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ORCIDShigetoshi Sugawa
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2020 – today
- 2022
[j19]Yuki Sugama, Yoshiaki Watanabe, Rihito Kuroda
, Masahiro Yamamoto, Tetsuya Goto, Toshiro Yasuda, Hiroshi Hamori, Naoya Kuriyama, Shigetoshi Sugawa:
Two High-Precision Proximity Capacitance CMOS Image Sensors with Large Format and High Resolution. Sensors 22(7): 2770 (2022)- 2021
- [c36]Shunta Kamoshita, Manabu Suzuki, Rihito Kuroda, Shigetoshi Sugawa:
A Proposal of Analog Correlated Multiple Sampling with High Density Capacitors for Low Noise CMOS Image Sensors. Imaging Sensors and Systems 2021: 1-6 - 2020
- [j18]Yhang Ricardo Sipauba Carvalho da Silva, Rihito Kuroda, Shigetoshi Sugawa:
An Optical Filter-Less CMOS Image Sensor with Differential Spectral Response Pixels for Simultaneous UV-Selective and Visible Imaging. Sensors 20(1): 13 (2020) - [j17]Manabu Suzuki, Yuki Sugama, Rihito Kuroda, Shigetoshi Sugawa:
Over 100 Million Frames per Second 368 Frames Global Shutter Burst CMOS Image Sensor with Pixel-wise Trench Capacitor Memory Array. Sensors 20(4): 1086 (2020) - [c35]Yasuyuki Fujihara, Maasa Murata, Shota Nakayama, Rihito Kuroda, Shigetoshi Sugawa:
An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors. Imaging Sensors and Systems 2020: 1-6 - [c34]Ryo Akimoto, Rihito Kuroda, Akinobu Teramoto, Takezo Mawaki, Shinya Ichino, Tomoyuki Suwa, Shigetoshi Sugawa:
Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes. IRPS 2020: 1-6
2010 – 2019
- 2019
- [j16]Yhang Ricardo Sipauba Carvalho da Silva, Rihito Kuroda, Shigetoshi Sugawa:
A Highly Robust Silicon Ultraviolet Selective Radiation Sensor Using Differential Spectral Response Method. Sensors 19(12): 2755 (2019) - [j15]Isao Takayanagi, Ken Miyauchi, Shunsuke Okura, Kazuya Mori, Junichi Nakamura, Shigetoshi Sugawa:
A 120-ke- Full-Well Capacity 160-µV/e- Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor. Sensors 19(24): 5572 (2019) - 2018
- [j14]Kohei Terashima, Kazuhiro Wako, Yasuyuki Fujihara, Yusuke Aoyagi, Maasa Murata, Yosei Shibata, Shigetoshi Sugawa, Takahiro Ishinabe, Rihito Kuroda, Hideo Fujikake:
High Speed and Narrow-Bandpass Liquid Crystal Filter for Real-Time Multi Spectral Imaging Systems. IEICE Trans. Electron. 101-C(11): 897-900 (2018) - [c33]Manabu Suzuki, Masashi Suzuki, Rihito Kuroda, Shigetoshi Sugawa:
A Preliminary Chip Evaluation toward Over 50Mfps Burst Global Shutter Stacked CMOS Image Sensor. IMSE 2018: 1-4 - [c32]Akinobu Teramoto, Keiichi Hashimoto, Tomoyuki Suwa, Jun-ichi Tsuchimoto, Marie Hayashi, Hyeonwoo Park, Shigetoshi Sugawa:
Reliability of MgO in magnetic tunnel junctions formed by MgO sputtering and Mg oxidation. IRPS 2018: 4-1 - 2017
- [c31]Yasumasa Koda, Rihito Kuroda, Masaya Hara, Hiroyuki Tsunoda, Shigetoshi Sugawa:
High Sensitivity and High Readout Speed Electron Beam Detector using Steep pn Junction Si diode for Low Acceleration Voltage. IMSE 2017: 14-17 - 2016
- [c30]Yasuyuki Fujihara, Satoshi Nasuno, Shunichi Wakashima, Yusuke Aoyagi, Rihito Kuroda, Shigetoshi Sugawa:
190-1100 nm Waveband multispectral imaging system using high light resistance wide dynamic range CMOS image sensor. IEEE SENSORS 2016: 1-3 - [c29]Hidekazu Ishii, Masaaki Nagase, Nobukazu Ikeda, Yoshinobu Shiba, Yasuyuki Shirai, Rihito Kuroda, Shigetoshi Sugawa:
A high sensitivity compact gas concentration sensor using UV light and charge amplifier circuit. IEEE SENSORS 2016: 1-3 - [c28]Hidetake Sugo, Shunichi Wakashima, Rihito Kuroda, Yuichiro Yamashita, Hirofumi Sumi, Tzu-Jui Wang, Po-Sheng Chou, Ming-Chieh Hsu, Shigetoshi Sugawa:
A dead-time free global shutter CMOS image sensor with in-pixel LOFIC and ADC using pixel-wis e connections. VLSI Circuits 2016: 1-2 - 2015
- [c27]Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa:
Analysis of pixel gain and linearity of CMOS image sensor using floating capacitor load readout operation. IMSE 2015: 94030E - [c26]Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa:
A linear response single exposure CMOS image sensor with 0.5e- readout noise and 76ke- full well capacity. VLSIC 2015: 88- - 2014
- [j13]Rihito Kuroda, Shigetoshi Sugawa:
Si image sensors with wide spectral response and high robustness to ultraviolet light exposure. IEICE Electron. Express 11(10): 20142004 (2014) - [c25]Takahiro Akutsu, Shun Kawada, Yasumasa Koda, Taiki Nakazawa, Rihito Kuroda, Shigetoshi Sugawa:
A 1024×1 linear photodiode array sensor with fast readout speed flexible pixel-level integration time and high stability to UV light exposure. IMSE 2014: 90220L - [c24]A. Yonezawa, Rihito Kuroda, Akinobu Teramoto, T. Obara, Shigetoshi Sugawa:
A statistical evaluation of effective time constants of random telegraph noise with various operation timings of in-pixel source follower transistors. IMSE 2014: 90220F - [c23]Ken Miyauchi, Tohru Takeda, K. Hanzawa, Yasuhisa Tochigi, S. Sakai, Rihito Kuroda, H. Tominaga, R. Hirose, K. Takubo, Y. Kondo, Shigetoshi Sugawa:
Pixel structure with 10 nsec fully charge transfer time for the 20m frame per second burst CMOS image sensor. IMSE 2014: 902203 - [c22]F. Shao, D. Kimoto, K. Furukawa, Hidetake Sugo, T. Takeda, Ken Miyauchi, Yasuhisa Tochigi, Rihito Kuroda, Shigetoshi Sugawa:
Ultra-high speed video capturing of time dependent dielectric breakdown of metal-oxide-silicon capacitor up to 10M frame per second. IMSE 2014: 902205 - 2013
- [j12]Yasuhisa Tochigi, Katsuhiko Hanzawa, Yuri Kato, Rihito Kuroda, Hideki Mutoh, Ryuta Hirose, Hideki Tominaga, Kenji Takubo, Yasushi Kondo, Shigetoshi Sugawa:
A Global-Shutter CMOS Image Sensor With Readout Speed of 1-Tpixel/s Burst and 780-Mpixel/s Continuous. IEEE J. Solid State Circuits 48(1): 329-338 (2013) - [c21]Shun Kawada, Rihito Kuroda, Shigetoshi Sugawa:
Color reproductivity improvement with additional virtual color filters for WRGB image sensor. Color Imaging: Displaying, Processing, Hardcopy, and Applications 2013: 865205 - [c20]Yasumasa Koda, Rihito Kuroda, Taiki Nakazawa, Y. Nakao, Shigetoshi Sugawa:
A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack. Sensors, Cameras, and Systems for Industrial and Scientific Applications 2013: 86590J - [c19]Rihito Kuroda, A. Yonezawa, Akinobu Teramoto, T. L. Li, Yasuhisa Tochigi, Shigetoshi Sugawa:
A statistical evaluation of low frequency noise of in-pixel source follower-equivalent transistors with various channel types and body bias. Sensors, Cameras, and Systems for Industrial and Scientific Applications 2013: 86590D - [c18]Tsung-Ling Li, Yasuyuki Goda, Shunichi Wakashima, Rihito Kuroda, Shigetoshi Sugawa:
New analog readout architecture for low noise CMOS image sensors using column-parallel forward noise-canceling circuitry. Sensors, Cameras, and Systems for Industrial and Scientific Applications 2013: 86590E - [c17]Shunichi Wakashima, Y. Goda, T. L. Li, Rihito Kuroda, Shigetoshi Sugawa:
A CMOS image sensor using floating capacitor load readout operation. Sensors, Cameras, and Systems for Industrial and Scientific Applications 2013: 86590I - [c16]Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi:
High-speed and highly accurate evaluation of electrical characteristics in MOSFETs. ICICDT 2013: 187-190 - 2012
- [c15]Taiki Nakazawa, Rihito Kuroda, Yasumasa Koda, Shigetoshi Sugawa:
Photodiode dopant structure with atomically flat Si surface for high-sensitivity and stability to UV light. Sensors, Cameras, and Systems for Industrial and Scientific Applications 2012: 82980M - [c14]Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi:
The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers. ESSDERC 2012: 213-216 - [c13]Yasuhisa Tochigi, Katsuhiko Hanzawa, Yuri Kato, Rihito Kuroda, Hideki Mutoh, Ryuta Hirose, Hideki Tominaga, Kenji Takubo, Yasushi Kondo, Shigetoshi Sugawa:
A global-shutter CMOS image sensor with readout speed of 1Tpixel/s burst and 780Mpixel/s continuous. ISSCC 2012: 382-384 - 2011
- [c12]Shun Kawada, Rihito Kuroda, Shigetoshi Sugawa:
A robust color signal processing with wide dynamic range WRGB CMOS image sensor. Digital Photography 2011: 78760W - [c11]Yasuhisa Tochigi, Katsuhiko Hanzawa, Yuri Kato, Nana Akahane, Rihito Kuroda, Shigetoshi Sugawa:
A prototype high-speed CMOS image sensor with 10, 000, 000 fps burst-frame rate and 10, 000 fps continuous-frame rate. Digital Photography 2011: 78760G - 2010
- [c10]Yoshiaki Tashiro, Shun Kawada, Shin Sakai, Shigetoshi Sugawa:
Checker-pattern and shared two pixels LOFIC CMOS image sensors. ASP-DAC 2010: 343-344 - [c9]Takahiro Kohara, Woonghee Lee, Koichi Mizobuchi, Shigetoshi Sugawa:
A CMOS image sensor with 2.0-e- random noise and 110-ke- full well capacity using column source follower readout circuits. ASP-DAC 2010: 345-346 - [c8]Shun Kawada, Shin Sakai, Yoshiaki Tashiro, Shigetoshi Sugawa:
Checkered white-RGB color LOFIC CMOS image sensor. ASP-DAC 2010: 347-348
2000 – 2009
- 2009
- [c7]Shin Sakai, Yoshiaki Tashiro, Nana Akahane, Rihito Kuroda, Koichi Mizobuchi, Shigetoshi Sugawa:
A pixel-shared CMOS image sensor using lateral overflow gate. ESSCIRC 2009: 240-243 - 2008
- [j11]Satoru Adachi, Woonghee Lee, Nana Akahane, Hiromichi Oshikubo, Koichi Mizobuchi, Shigetoshi Sugawa:
A 200-µV/e- CMOS Image Sensor With 100-ke- Full Well Capacity. IEEE J. Solid State Circuits 43(4): 823-830 (2008) - [j10]Noriko Ide, Woonghee Lee, Nana Akahane, Shigetoshi Sugawa:
A Wide DR and Linear Response CMOS Image Sensor With Three Photocurrent Integrations in Photodiodes, Lateral Overflow Capacitors, and Column Capacitors. IEEE J. Solid State Circuits 43(7): 1577-1587 (2008) - [j9]Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi:
Accurate negative bias temperature instability lifetime prediction based on hole injection. Microelectron. Reliab. 48(10): 1649-1654 (2008) - [c6]Nana Akahane, Woonghee Lee, Shigetoshi Sugawa:
An optimum design of the LOFIC CMOS image sensor for high sensitivity, low noise, and high full well capacity. Digital Photography 2008: 681702 - 2007
- [j8]Kazufumi Watanabe, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi:
Examination of degradation mechanism due to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction. Microelectron. Reliab. 47(2-3): 409-418 (2007) - [j7]Koutarou Tanaka, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi:
High quality gate insulator film formation on SiC using by microwave-excited high-density plasma. Microelectron. Reliab. 47(4-5): 786-789 (2007) - [j6]Rihito Kuroda, Akinobu Teramoto, Kazufumi Watanabe, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi:
Circuit level prediction of device performance degradation due to negative bias temperature stress. Microelectron. Reliab. 47(6): 930-936 (2007) - [c5]Roel Pantonial, Md. Ashfaquzzaman Khan, Naoto Miyamoto, Koji Kotani, Shigetoshi Sugawa, Tadahiro Ohmi:
Improving Execution Speed of FPGA using Dynamically Reconfigurable Technique. ASP-DAC 2007: 108-109 - [c4]Noriko Ide, Woonghee Lee, Nana Akahane, Shigetoshi Sugawa:
A Wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors. ESSCIRC 2007: 336-339 - [c3]Naoto Miyamoto, Masahiko Shimakage, Tatsuo Morimoto, Kazuya Kadota, Shigetoshi Sugawa, Tadahiro Ohmi:
A Rapid Prototyping of Real-Time Pattern Generator for Step-and-Scan Lithography Using Digital Micromirror Device. FPT 2007: 305-308 - 2006
- [j5]Nana Akahane, Shigetoshi Sugawa, Satoru Adachi, Kazuya Mori, Toshiyuki Ishiuchi, Koichi Mizobuchi:
A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor. IEEE J. Solid State Circuits 41(4): 851-858 (2006) - [j4]Chuan Jie Zhong, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi:
High quality silicon nitride deposited by Ar/N2/H2/SiH4 high-density and low energy plasma at low temperature. Microelectron. J. 37(1): 44-49 (2006) - [c2]Nana Akahane, Rie Ryuzaki, Satoru Adachi, Koichi Mizobuchi, Shigetoshi Sugawa:
A 200dB Dynamic Range Iris-less CMOS Image Sensor with Lateral Overflow Integration Capacitor using Hybrid Voltage and Current Readout Operation. ISSCC 2006: 1161-1170 - 2003
- [j3]Masanori Fujibayashi, Toshiyuki Nozawa, Takahiro Nakayama, Kenji Mochizuki, Masahiro Konda, Koji Kotani, Shigetoshi Sugawa, Tadahiro Ohmi:
A still-image encoder based on adaptive resolution vector quantization featuring needless calculation elimination architecture. IEEE J. Solid State Circuits 38(5): 726-733 (2003) - [c1]Masanori Fujibayashi, Toshiyuki Nozawa, Takahiro Nakayama, Kenji Mochizuki, Koji Kotani, Shigetoshi Sugawa, Tadahiro Ohmi:
A still image encoder based on adaptive resolution vector quantization employing needless calculation elimination architecture. ASP-DAC 2003: 567-568 - 2001
- [j2]Tadahiro Ohmi, Shigetoshi Sugawa, Koji Kotani, Masaki Hirayama, Akihiro Morimoto:
New paradigm of silicon technology. Proc. IEEE 89(3): 394-412 (2001) - 2000
- [j1]Toshiyuki Nozawa, Masahiro Konda, Masanori Fujibayashi, Makoto Imai, Koji Kotani, Shigetoshi Sugawa, Tadahiro Ohmi:
A parallel vector-quantization processor eliminating redundant calculations for real-time motion picture compression. IEEE J. Solid State Circuits 35(11): 1744-1750 (2000)
Coauthor Index
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