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ORCIDHervé Morel
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2020 – today
- 2024
[j17]Oriol Avino-Salvado
, Cyril Buttay, Ferran Bonet, Christophe Raynaud, Pascal Bevilacqua, José Rebollo, Hervé Morel, Xavier Perpiñà:
Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs. IEEE Trans. Ind. Electron. 71(5): 5285-5295 (2024)- 2023
- [j16]Tanguy Simon, Mattia Giaccagli, Jean-François Trégouët, Daniele Astolfi, Vincent Andrieu, Hervé Morel, Xuefang Lin-Shi:
Robust Regulation of a Power Flow Controller via Nonlinear Integral Action. IEEE Trans. Control. Syst. Technol. 31(4): 1636-1648 (2023) - [c6]Ralph Makhoul, Abdelhakim Bourennane, Luong-Viêt Phung, Frédéric Richardeau, Mihai Lazar, Nour Beydoun, Sergueï Kostcheev, Philippe Godignon, Dominique Planson, Hervé Morel, David Bourrier:
Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration. MIXDES 2023: 201-206 - 2022
- [j15]P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong-Viêt Phung, Thi Huong Ngo, Philippe De Mierry, Éric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson:
Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. Microelectron. J. 128: 105575 (2022) - 2021
- [c5]Tanguy Simon, Mattia Giaccagli, Jean-François Trégouët, Daniele Astolfi, Vincent Andrieu, Xuefang Lin-Shi, Hervé Morel:
Robust Output Set-Point Tracking for a Power Flow Controller via Forwarding Design. CDC 2021: 6385-6390
2010 – 2019
- 2019
- [c4]Thilini Wickramasinghe, Stephane Azzopardi, Bruno Allard, Cyril Buttay, Charles Joubert, Christian Martin, Jean-François Mogniotte, Hervé Morel, Pascal Bevilacqua, Thanh-Long Le:
A Study on Shunt Resistor-based Current Measurements for Fast Switching GaN Devices. IECON 2019: 1573-1578 - [c3]Besar Asllani, Alberto Castellazzi, Oriol Avino-Salvado, Asad Fayyaz, Hervé Morel, Dominique Planson:
VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate. IRPS 2019: 1-6 - 2018
- [j14]Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson:
VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectron. Reliab. 88-90: 604-609 (2018) - [j13]Oriol Avino-Salvado, Hervé Morel, Cyril Buttay, Denis Labrousse, Stéphane Lefebvre:
Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode. Microelectron. Reliab. 88-90: 636-640 (2018) - [j12]Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel:
Measurement and analysis of SiC-MOSFET threshold voltage shift. Microelectron. Reliab. 88-90: 656-660 (2018) - [c2]Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel:
Robustness study of 1700 V 45 mΩ SiC MOSFETs. ICIT 2018: 830-834 - 2017
- [j11]Wissam Sabbah, Pierre Bondue, Oriol Avino-Salvado, Cyril Buttay, Hélène Frémont, Alexandrine Guédon-Gracia, Hervé Morel:
High temperature ageing of microelectronics assemblies with SAC solder joints. Microelectron. Reliab. 76-77: 362-367 (2017) - [j10]Ilyas Dchar, Cyril Buttay, Hervé Morel:
SiC power devices packaging with a short-circuit failure mode capability. Microelectron. Reliab. 76-77: 400-404 (2017) - [j9]Wissam Sabbah, Faical Arabi, Oriol Avino-Salvado, Cyril Buttay, L. Théolier, Hervé Morel:
Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling. Microelectron. Reliab. 76-77: 444-449 (2017) - [j8]Hatem Garrab, Atef Jedidi, Hervé Morel, Kamel Besbes:
A Novel Approach to Accurately Determine the tq Parameter of Thyristors. IEEE Trans. Ind. Electron. 64(1): 206-216 (2017) - [c1]Mehrez Oueslati, Hatem Garrab, Atef Jedidi, Hervé Morel, Kamel Besbes:
On the extraction of the design parameters of power BJTs. ICCAD 2017: 320-327 - 2016
- [j7]Ilyas Dchar, Cyril Buttay, Hervé Morel:
Avalanche robustness of SiC Schottky diode. Microelectron. Reliab. 64: 494-501 (2016) - 2015
- [j6]Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickael Petit, Cyril Buttay, Hervé Morel:
Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs. Microelectron. Reliab. 55(9-10): 1708-1713 (2015) - [j5]Atef Jedidi, Hatem Garrab, Hervé Morel, Kamel Besbes:
A Novel Approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems. IEEE Trans. Ind. Electron. 62(4): 2174-2183 (2015) - 2011
- [j4]Kaiçar Ammous, Hervé Morel, Anis Ammous:
Inverse Models of Voltage and Current Probes. IEEE Trans. Instrum. Meas. 60(12): 3898-3906 (2011) - 2010
- [j3]Tarek Ben Salah, Sofiane Khachroumi, Hervé Morel:
Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications. Sensors 10(1): 388-399 (2010) - [j2]Kaiçar Ammous, Hervé Morel, Anis Ammous:
Analysis of Power Switching Losses Accounting Probe Modeling. IEEE Trans. Instrum. Meas. 59(12): 3218-3226 (2010)
2000 – 2009
- 2001
- [j1]Nouri Massmoudi, Djébé M'bairi, Bruno Allard, Hervé Morel:
On the validity of the standard SPICE model of the diode for simulation in power electronics. IEEE Trans. Ind. Electron. 48(4): 864-867 (2001)
Coauthor Index
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