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2020 – today
- 2024
[c12]Sukhrob Abdulazhanov, Q. H. Le, David Lehninger, Ayse Sünbül, Thomas Kämpfe, G. Gerlach:
Improved Tunability of BEoL-integrated Hafnium Zirconium Oxide Varactors for mmWave Applications. DRC 2024: 1-2- [c11]Maximilian Lederer, Franz Müller, Raik Hoffmann, Ricardo Olivo, Yannick Raffel, Shouzhuo Yang, Sourav De, Roman Potjan, Oliver Ostien, Abdelrahman Altawil, Ayse Sünbül, David Lehninger, Thomas Kämpfe, Konrad Seidel:
Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions. IMW 2024: 1-4 - [c10]Ayse Sünbül, David Lehninger, Raik Hoffmann, Hannes Mähne, Kerstin Bernert, Steffen Thiem, Thomas Kämpfe, Konrad Siedel, Maximilian Lederer, Lukas M. Eng
:
Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors. IRPS 2024: 1-5 - 2023
- [c9]Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, David Lehninger, Thomas Kämpfe, Gerald Gerlach:
Permittivity Characterization of Ferroelectric Thin-Film Hafnium Zirconium Oxide Varactors up to 170 GHz. DRC 2023: 1-2 - [c8]David Lehninger, Ayse Sünbül, Ricardo Olivo, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer:
Ferroelectric HfO2/ZrO2 Superlattices with Improved Leakage at Bias and Temperature Stress. IMW 2023: 1-4 - [c7]Konrad Seidel, David Lehninger, Franz Müller, Yannick Raffel, Ayse Sünbül, Ricardo Revello, Raik Hoffmann, Sourav De, Thomas Kämpfe, Maximilian Lederer:
Hafnium oxide-based Ferroelectric Memories: Are we ready for Application? IMW 2023: 1-4 - 2022
- [c6]Sukhrob Abdulazhanov, Dang Khoa Huynh, Quang Huy Le, David Lehninger, Thomas Kämpfe, Gerald Gerlach:
BEoL integrated hafnium zirconium oxide varactors for tunable mmWave applications. ESSDERC 2022: 253-256 - [c5]Tarek Ali, Ricardo Olivo, S. Kerdilès, David Lehninger, Maximilian Lederer, Sourav De, A.-S. Royet, Ayse Sünbül, A. Prabhu, Kati Kühnel, Malte Czernohorsky, M. Rudolph, Raik Hoffmann, Christelle Charpin-Nicolle, Laurent Grenouillet, Thomas Kämpfe, Konrad Seidel:
Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability. IMW 2022: 1-4 - [c4]David Lehninger, Hannes Mähne, Tarek Ali, Raik Hoffmann, Ricardo Olivo, Maximilian Lederer, Konstantin Mertens, Thomas Kämpfe, Kati Biedermann, Matthias Landwehr, Andreas Heinig, Defu Wang, Yukai Shen, Kerstin Bernert, Steffen Thiem, Konrad Seidel:
Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology. IMW 2022: 1-4 - [c3]Ayse Sünbül, Tarek Ali, Raik Hoffmann, Ricardo Revello, Yannick Raffel, Pardeep Duhan, David Lehninger, Kati Kühnel, Matthias Rudolph, Sebastian Oehler, Philipp Schramm, Malte Czernohorsky, Konrad Seidel, Thomas Kämpfe, Lukas M. Eng:
Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions. IRPS 2022: 11-1 - [c2]Konrad Seidel, David Lehninger, Raik Hoffmann, Tarek Ali, Maximilian Lederer, Ricardo Revello, Konstantin Mertens, Kati Biedermann, Yukai Shen, Defu Wang, Matthias Landwehr, Andreas Heinig, Thomas Kämpfe, Hannes Mähne, Kerstin Bernert, Steffen Thiem:
Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer. VLSI Technology and Circuits 2022: 355-356 - 2020
- [c1]Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer, Raik Hoffmann, Clemens Mart, Mahsa N. Kalkani, Philipp Steinke, Thomas Kämpfe, Johannes Müller, Jan Van Houdt, Konrad Seidel, Lukas M. Eng:
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. IRPS 2020: 1-9
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