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ORCIDAkinobu Teramoto
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2020 – today
- 2020
[c7]Ryo Akimoto, Rihito Kuroda, Akinobu Teramoto
, Takezo Mawaki, Shinya Ichino, Tomoyuki Suwa, Shigetoshi Sugawa:
Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes. IRPS 2020: 1-6
2010 – 2019
- 2018
- [c6]Norichika Ogata, Akihisa Shina, Takayuki Komiya, Yoji Iizuka, Ken Matsuse, Fuminobu Imaizumi, Tomoyuki Suwa, Akinobu Teramoto:
An Electrical Impedance Biosensor Array for Tracking Moving Cells. IEEE SENSORS 2018: 1-4 - [c5]Akinobu Teramoto, Keiichi Hashimoto, Tomoyuki Suwa, Jun-ichi Tsuchimoto, Marie Hayashi, Hyeonwoo Park, Shigetoshi Sugawa:
Reliability of MgO in magnetic tunnel junctions formed by MgO sputtering and Mg oxidation. IRPS 2018: 4-1 - 2014
- [c4]A. Yonezawa, Rihito Kuroda, Akinobu Teramoto, T. Obara, Shigetoshi Sugawa:
A statistical evaluation of effective time constants of random telegraph noise with various operation timings of in-pixel source follower transistors. IMSE 2014: 90220F - 2013
- [c3]Rihito Kuroda, A. Yonezawa, Akinobu Teramoto, T. L. Li, Yasuhisa Tochigi, Shigetoshi Sugawa:
A statistical evaluation of low frequency noise of in-pixel source follower-equivalent transistors with various channel types and body bias. Sensors, Cameras, and Systems for Industrial and Scientific Applications 2013: 86590D - [c2]Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi:
High-speed and highly accurate evaluation of electrical characteristics in MOSFETs. ICICDT 2013: 187-190 - 2012
- [c1]Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi:
The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers. ESSDERC 2012: 213-216
2000 – 2009
- 2009
- [j6]Masahiro Konda, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Tadahiro Ohmi:
Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces. IEICE Trans. Electron. 92-C(5): 664-670 (2009) - 2008
- [j5]Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi:
Accurate negative bias temperature instability lifetime prediction based on hole injection. Microelectron. Reliab. 48(10): 1649-1654 (2008) - 2007
- [j4]Kazufumi Watanabe, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi:
Examination of degradation mechanism due to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction. Microelectron. Reliab. 47(2-3): 409-418 (2007) - [j3]Koutarou Tanaka, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi:
High quality gate insulator film formation on SiC using by microwave-excited high-density plasma. Microelectron. Reliab. 47(4-5): 786-789 (2007) - [j2]Rihito Kuroda, Akinobu Teramoto, Kazufumi Watanabe, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi:
Circuit level prediction of device performance degradation due to negative bias temperature stress. Microelectron. Reliab. 47(6): 930-936 (2007) - 2001
- [j1]Akinobu Teramoto, H. Umeda, K. Azamawari, Kiyoteru Kobayashi, K. Shiga, J. Komori, Y. Ohno, A. Shigetomi:
Time-dependent dielectric breakdown of SiO2 films in a wide electric field range. Microelectron. Reliab. 41(1): 47-52 (2001)
Coauthor Index
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