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ORCIDDmitry Veksler
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2020 – today
- 2023
[c7]Gennadi Bersuker, E. Tang, Dmitry Veksler:
Signal duration sensitive degradation in scaled devices. IRPS 2023: 1-5- 2022
- [c6]S. S. Teja Nibhanupudi, Dmitry Veksler, Anupam Roy
, Matthew Coupin, Kevin C. Matthews, Jamie Warner, Gennadi Bersuker, Jaydeep P. Kulkarni, Sanjay Kumar Banerjee:
Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices. DRC 2022: 1-2 - [c5]James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen:
Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. IRPS 2022: 36-1 - 2021
- [c4]James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen:
Mitigating switching variability in carbon nanotube memristors. IRPS 2021: 1-4 - 2020
- [c3]Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, Maribeth Mason, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell, Thomas Rueckes, Lee Cleveland, Harry Luan, David C. Gilmer:
Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions. IRPS 2020: 1-4
2010 – 2019
- 2019
- [c2]Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell:
Switching Variability Factors in Compliance-Free Metal Oxide RRAM. IRPS 2019: 1-5 - 2015
- [c1]G. Sereni, Luca Vandelli, Roberto Cavicchioli, Luca Larcher, Dmitry Veksler, Gennadi Bersuker:
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs. IRPS 2015: 2 - [i1]Brian L. Ji, H. Li, Q. Ye, S. Gausepohl, S. Deora, Dmitry Veksler, S. Vivekanand, H. Chong, H. Stamper, T. Burroughs, C. Johnson, M. Smalley, S. Bennett, V. Kaushik, J. Piccirillo, M. Rodgers, M. Passaro, M. Liehr:
In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory. CoRR abs/1509.00070 (2015)
Coauthor Index
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