, N. Kurosawa:
Simulation of Drastic Lag Phenomena in GaAs-Based FETs for Large Voltage Swing. 245-249 - J. Kang, X. He, Dragica Vasileska, Dieter K. Schroder:
Optimization of FIBMOS Through 2D Silvaco ATLAS and 2D Monte Carlo Particle-based Device Simulations. 251-256 - Magnus Willander, Yevgeny V. Mamontov, Jonathan Vincent:
The Deterministic Circuit Model for Noise Influence on the Averaged Transient Responses of Large-scale Nonlinear ICs Analyzed with Itô's Stochastic Differential Equations. 257-264 - Salvador Rodríguez, J. Banqueri, J. E. Carceller:
Evaluation of an Equivalent Hole Effective Mass for Si/SiGe Structures. 265-268 - Roman Durikovic:
Visualization of Large-scale Atomic Interactions During the Melting and Crystallization Process. 269-271 - Orazio Muscato, Vittorio Romano:
Simulation of Submicron Silicon Diodes with a Non-Parabolic Hydrodynamical Model Based on the Maximum Entropy Principle. 273-279 - C. Jungemann, Burkhard Neinhüs, Bernd Meinerzhagen:
Investigation of the Local Force Approximation in Numerical Device Simulation by Full-band Monte Carlo Simulation. 281-285 - Eric A. B. Cole, Christopher M. Snowden, Shahzad Hussain:
Hot Electron Modelling of HEMTs. 287-293 - D. Oriato, Alison B. Walker, W. N. Wang:
Simulation of Widebandgap Multi-Quantum Well Light Emitting Diodes. 295-299 - A. Harkar, Robert W. Kelsall, J. N. Ellis:
Monte Carlo Study of the Lateral Distribution of Gate Current Density Along the Channel of Submicron LDD MOSFET's. 301-304 - Alessandro Pecchia, B. Movaghar, Robert W. Kelsall, A. Bourlange, Stephen D. Evans, B. J. Hickey, N. Boden:
Electronic Transport in Self-organised Molecular Nanostructured Devices. 305-309 - Elena Gnani, Susanna Reggiani, Renato Colle, Massimo Rudan:
Calculation of Transport Parameters of SiO2 Polymorphs. 311-315 - K. G. Rajendran, Wim Schoenmaker:
Measurement and Simulation of Boron Diffusivity in Strained Si1 -xGex Epitaxial Layers. 317-321 - Michel Rousseau, J.-C. de Jaeger:
2D-Hydrodynamic Energy Model Including Avalanche Breakdown Phenomenon for Power Field Effect Transistors. 323-328 - Min Shen, Wai-Kay Yip, Ming-C. Cheng, Juin J. Liou:
An Upstream Flux Splitting Method for Hydrodynamic Modeling of Deep Submicron Devices. 329-334 - Hideaki Tsuchiya, Brian Winstead, Umberto Ravaioli:
Quantum Potential Approaches for Nano-scale Device Simulation. 335-340 - Alex Trellakis, Umberto Ravaioli:
Three-dimensional Spectral Solution of Schrödinger Equation. 341-347 - Marcello A. Anile, José A. Carrillo, Irene M. Gamba, Chi-Wang Shu:
Approximation of the BTE by a Relaxation-time Operator: Simulations for a 50 nm-channel Si Diode. 349-354 - Marcello A. Anile, S. F. Liotta, Giovanni Mascali, Salvatore Rinaudo:
Two Dimensional MESFET Simulation of Transients and Steady State with Kinetic Based Hydrodynamical Models. 355-361 - C. Pennetta, Luca Reggiani, G. Trefán, R. Cataldo, Giorgio De Nunzio:
A Percolative Approach to Reliability of Thin Film Interconnects and Ultra-thin Dielectrics. 363-367 - Tanroku Miyoshi, Tetsuo Miyamoto, Matsuto Ogawa:
Quantum Transport Modeling of Current Noise in Quantum Devices. 369-373 - Rossella Brunetti, Alberto Bertoni, Paolo Bordone, Carlo Jacoboni:
Dynamical Equation and Monte Carlo Simulation of the Two-time Wigner Function for Electron Quantum Transport. 375-380 - Massimo Trovato, Luca Reggiani:
Maximum Entropy Principle within A Total Energy Scheme for Hot-carrier Transport in Semiconductor Devices. 381-386 - F. Sacconi, Fabio Della Sala, Aldo Di Carlo, Paolo Lugli:
Microscopic Modeling of GaN-based Heterostructures. 387-391 - J. Widany, G. Daminelli, Aldo Di Carlo, Paolo Lugli:
Density-functional Based Tight-binding Calculations on Thiophene Polymorphism. 393-397 - S. Barraud, P. Dollfus, S. Galdin, Raúl Rengel, María J. Martín, J. E. Velázquez:
An lonised-impurity Scattering Model for 3D Monte Carlo Device Simulation with Discrete Impurity Distribution. 399-404 - Mihail Nedjalkov, Hans Kosina, Siegfried Selberherr, Ivan Tomov Dimov:
A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors. 405-411 - Peiji Zhao, H. L. Cui, Dwight L. Woolard, Fliex Buot:
Operation Principle of Resonant Tunneling THz Oscillator at Fixed Bias Voltages. 413-417 - M. Gattobigio, Massimo Macucci, Giuseppe Iannaccone:
Detection of Quantum Cellular Automaton Action in Silicon-on-insulator Cells. 419-424 - Ettore Amirante, Giuseppe Iannaccone, B. Pellegrini:
Three-dimensional Statistical Modeling of the Effects of the Random Distribution of Dopants in Deep Sub-micron nMOSFETs. 425-429 - Giuseppe Iannaccone, S. Gennai:
Program, Erase and Retention Times of Thin-oxide Flash-EEPROMs. 431-434 - Karol Kalna, Asen Asenov, K. Elgaid, Iain Thayne:
Scaling of pHEMTs to Decanano Dimensions. 435-439 - Jeremy R. Watling, John R. Barker, Asen Asenov:
Soft Sphere Model for Electron Correlation and Scattering in the Atomistic Modelling of Semiconductor Devices. 441-446 - D. A. Romanov, J. Eizenkop, V. V. Mitin:
Dynamics of Non-equilibrium Short-wave-length Phonons in Semiconductor Heterostructures. 447-451 - John R. Barker, Jeremy R. Watling:
Simulation of Enhanced Interface Trapping Due to Carrier Dynamics in Warped Valence Bands in SiGe Devices. 453-458 - M. Lorenzini, Luc Haspeslagh, Jan Van Houdt, Herman E. Maes:
Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles. 459-463
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