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ORCIDFayçal Djeffal
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2020 – today
- 2023
[c26]Hichem Ferhati, K. Kacha, Adel Bendjerad, Fayçal Djeffal, Abdelhamid Benhaya:
Optical and Electrical Properties of Annealed AZO/Ag/AZO Multilayer Deposited Using RF Sputtering Technique. CCE 2023: 1-5- [c25]Hichem Ferhati, K. Kacha, R. Labchek, K. Dibi, Fayçal Djeffal:
Performance assessment of a new optimized Junctionless SiSn MOSFET. CCE 2023: 1-5 - [c24]A. Maoucha, Fayçal Djeffal, Hichem Ferhati:
Numerical Investigation of a New Double-Absorber Lead-free Perovskite Solar Cell via SCAPS-1D. CCE 2023: 1-5 - [c23]Badreddine Zerroumda, Hichem Ferhati, Fayçal Djeffal, Adel Bendjerad:
A New Gate-Trench Junctionless SiC Power MOSFET: Performance Assessement and Circuit Level Investigation. CCE 2023: 1-5 - [c22]Fayçal Djeffal, Hichem Ferhati:
Structural and Electrical Properties of Ag/SnO2 for Photovoltaic Applications. ICSC 2023: 667-670 - [c21]Hichem Ferhati, Fayçal Djeffal:
Novel SnS Absorber Film Based on Grooves and Au-Nanoparticles for Photovoltaic Applications. ICSC 2023: 943-947 - 2022
- [c20]Badreddine Zerroumda, Fayçal Djeffal, Saïd Benaggoune, Hichem Ferhati:
Investigation of a new power junctionless MOSFET using 2-D numerical simulation. SSD 2022: 566-570 - [c19]Adel Bendjerad, Abdelhamid Benhaya, Hichem Ferhati, F. Smaili, S. Rahmani, Fayçal Djeffal, A. Lahmar:
Magnetic properties of RF sputtered NbO-Ni and NiO-Nb multilayer thin films: Application of Preisach model. SSD 2022: 638-642 - [c18]Fayçal Djeffal, Hichem Ferhati, Abdelhamid Benhaya, Adel Bendjerad:
Enhanced Photoresponse of Ultraviolet Photodetector via RF Sputtered ZnO/a-SiC Heterostructure. SSD 2022: 1039-1043 - [c17]Fayçal Djeffal, Hichem Ferhati:
Numerical Investigation of a New GeSn MIR Phototransistor based on IGZO TFT Platform. CCE 2022: 1-5 - [c16]Fayçal Djeffal, Hichem Ferhati:
New Ge-gate IR Phototransistor based on Doping Engineering Aspect: Photodetection Properties and Circuit Level Investigation. CCE 2022: 1-4 - [c15]Hichem Ferhati, Adel Bendjerad, Fayçal Djeffal, Abdelhamid Benhaya, A. Saidi:
Effects of annealing on the structural and optical properties of sputtered SiC/Ag/SiC multilayer. CCE 2022: 1-4 - 2021
- [c14]Fayçal Djeffal, Hichem Ferhati:
Optimized Graphene Nanoribbon UV Phototransistor Based on ZnO Sensitive Gate for Optical Wireless Communications. CCE 2021: 1-5 - [c13]Hichem Ferhati, Fayçal Djeffal:
Genetic Algorithm-based Approach to Enhance the Performance of Gate Engineered InGaZnO UV Thin-Film Phototransistor. CCE 2021: 1-6 - 2020
- [c12]Hichem Ferhati, Fayçal Djeffal, Toufik Bentrcia:
Novel Infrared phototransistor based on Junctionless TFET design: Numerical Analysis and Performance Assessment. ICIST 2020: 37:1-37:5 - [c11]Toufik Bentrcia, Fayçal Djeffal, Hichem Ferhati:
An ANFIS-based Computation to Study the Degradation-related Ageing effects in Nanoscale GAA-TFETs. ICIST 2020: 38:1-38:5 - [c10]Hichem Ferhati, Fayçal Djeffal, Toufik Bentrcia:
Role of Material Gate Engineering in Improving Gate All Around Junctionless (GAAJL) MOSFET Reliability Against Hot-Carrier Effects. ICM 2020: 1-4
2010 – 2019
- 2018
- [c9]Badreddine Zerroumda, Fayçal Djeffal, Toufik Bentrcia, Hichem Ferhati:
Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications. ICSENT 2018: 35:1-35:5 - [c8]Elasaad Chebaki, Fayçal Djeffal, Toufik Bentrcia, Hichem Ferhati:
Device and Circuit Level Performance Analysis of a New Nanoscale DGJL MOSFET Design Using an Accurate Numerical Computation. ICSENT 2018: 36:1-36:5 - 2017
- [j9]Toufik Bentrcia, Fayçal Djeffal, Elasaad Chebaki:
Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique. IET Circuits Devices Syst. 11(6): 618-623 (2017) - [c7]A. Aouf, Fayçal Djeffal, Fouzi Douak
:
Thermal stability investigation of power GaN HEMT including self-heating effects. ICSC 2017: 451-454 - [c6]Farid Menacer, Abdelmalek Kadri, Fayçal Djeffal, Zohir Dibi:
Modeling and investigation of smart capacitive pressure sensor using artificial neural networks. ICSC 2017: 455-460 - [c5]Hichem Ferhati, Fayçal Djeffal, Abdelhamid Benhaya:
Enhanced performance of ZnO/c-Si solar cell using interface engineering with grooves morphology. ICSC 2017: 461-464 - 2015
- [c4]Hichem Bencherif, Fayçal Djeffal, K. Kacha, Djemai Arar:
Analytical investigation of SiGe solar cell including texture morphology effects. ICSC 2015: 268-273 - [c3]Hichem Ferhati, Fayçal Djeffal, K. Kacha, Djemai Arar:
High efficiency amorphous triple-junction thin-film SiGe solar cells incorporating multi-trench region. ICSC 2015: 274-277 - [c2]Mohammed Meguellati, F. Srairi, Fayçal Djeffal, L. Saidi:
Performance analysis of swimming microrobot using GA, ABC and PSO based-optimization techniques. ICSC 2015: 310-314 - 2013
- [j8]Toufik Bentrcia, Fayçal Djeffal, M. Chahdi:
An analytical two dimensional subthreshold behavior model to study the nanoscale GCGS DG Si MOSFET including interfacial trap effects. Microelectron. Reliab. 53(4): 520-527 (2013) - 2012
- [j7]N. Lakhdar, Fayçal Djeffal:
New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime. Microelectron. Reliab. 52(6): 958-963 (2012) - 2011
- [j6]Fayçal Djeffal, Toufik Bendib:
Multi-objective genetic algorithms based approach to optimize the electrical performances of the gate stack double gate (GSDG) MOSFET. Microelectron. J. 42(5): 661-666 (2011) - [j5]Fayçal Djeffal, Toufik Bendib, Mohamed Amir Abdi:
A two-dimensional semi-analytical analysis of the subthreshold-swing behavior including free carriers and interfacial traps effects for nanoscale double-gate MOSFETs. Microelectron. J. 42(12): 1391-1395 (2011) - [j4]Fayçal Djeffal, Toufik Bentrcia, Mohamed Amir Abdi, Toufik Bendib:
Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects. Microelectron. Reliab. 51(3): 550-555 (2011)
2000 – 2009
- 2009
- [j3]Fayçal Djeffal, Djemai Arar, N. Lakhdar, Toufik Bendib, Zohir Dibi, M. Chahdi:
An approach based on particle swarm computation to study the electron mobility in wurtzite GaN. Microelectron. J. 40(2): 357-359 (2009) - [j2]Fayçal Djeffal, Z. Ghoggali, Zohir Dibi, N. Lakhdar:
Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges. Microelectron. Reliab. 49(4): 377-381 (2009) - [c1]Mohamed Amir Abdi, Fayçal Djeffal, Mohammed Meguellati, Djemai Arar:
Two-dimensional analytical threshold voltage model for nanoscale graded channel gate stack DG MOSFETs. ICECS 2009: 892-895 - 2008
- [j1]Ali Cheknane, Hikmat S. Hilal, Fayçal Djeffal, Boumediène Benyoucef, Jean-Pierre Charles:
An equivalent circuit approach to organic solar cell modelling. Microelectron. J. 39(10): 1173-1180 (2008)
Coauthor Index
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