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ORCIDSang-Hoon Kim
- > Home > Persons > Sang-Hoon Kim
Publications
- 2025
[j32]Sung-Yong Cho
, Moon-Chul Choi, Jaehyeok Baek, Donggun An, Sang-Hoon Kim, Daewoong Lee, Seongyeal Yang, Se-Mi Kim, Gil-Young Kang, Juseop Park, Kyung-Ho Lee, Hwan-Chul Jung, Gun-hee Cho, Chan-Yong Lee, Hye-Ran Kim, Yong-Jae Shin, Hanna Park, Sang-Yong Lee, Jonghyuk Kim, Bokyeon Won, Jungil Mok, Kijin Kim, Unhak Lim, Hongjun Jin, YoungSeok Lee, Young-Tae Kim, Heonjoo Ha, Jinchan Ahn, Wonju Sung, Yoontaek Jang, Hoyoung Song, Hyodong Ban, TaeHoon Park, Changsik Yoo, Tae-Young Oh, SangJoon Hwang:
A 16-Gb 37-Gb/s GDDR7 DRAM With PAM3-Optimized TRX Equalization and ZQ Calibration. IEEE J. Solid State Circuits 60(1): 184-196 (2025)- [c33]Sang-Hoon Kim, Jaehyeok Baek, Moon-Chul Choi, Daewoong Lee, Donggun An, Se-Mi Kim, Yeonggeun Song, Minkyo Shim, Sung-Yong Cho, Dongha Lee, Gun-hee Cho, Inwoo Jun, Juseop Park, TaeYoon Lee, Hwan-Chul Jung, Chanyong Lee, Gil-Young Kang, Hye-Ran Kim, Jongmyung Lee, Young Su Joo, Hyo-Jin Jung, Bokyeon Won, Ji-Hak Yu, Sangkeun Han, Yechan Hwang, Chungman Kim, Seok-Jung Kim, YoungSeok Lee, Young-Tae Kim, Myeong-O. Kim, Wonhwa Shin, Tae-Young Oh, SangJoon Hwang:
30.3 A 24Gb 42.5Gb/s GDDR7 DRAM with Low-Power WCK Distribution, an RC-Optimized Dual-Emphasis TX, and Voltage/Time-Margin-Enhanced Power Reduction. ISSCC 2025: 508-510 - 2023
- [j30]Daewoong Lee, Jaehyeok Baek, Hye-Jung Kwon, Daehyun Kwon, Chulhee Cho, Sang-Hoon Kim, Donggun An, Chulsoon Chang, Unhak Lim, Jiyeon Im, Wonju Sung, Hye-Ran Kim, Sun-Young Park, Hyoung-Joo Kim, Ho-Seok Seol, Juhwan Kim, Jung-Bum Shin, Gil-Young Kang, Yong-Hun Kim, Sooyoung Kim, Wansoo Park, Seok-Jung Kim, Chan-Yong Lee, Seungseob Lee, TaeHoon Park, Chi-Sung Oh, Hyodong Ban, Hyungjong Ko, Hoyoung Song, Tae-Young Oh, SangJoon Hwang, Kyung Suk Oh, Jung-Hwan Choi, Jooyoung Lee:
A 16-Gb T-Coil-Based GDDR6 DRAM With Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus Achieving 27-Gb/s/Pin in NRZ. IEEE J. Solid State Circuits 58(1): 279-290 (2023)
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