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2020 – today
- 2023
[j11]Xinhao Li
, Huilong Zhu, Zhenzhen Kong, Qi Wang, Yongkui Zhang, Zhenhua Wu:
On the SRAM with comb-shaped nano FETs advancing to 3 nm node and beyond. Microelectron. J. 138: 105842 (2023)- 2022
- [c2]Huilong Zhu, Jing Zhang, Li Hu, Chenghao Li, Maomao Shan, Qiyu Duan:
Data Augmentation Algorithm Based on Local Dynamic Transformation. AIIPCC 2022: 398-404 - 2021
- [j10]Weixing Huang, Huilong Zhu, Yongkui Zhang, Zhenhua Wu, Kunpeng Jia, Xiaogen Yin, Yangyang Li, Chen Li, Xuezheng Ai, Qiang Huo, Junfeng Li:
Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits. Microelectron. J. 114: 105110 (2021) - [j9]Jiali Huo, Weixing Huang, Fan Zhang, Shengli Zhang, Weizhuo Gan, Qiang Huo, Yuwei Cai, Qingzhu Zhang, Yongliang Li, Huilong Zhu, Huaxiang Yin, Zhenhua Wu:
Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit. Microelectron. J. 116: 105196 (2021) - 2020
- [j8]Hong Yang, Luwei Qi, Yanbo Zhang, Bo Tang, Qianqian Liu, Hao Xu, Xueli Ma, Xiaolei Wang, Yongliang Li, Huaxiang Yin, Junfeng Li, Huilong Zhu, Chao Zhao, Wenwu Wang, Tianchun Ye:
Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks. Sci. China Inf. Sci. 63(2): 129403 (2020) - [j7]Huilong Zhu, Dawei Bi, Xin Xie, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou:
Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET. IEICE Electron. Express 17(7): 20200001 (2020) - [i1]Weixing Huang, Huilong Zhu, Kunpeng Jia, Zhenhua Wu, Xiaogen Yin, Qiang Huo, Yongkui Zhang:
The Investigation of Negative Capacitance Vertical Nanowire FETs Based on SPICE Model at Device-Circuit Level. CoRR abs/2002.03726 (2020)
2010 – 2019
- 2019
- [j6]Xin Xie, Huilong Zhu, Mengying Zhang, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou:
Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer. IEICE Electron. Express 16(21): 20190454 (2019) - 2018
- [j5]Dianpeng Lin, Yiran Xu, Xiaonian Liu, Wenyi Zhu, Lihua Dai, Mengying Zhang, Xiaoyun Li, Xin Xie, Jianwei Jiang, Huilong Zhu, Zhengxuan Zhang, Shichang Zou:
A novel highly reliable and low-power radiation hardened SRAM bit-cell design. IEICE Electron. Express 15(3): 20171129 (2018) - [j4]Dianpeng Lin, Yiran Xu, Xiaoyun Li, Xin Xie, Jianwei Jiang, Jiangchuan Ren, Huilong Zhu, Zhengxuan Zhang, Shichang Zou:
A novel SEU tolerant memory cell for space applications. IEICE Electron. Express 15(17): 20180656 (2018) - [j3]Dianpeng Lin, Yiran Xu, Xiaoyun Li, Xin Xie, Jianwei Jiang, Jiangchuan Ren, Huilong Zhu, Zhengxuan Zhang, Shichang Zou:
A novel self-recoverable and triple nodes upset resilience DICE latch. IEICE Electron. Express 15(19): 20180753 (2018) - 2017
- [j2]Yongbo Liu, Zhengyong Zhu, Huilong Zhu, Guangxing Wan, Junfeng Li, Chao Zhao:
Charge pumping test technique using CMOS ring oscillator on leakage issue. Microelectron. J. 68: 40-43 (2017) - 2016
- [j1]Weichun Luo, Hong Yang, Wenwu Wang, Yefeng Xu, Bo Tang, Shangqing Ren, Hao Xu, Yanrong Wang, Luwei Qi, Jiang Yan, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye:
Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer. Microelectron. Reliab. 62: 70-73 (2016) - 2015
- [c1]Guangxing Wan, Tianli Duan, Shuxiang Zhang, Lingli Jiang, Bo Tang, Chao Zhao, Huilong Zhu, Hongyu Yu:
Overshoot stress impact on HfO2 high-κ layer dynamic SILC. ASICON 2015: 1-4
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