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ORCIDSunghyun Park 0003
Person information
- affiliation: Samsung Electronics Co., Ltd., South Korea
Other persons with the same name
- Sunghyun Park (aka: SungHyun Park, Sung-Hyun Park) — disambiguation page
- Sunghyun Park 0001 — University of Southern California, Los Angeles, CA, USA
- Sunghyun Park 0002 — Massachusetts Institute of Technology, Cambridge, MA, USA
- Sunghyun Park 0004 — OctoAI, Seattle, WA, USA (and 1 more)
- Sunghyun Park 0005
![[0009-0006-1056-2826]](https://dblp.dagstuhl.de/img/orcid-mark.12x12.png "0009-0006-1056-2826")
— Yonsei University - Sunghyun Park 0006 — University of Michigan, Ann Arbor, USA
- Sunghyun Park 0007 — Georgia Tech, Atlanta, GA, USA
- Sunghyun Park 0008 (aka: SungHyun Park 0008) — Soongsil University, Department of Smart Systems Software, Seoul, Korea
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2010 – 2019
- 2018
[c4]Taejoong Song, Jonghoon Jung, Woojin Rim, Hoonki Kim, Yongho Kim, Changnam Park, Jeongho Do, Sunghyun Park, Sungwee Cho, Hyuntaek Jung, Bongjae Kwon, Hyun-Su Choi, Jaeseung Choi, Jong Shik Yoon:
A 7nm FinFET SRAM using EUV lithography with dual write-driver-assist circuitry for low-voltage applications. ISSCC 2018: 198-200- 2017
- [j2]Taejoong Song, Woojin Rim, Sunghyun Park, Yongho Kim, Giyong Yang, Hoonki Kim, Sanghoon Baek, Jonghoon Jung, Bongjae Kwon, Sungwee Cho, Hyuntaek Jung, Yongjae Choo, Jaeseung Choi:
A 10 nm FinFET 128 Mb SRAM With Assist Adjustment System for Power, Performance, and Area Optimization. IEEE J. Solid State Circuits 52(1): 240-249 (2017) - [c3]Taejoong Song, Hoonki Kim, Woojin Rim, Yongho Kim, Sunghyun Park, Changnam Park, Minsun Hong, Giyong Yang, Jeongho Do, Jinyoung Lim, Seungyoung Lee, Ingyum Kim, Sanghoon Baek, Jonghoon Jung, Daewon Ha, Hyungsoon Jang, Taejung Lee, Chul-Hong Park, Bongjae Kwon, Hyuntaek Jung, Sungwee Cho, Yongjae Choo, Jaeseung Choi:
12.2 A 7nm FinFET SRAM macro using EUV lithography for peripheral repair analysis. ISSCC 2017: 208-209 - 2016
- [c2]Taejoong Song, Woojin Rim, Sunghyun Park, Yongho Kim, Jonghoon Jung, Giyong Yang, Sanghoon Baek, Jaeseung Choi, Bongjae Kwon, Yunwoo Lee, Sungbong Kim, Gyu-Hong Kim, Hyo-Sig Won, Ja-Hum Ku, Sunhom Steve Paak, E. S. Jung, Steve Sungho Park, Kinam Kim:
17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization. ISSCC 2016: 306-307 - 2015
- [j1]Taejoong Song, Woojin Rim, Jonghoon Jung, Giyong Yang, Jaeho Park, Sunghyun Park, Yongho Kim, Kang-Hyun Baek, Sanghoon Baek, Sang-Kyu Oh, Jinsuk Jung, Sungbong Kim, Gyu-Hong Kim, Jintae Kim, Young-Keun Lee, Sang-Pil Sim, Jong Shik Yoon, Kyu-Myung Choi, Hyo-Sig Won, Jaehong Park:
A 14 nm FinFET 128 Mb SRAM With VMIN Enhancement Techniques for Low-Power Applications. IEEE J. Solid State Circuits 50(1): 158-169 (2015) - 2014
- [c1]Taejoong Song, Woojin Rim, Jonghoon Jung, Giyong Yang, Jaeho Park, Sunghyun Park, Kang-Hyun Baek, Sanghoon Baek, Sang-Kyu Oh, Jinsuk Jung, Sungbong Kim, Gyu-Hong Kim, Jintae Kim, Young-Keun Lee, Kee Sup Kim, Sang-Pil Sim, Jong Shik Yoon, Kyu-Myung Choi:
13.2 A 14nm FinFET 128Mb 6T SRAM with VMIN-enhancement techniques for low-power applications. ISSCC 2014: 232-233
Coauthor Index
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