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Néstor Berbel

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2020 – today

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2024
[c9]
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  - conf/isie/LumbrerasZBR24
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David Lumbreras, Jordi Zaragoza, Néstor Berbel, Luis Romeral:
Evaluating Modulation Techniques in a Hybrid T-Type Power Converter based on GaN and SiC Semiconductors for Electric Transport. ISIE 2024: 1-6
[c8]
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  - conf/isie/MartinezZLCB24
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Eduard Martínez, Jordi Zaragoza, Manuel Lamich, Gabriel J. Capella, Néstor Berbel:
Exploring GaN Semiconductors Power Losses in DAB Converter Simulation via PLECS. ISIE 2024: 1-8
[c7]
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  - conf/isie/VilellaBCLZ24
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Manel Vilella, Néstor Berbel, Gabriel J. Capella, Manuel Lamich, Jordi Zaragoza:
Series-Parallel Connection of GaN-based DAB Converters for Electric Vehicle Charging. ISIE 2024: 1-6
[c6]
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Manel Vilella, Jordi Zaragoza, Néstor Berbel, Gabriel J. Capella, Manuel Lamich:
Variable frequency control strategy for transformers surge current reduction in DAB converters. ISIE 2024: 1-6
2023
[j4]
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  - journals/tie/Acosta-Cambranis23
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Fernando Acosta-Cambranis, Jordi Zaragoza, Néstor Berbel, Gabriel J. Capella, Luis Romeral:
Constant Common-Mode Voltage Strategies Using Sigma-Delta Modulators in Five-Phase VSI. IEEE Trans. Ind. Electron. 70(3): 2189-2198 (2023)
2021
[c5]
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David Lumbreras, Jordi Zaragoza, Néstor Berbel, Juan Mon, Eduardo Gálvez, Alfonso Collado:
High-Frequency Spread-Spectrum Modulations for Wide-Bandgap Voltage Source Converters. ICIT 2021: 377-382
[c4]
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Néstor Berbel, Gabriel J. Capella, Jordi Zaragoza, Jose Luis Romeral:
Performance Assessment of a Wide-Bandgap-Semiconductor Dual-Active-Bridge Converter for Electrical Vehicles. ISIE 2021: 1-6
[c3]
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David Lumbreras, Jordi Zaragoza, Néstor Berbel, Juan Mon, Eduardo Gálvez, Alfonso Collado:
Efficiency Comparison of Power Converters Based on SiC and GaN Semiconductors at High Switching Frequencies. ISIE 2021: 1-6

2010 – 2019

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2019
[c2]
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  - conf/iecon/Ferrer-ArnauBCZ19
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Lluís Ferrer-Arnau, Néstor Berbel, Gabriel J. Capella, Jordi Zaragoza:
Study of modulation techniques applied to full bridge single-phase inverters based on wide-bandgap semiconductors. IECON 2019: 2032-2037
2013
[c1]
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  - conf/emccompo/BerbelFG13
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Néstor Berbel, Raúl Fernández-García, Ignacio Gil:
Characterization of conducted emission at high frequency under different temperature. EMC Compo 2013: 147-151
2011
[j3]
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  - journals/mr/LiBBBF11
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Binhong Li, Néstor Berbel, Alexandre Boyer, Sonia Bendhia, Raúl Fernández-García:
Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences. Microelectron. Reliab. 51(9-11): 1557-1560 (2011)
[j2]
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Néstor Berbel, Raúl Fernández-García, Ignacio Gil, Binhong Li, Alexandre Boyer, Sonia Bendhia:
Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout. Microelectron. Reliab. 51(9-11): 1564-1567 (2011)

2000 – 2009

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2009
[j1]
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Néstor Berbel, Raúl Fernández-García, Ignacio Gil:
Modelling and experimental verification of the impact of negative bias temperature instability on CMOS inverter. Microelectron. Reliab. 49(9-11): 1048-1051 (2009)

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