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ORCIDDoo-Hyun Kim
- > Home > Persons > Doo-Hyun Kim
Publications
- 2018
[j14]Chulbum Kim
, Doo-Hyun Kim, Woopyo Jeong, Hyun-Jin Kim, Il-Han Park, Hyun Wook Park, Jong-Hoon Lee, Jiyoon Park, Yang-Lo Ahn, Ji Young Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sanggi Hong, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yub Lee, Ki-Tae Park, Kyehyun Kyung:
A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory. IEEE J. Solid State Circuits 53(1): 124-133 (2018)- 2017
- [j13]Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong-Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Cheon An Lee, Young-Sun Min, Moosung Kim, Ansoo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doosub Lee, Hyunggon Kim, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yup Lee, Ki-Tae Park, Kyehyun Kyung:
256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers. IEEE J. Solid State Circuits 52(1): 210-217 (2017) - [c54]Chulbum Kim, Ji-Ho Cho, Woopyo Jeong, Il-Han Park, Hyun Wook Park, Doo-Hyun Kim, Daewoon Kang, Sunghoon Lee, Ji-Sang Lee, Wontae Kim, Jiyoon Park, Yang-Lo Ahn, Jiyoung Lee, Jong-Hoon Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Yelim Kwon, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sangki Hong, Byunghoon Jeong, Hyun-Jin Kim, Chunan Lee, Young-Sun Min, Inryul Lee, In-Mo Kim, Sunghoon Kim, Dongkyu Yoon, Ki-Sung Kim, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yub Lee, Ki-Tae Park, Kyehyun Kyung:
11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory. ISSCC 2017: 202-203 - 2016
- [j12]Woopyo Jeong, Jae-Woo Im, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok-Min Yoon, Wook-Ghee Hahn, Jinho Ryu, Sang-Won Shim, Kyung-Tae Kang, Jeong-Don Ihm, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Moosung Kim, Jae-hoon Jang, Sang-Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate. IEEE J. Solid State Circuits 51(1): 204-212 (2016) - [c53]Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong-Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Jeong-Don Ihm, Doo-Gon Kim, Young-Sun Min, Moosung Kim, Ansoo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doosub Lee, Hyunggon Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers. ISSCC 2016: 130-131 - 2015
- [c52]Jae-Woo Im, Woopyo Jeong, Doo-Hyun Kim, Sangwan Nam, Dong-Kyo Shim, Myung-Hoon Choi, Hyun-Jun Yoon, Dae-Han Kim, Youse Kim, Hyun Wook Park, Dong-Hun Kwak, Sang-Won Park, Seok-Min Yoon, Wook-Ghee Hahn, Jinho Ryu, Sang-Won Shim, Kyung-Tae Kang, Sung-Ho Choi, Jeong-Don Ihm, Young-Sun Min, In-Mo Kim, Doosub Lee, Ji-Ho Cho, Ohsuk Kwon, Ji-Sang Lee, Moosung Kim, Sang-Hyun Joo, Jae-hoon Jang, Sang-Won Hwang, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate. ISSCC 2015: 1-3 - 2014
- [c49]Ki-Tae Park, Jin-Man Han, Dae-Han Kim, Sangwan Nam, Kihwan Choi, Minsu Kim, Pansuk Kwak, Doosub Lee, Yoon-Hee Choi, Kyung-Min Kang, Myung-Hoon Choi, Dong-Hun Kwak, Hyun Wook Park, Sang-Won Shim, Hyun-Jun Yoon, Doo-Hyun Kim, Sang-Won Park, Kangbin Lee, Kuihan Ko, Dong-Kyo Shim, Yang-Lo Ahn, Jeunghwan Park, Jinho Ryu, Donghyun Kim, Kyunghwa Yun, Joonsoo Kwon, Seunghoon Shin, Dongkyu Youn, Won-Tae Kim, Taehyun Kim, Sung-Jun Kim, Sungwhan Seo, Hyunggon Kim, Dae-Seok Byeon, Hyang-Ja Yang, Moosung Kim, Myong-Seok Kim, Jinseon Yeon, Jae-hoon Jang, Han-Soo Kim, Woonkyung Lee, Duheon Song, Sungsoo Lee, Kyehyun Kyung, Jeong-Hyuk Choi:
19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming. ISSCC 2014: 334-335
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