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2020 – today
- 2024
[c16]Sven Beyer, Dominik Kleimaier, Stefan Dünkel, Halid Mulaosmanovic, Steven Soss, Johannes Müller, Zhouhang Jiang, Kai Ni, Thomas Mikolajick
, Haidi Zhou:
Charge trapping challenges of CMOS embedded complementary FeFETs. IMW 2024: 1-4- [c15]Omkar Phadke, Halid Mulaosmanovic, Stefan Dünkel, Sven Beyer, Shimeng Yu:
Reliability Assesement of Ferroelectric nvCAP for Small-Signal Capacitive Read-Out. IRPS 2024: 1-5 - [i6]Zijian Zhao, Sola Woo, Khandker Akif Aabrar, Sharadindu Gopal Kirtania, Zhouhang Jiang, Shan Deng, Yi Xiao, Halid Mulaosmanovic, Stefan Dünkel, Dominik Kleimaier, Steven Soss, Sven Beyer, Rajiv V. Joshi, Scott Meninger, Mohamed Mohamed, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Suman Datta, Shimeng Yu, Kai Ni:
Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate. CoRR abs/2403.04981 (2024) - 2023
- [c14]Franz Müller, Sourav De, Maximilian Lederer, Raik Hoffmann, Ricardo Olivo, Thomas Kämpfe, Konrad Seidel, Tarek Ali, Halid Mulaosmanovic, Stefan Dünkel, Johannes Müller, Sven Beyer, Gerald Gerlach:
Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications. IMW 2023: 1-4 - [i5]Paritosh Meihar, Rowtu Srinu, Vivek Saraswat, Sandip Lashkare, Halid Mulaosmanovic, Stefan Dünkel, Sven Beyer, Udayan Ganguly:
FeFET-based MirrorBit cell for High-density NVM storage. CoRR abs/2304.03124 (2023) - [i4]Zijian Zhao, Shan Deng, Swetaki Chatterjee, Zhouhang Jiang, Muhammad Shaffatul Islam, Yi Xiao, Yixin Xu, Scott Meninger, Mohamed Mohamed, Rajiv V. Joshi, Yogesh Singh Chauhan, Halid Mulaosmanovic, Stefan Dünkel, Dominik Kleimaier, Sven Beyer, Hussam Amrouch, Vijaykrishnan Narayanan, Kai Ni:
Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET. CoRR abs/2305.01484 (2023) - [i3]Paritosh Meihar, Rowtu Srinu, Sandip Lashkare, Ajay Kumar Singh, Halid Mulaosmanovic, Veeresh Deshpande, Stefan Dünkel, Sven Beyer, Udayan Ganguly:
Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for TCAM, Storage, and In-Memory Computing Applications. CoRR abs/2307.04705 (2023) - 2022
- [j1]Erika Covi, Halid Mulaosmanovic, Benjamin Max, Stefan Slesazeck, Thomas Mikolajick:
Ferroelectric-based synapses and neurons for neuromorphic computing. Neuromorph. Comput. Eng. 2(1): 12002 (2022) - [c13]Zhouhang Jiang, Yi Xiao, Swetaki Chatterjee, Halid Mulaosmanovic, Stefan Dünkel, Steven Soss, Sven Beyer, Rajiv V. Joshi, Yogesh Singh Chauhan, Hussam Amrouch, Vijaykrishnan Narayanan, Kai Ni:
Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window. VLSI Technology and Circuits 2022: 395-396 - [i2]Yixin Xu, Zijian Zhao, Yi Xiao, Tongguang Yu, Halid Mulaosmanovic, Dominik Kleimaier, Stefan Dünkel, Sven Beyer, Xiao Gong, Rajiv V. Joshi, X. Sharon Hu, Shixian Wen, Amanda Sofie Rios, Kiran Lekkala, Laurent Itti, Eric Homan, Sumitha George, Vijaykrishnan Narayanan, Kai Ni:
Ferroelectric FET based Context-Switching FPGA Enabling Dynamic Reconfiguration for Adaptive Deep Learning Machines. CoRR abs/2212.00089 (2022) - 2021
- [c12]Halid Mulaosmanovic, Patrick D. Lomenzo, Uwe Schroeder, Stefan Slesazeck, Thomas Mikolajick, Benjamin Max:
Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories. IRPS 2021: 1-6 - [i1]Benjamin Max, Michael Hoffmann, Halid Mulaosmanovic, Stefan Slesazeck, Thomas Mikolajick:
Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing. CoRR abs/2107.00945 (2021) - 2020
- [c11]Evelyn T. Breyer, Halid Mulaosmanovic, Stefan Slesazeck, Thomas Mikolajick:
Flexible Memory, Bit-Passing and Mixed Logic/Memory Operation of two Intercoupled FeFET Arrays. ISCAS 2020: 1-5
2010 – 2019
- 2019
- [c10]Thomas Mikolajick, Halid Mulaosmanovic, Michael Hoffmann, Benjamin Max, Terence Mittmann, Uwe Schroeder, Stefan Slesazeck:
Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories. DRC 2019: 207-208 - [c9]Sabine Kolodinski, Boli Peng, C. Esposito, Yves Zimmermann, Michael Schröter, Xin Xu, Paolo Valerio Testa, Corrado Carta, Frank Ellinger, Steffen Lehmann, M. Drescher, Clemens Mart, Maciej Wiatr, Wenke Weinreich, Violetta Sessi, Jens Trommer, Talha Chohan, Halid Mulaosmanovic, Walter M. Weber, Stefan Slesazeck:
IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF. ESSDERC 2019: 74-77 - [c8]Evelyn T. Breyer, Halid Mulaosmanovic, Jens Trommer, Thomas Melde, Stefan Dünkel, Martin Trentzsch, Sven Beyer, Thomas Mikolajick, Stefan Slesazeck:
Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory. ESSDERC 2019: 118-121 - [c7]Bharathwaj Suresh, Martin Bertele, Evelyn T. Breyer, Philipp Klein, Halid Mulaosmanovic, Thomas Mikolajick, Stefan Slesazeck, Elisabetta Chicca:
Simulation of integrate-and-fire neuron circuits using HfO2-based ferroelectric field effect transistors. ICECS 2019: 229-232 - [c6]Taras Ravsher, Halid Mulaosmanovic, Evelyn T. Breyer, Viktor Havel, Thomas Mikolajick, Stefan Slesazeck:
Adoption of 2T2C ferroelectric memory cells for logic operation. ICECS 2019: 791-794 - 2018
- [c5]Ahmedullah Aziz, Evelyn T. Breyer, An Chen, Xiaoming Chen, Suman Datta, Sumeet Kumar Gupta, Michael Hoffmann, Xiaobo Sharon Hu, Adrian M. Ionescu, Matthew Jerry, Thomas Mikolajick, Halid Mulaosmanovic, Kai Ni, Michael T. Niemier, Ian O'Connor, Atanu Saha, Stefan Slesazeck, Sandeep Krishna Thirumala, Xunzhao Yin:
Computing with ferroelectric FETs: Devices, models, systems, and applications. DATE 2018: 1289-1298 - [c4]Evelyn T. Breyer, Halid Mulaosmanovic, Stefan Slesazeck, Thomas Mikolajick:
Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology. ISCAS 2018: 1-5 - [c3]Ian O'Connor, Mayeul Cantan, Cédric Marchand, Bertrand Vilquin, Stefan Slesazeck, Evelyn T. Breyer, Halid Mulaosmanovic, Thomas Mikolajick, Bastien Giraud, Jean-Philippe Noel, Adrian M. Ionescu, Igor Stolichnov:
Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices. VLSI-SoC 2018: 180-183 - 2016
- [b1]Halid Mulaosmanovic:
Characterization and modeling of innovative solid-state memory technologies. Polytechnic University of Milan, Italy, 2016 - [c2]Uwe Schroeder, Milan Pesic, Tony Schenk, Halid Mulaosmanovic, Stefan Slesazeck, Johannes Ocker, Claudia Richter, Ekaterina Yurchuk, K. Khullar, Johannes Müller, Patrick Polakowski, E. D. Grimley, J. M. LeBeau, Stefan Flachowsky, S. Jansen, Sabine Kolodinski, Ralf Van Bentum, Alfred Kersch, Christopher Künneth, Thomas Mikolajick:
Impact of field cycling on HfO2 based non-volatile memory devices. ESSDERC 2016: 364-368 - 2014
- [c1]Halid Mulaosmanovic, Christian Monzio Compagnoni, Niccolo Castellani, Gianpietro Carnevale, Domenico Ventrice, Paolo Fantini, Alessandro S. Spinelli, Andrea L. Lacaita, Augusto Benvenuti:
Data regeneration and disturb immunity of T-RAM cells. ESSDERC 2014: 46-49
Coauthor Index
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