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ORCIDAugusto Tazzoli
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2010 – 2019
- 2013
[c3]Jabeom Koo
, Augusto Tazzoli, Jeronimo Segovai-Fernandez, Gianluca Piazza, Brian P. Otis:
A -173 dBc/Hz @ 1 MHz offset Colpitts oscillator using AlN contour-mode MEMS resonator. CICC 2013: 1-4- [c2]Vehbi Calayir, Tom Jackson, Augusto Tazzoli, Gianluca Piazza, Larry T. Pileggi:
Neurocomputing and associative memories based on ovenized aluminum nitride resonators. IJCNN 2013: 1-8 - 2012
- [j12]Anna Persano, Augusto Tazzoli, Paola Farinelli, Gaudenzio Meneghesso, Pietro Siciliano, Fabio Quaranta:
K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability. Microelectron. Reliab. 52(9-10): 2245-2249 (2012) - 2011
- [j11]Augusto Tazzoli, Isabella Rossetto, Enrico Zanoni, Dai Yufeng, Tiziana Tomasi, Gaudenzio Meneghesso:
ESD sensitivity of a GaAs MMIC microwave power amplifier. Microelectron. Reliab. 51(9-11): 1602-1607 (2011) - [j10]Jacopo Iannacci, Alessandro Faes, A. Repchankova, Augusto Tazzoli, Gaudenzio Meneghesso:
An active heat-based restoring mechanism for improving the reliability of RF-MEMS switches. Microelectron. Reliab. 51(9-11): 1869-1873 (2011) - [c1]Augusto Tazzoli, Matteo Rinaldi, Chengjie Zuo, Nipun Sinha, Jan Van der Spiegel, Gianluca Piazza:
Aluminum Nitride reconfigurable RF-MEMS front-ends. ASICON 2011: 1046-1049 - 2010
- [j9]Augusto Tazzoli, Martina Cordoni, Paolo Colombo, C. Bergonzoni, Gaudenzio Meneghesso:
Time-To-Latch-Up investigation of SCR devices as ESD protection structures on 65 nm technology platform. Microelectron. Reliab. 50(9-11): 1373-1378 (2010) - [j8]Jacopo Iannacci, A. Repchankova, Alessandro Faes, Augusto Tazzoli, Gaudenzio Meneghesso, Gian-Franco Dalla Betta:
Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism. Microelectron. Reliab. 50(9-11): 1599-1603 (2010) - [j7]Augusto Tazzoli, Marco Barbato, F. Mattiuzzo, V. Ritrovato, Gaudenzio Meneghesso:
Study of the actuation speed, bounces occurrences, and contact reliability of ohmic RF-MEMS switches. Microelectron. Reliab. 50(9-11): 1604-1608 (2010)
2000 – 2009
- 2009
- [j6]Augusto Tazzoli, Lorenzo Cerati, A. Andreini, Gaudenzio Meneghesso:
Breakdown characterization of gate oxides in 35 and 70 Å BCD8 smart power technology. Microelectron. Reliab. 49(9-11): 1111-1115 (2009) - [j5]Nicolo Ronchi, Franco Zanon, Antonio Stocco, Augusto Tazzoli, Enrico Zanoni, Gaudenzio Meneghesso:
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test. Microelectron. Reliab. 49(9-11): 1207-1210 (2009) - 2008
- [j4]Francesca Danesin, Augusto Tazzoli, Franco Zanon, Gaudenzio Meneghesso, Enrico Zanoni, Antonio Cetronio, Claudio Lanzieri, Simone Lavanga, Marco Peroni, Paolo Romanini:
Thermal storage effects on AlGaN/GaN HEMT. Microelectron. Reliab. 48(8-9): 1361-1365 (2008) - [j3]Augusto Tazzoli, Gaudenzio Meneghesso, Franco Zanon, Francesca Danesin, Enrico Zanoni, Philippe Bove, R. Langer, J. Thorpe:
Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields. Microelectron. Reliab. 48(8-9): 1370-1374 (2008) - 2007
- [j2]Augusto Tazzoli, Fabio Alessio Marino, Martina Cordoni, A. Benvenuti, Paolo Colombo, Enrico Zanoni, Gaudenzio Meneghesso:
Holding voltage investigation of advanced SCR-based protection structures for CMOS technology. Microelectron. Reliab. 47(9-11): 1444-1449 (2007) - 2005
- [j1]Augusto Tazzoli, Gaudenzio Meneghesso, Enrico Zanoni:
A novel fast and versatile temperature measurement system for LDMOS transistors. Microelectron. Reliab. 45(9-11): 1742-1745 (2005)
Coauthor Index
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