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N. Mohankumar 0002
Person information
- affiliation: SKP Engineering College, Thiruvannamalai, India
- affiliation (former): Jadavpur University, Kolkata, India
Other persons with the same name
- N. Mohankumar 0001 — Indira Gandhi Centre for Atomic Research, Radiation Safety Division, Kalpakkam, India
- N. Mohankumar 0003 — Amrita Vishwa Vidyapeetham, Coimbatore, India
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2010 – 2019
- 2015
- [j8]Binola K. Jebalin, A. Shobha Rekh, P. Prajoon, N. Mohankumar, D. Nirmal:
The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs. Microelectron. J. 46(12): 1387-1391 (2015) - 2014
- [j7]Sudhansu Kumar Pati, Kalyan Koley, Arka Dutta, N. Mohankumar, Chandan Kumar Sarkar:
Study of body and oxide thickness variation on analog and RF performance of underlap DG-MOSFETs. Microelectron. Reliab. 54(6-7): 1137-1142 (2014) - [j6]P. Anandan, A. Nithya, N. Mohankumar:
Simulation of flicker noise in gate-all-around Silicon Nanowire MOSFETs including interface traps. Microelectron. Reliab. 54(12): 2723-2727 (2014) - 2013
- [j5]D. Nirmal, P. Vijayakumar, K. Shruti, N. Mohankumar:
Nanoscale channel engineered double gate MOSFET for mixed signal applications using high-k dielectric. Int. J. Circuit Theory Appl. 41(6): 608-618 (2013) - [j4]Radhakrishnan Saravanakumar, N. Mohankumar, J. Raja:
Proficient Node Scheduling Protocol for Homogeneous and Heterogeneous Wireless Sensor Networks. Int. J. Distributed Sens. Networks 9 (2013) - [j3]D. Nirmal, P. Vijayakumar, Divya Mary Thomas, Binola K. Jebalin, N. Mohankumar:
Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics. Microelectron. Reliab. 53(3): 499-504 (2013) - 2012
- [j2]Kalyan Koley, Binit Syamal, Atanu Kundu, N. Mohankumar, Chandan Kumar Sarkar:
Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions. Microelectron. Reliab. 52(11): 2572-2578 (2012)
2000 – 2009
- 2009
- [j1]N. Mohankumar, Binit Syamal, Chandan Kumar Sarkar:
Investigation of novel attributes of single halo dual-material double gate MOSFETs for analog/RF applications. Microelectron. Reliab. 49(12): 1491-1497 (2009)
Coauthor Index
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