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ORCIDXiaohua Ma 0001
Person information
- affiliation (PhD 2007): Xidian University, School of Microelectronics, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, Xi'an, China
Other persons with the same name
- Xiaohua Ma (aka: Xiao-Hua Ma, Xiao Hua Ma) — disambiguation page
- Xiaohua Ma 0002
![[0000-0002-5364-4286]](https://dblp.dagstuhl.de/img/orcid-mark.12x12.png "0000-0002-5364-4286")
— Changsha University of Science and Technology, School of Mathematics and Statistics, China
2020 – today
- 2025
[j20]Wen-Liang Liu, Jing-Ya Deng, Chupeng Yi, Zi-Yue Zhao, Ting Feng, Xin Liu, Yang Lu, Xiao-Hua Ma, Yue Hao:
Class-F-1 GaN Power Amplifier Integrated Active Antenna With Increased Efficiency for Wireless Power Transmission Applications. IEEE Internet Things J. 12(3): 2486-2497 (2025)- [j19]Xuan Huang, Lin-An Yang, Jian-Hua Zhou, Xin-Yi Wang, Xiao-Hua Ma, Yue Hao:
Study of GaN Schottky barrier IMPATT diodes with a self-aligned field plate for terahertz applications. Microelectron. J. 157: 106572 (2025) - [j18]Xin Liu, Huanhuan Jia, Yang Lu, Ziyue Zhao, Chupeng Yi, Ting Feng, Xiaohua Ma, Wenhua Chen, Zhenghe Feng, Fadhel M. Ghannouchi:
Linearization of Fully-Connected Hybrid Beamforming Transmitters Using Analytical Multi-Input Models for Millimeter-Wave Communications. IEEE Trans. Commun. 73(4): 2680-2694 (2025) - 2024
- [j17]Sirui An, Minhan Mi, Pengfei Wang, Sijia Liu, Qing Zhu, Meng Zhang, Zhihong Chen, Jielong Liu, Siyin Guo, Can Gong, Xiaohua Ma, Yue Hao:
A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness. Sci. China Inf. Sci. 67(1) (2024) - [j16]Qing Zhu, Zhenni Wang, Yuxiang Wei, Ling Yang, Xiaoli Lu, Jiejie Zhu, Peng Zhong, Yimin Lei, Xiaohua Ma:
Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias. Sci. China Inf. Sci. 67(1) (2024) - [j15]Chunzhou Shi, Ling Yang, Meng Zhang, Hao Lu, Mei Wu, Bin Hou, Xuerui Niu, Qian Yu, Wenliang Liu, Wenze Gao, Xiaohua Ma, Yue Hao:
Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure. Sci. China Inf. Sci. 67(4) (2024) - [j14]Wen Hong, Chao Zhang, Fang Zhang, Xuefeng Zheng, Xiaohua Ma, Yue Hao:
Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate. Sci. China Inf. Sci. 67(5) (2024) - [j13]Qingyuan Chang, Bin Hou, Ling Yang, Mei Wu, Meng Zhang, Hao Lu, Fuchun Jia, Xuerui Niu, Chunzhou Shi, Jiale Du, Mao Jia, Qian Yu, Shiming Li, Youjun Zhu, Xiaohua Ma, Yue Hao:
High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation. Sci. China Inf. Sci. 67(12) (2024) - [j12]Yahui Feng, Hongxia Guo, Wuying Ma, Jiawen Hu, Xiaoping Ouyang, Jinxin Zhang, Fengqi Zhang, Hong Zhang, Ruxue Bai, Xiaohua Ma, Yue Hao:
Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures. Microelectron. J. 144: 106058 (2024) - [j11]Xin-Yi Wang, Lin-An Yang, Xuan Huang, Jian-Hua Zhou, Xiao-Hua Ma, Yue Hao:
Low-high-low doped Ga2O3 Schottky barrier IMPATT diodes on various crystal orientations for terahertz applications. Microelectron. J. 151: 106350 (2024) - [c8]Min Zhou, Hong Zhou, Mengwei Si, Guangjie Gao, Xiaojin Chen, Xiaoxiao Zhu, Kui Dang, Peijun Ma, Xiaohua Ma, Xuefeng Zheng, Zhihong Liu, Jincheng Zhang, Yuhao Zhang, Yue Hao:
71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure. VLSI Technology and Circuits 2024: 1-2 - 2023
- [j10]Yilin Chen, Qing Zhu, Jiejie Zhu, Minhan Mi, Meng Zhang, Yuwei Zhou, Ziyue Zhao, Xiaohua Ma, Yue Hao:
Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light. Sci. China Inf. Sci. 66(2) (2023) - [c7]Zhenkai Ding, Chupeng Yi, Yang Lu, Xiaohua Ma:
A Ka-band Wideband Power Synthesis Power Amplifier MMIC Utilizing Advanced 0.15μm GaN HEMT Technology. ICNCC 2023: 162-167 - [c6]Jielong Liu, Chang Wu, Tao Guo, Kai Wang, Chengcheng Li, An Liu, Rui Zhou, Zhen Huang, Jiayan Wu, Minhan Mi, Xiaohua Ma:
Millimeter-Wave AlGaN/GaN MIS-HEMTs with Multiple T-Gate Technology. ICTA 2023: 1-2 - 2022
- [j9]Siyu Liu, Xiaohua Ma, Jiejie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Yilin Chen, Qing Zhu, Ling Yang, Yue Hao:
Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. Sci. China Inf. Sci. 65(10) (2022) - [j8]Yuchen Wang, Xiaohua Ma, Yang Lu, Bochao Zhao, Ziyue Zhao, Chupeng Yi, Ling Yang, Jiangyi Shi, Yue Hao:
A Broadband Amplifier With Flat Bandwidth for Modulator and Measurement Driver Circuits. IEEE Trans. Instrum. Meas. 71: 1-9 (2022) - [c5]Hao Lu, Likun Zhou, Longge Deng, Ling Yang, Bin Hou, Xiaohua Ma, Yue Hao:
First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications. ICTA 2022: 30-31 - [c4]Pengfei Wang, Minhan Mi, Sirui An, Xiang Du, Xiaohua Ma, Yue Hao:
A Novel Concept of using Double Threshold Voltage Coupling to Improve the linearity of AlGaN/GaN HEMTs for millimeter-wave applications. ICTA 2022: 114-115 - [i1]Shuiying Xiang, Yuechun Shi, Xingxing Guo, Yahui Zhang, Hongji Wang, Dianzhuang Zheng, Ziwei Song, Yanan Han, Shuang Gao, Shihao Zhao, Biling Gu, Hailing Wang, Xiaojun Zhu, Lianping Hou, Xiangfei Chen, Wanhua Zheng, Xiaohua Ma, Yue Hao:
Hardware-algorithm collaborative computing with photonic spiking neuron chip based on integrated Fabry-Pérot laser with saturable absorber. CoRR abs/2204.08362 (2022) - 2021
- [j7]Yue Hao, Shuiying Xiang, Genquan Han, Jincheng Zhang, Xiaohua Ma, Zhangming Zhu, Xingxing Guo, Yahui Zhang, Yanan Han, Ziwei Song, Yan Liu, Ling Yang, Hong Zhou, Jiangyi Shi, Wei Zhang, Min Xu, Weisheng Zhao, Biao Pan, Yangqi Huang, Qi Liu, Yimao Cai, Jian Zhu, Xin Ou, Tiangui You, Huaqiang Wu, Bin Gao, Zhiyong Zhang, Guoping Guo, Yonghua Chen, Yong Liu, Xiangfei Chen, Chunlai Xue, Xingjun Wang, Lixia Zhao, Xihua Zou, Lianshan Yan, Ming Li:
Recent progress of integrated circuits and optoelectronic chips. Sci. China Inf. Sci. 64(10) (2021) - [c3]Hao Lu, Xiaohua Ma, Bin Hou, Ling Yang, Teng Huo, Zeyan Si, Yue Hao:
Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier. ICTA 2021: 78-79 - 2020
- [j6]Qing Zhu, Xiaohua Ma, Bin Hou, Mei Wu, Jiejie Zhu, Ling Yang, Meng Zhang, Yue Hao:
Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature. IEEE Access 8: 35520-35528 (2020) - [c2]Yingzhe Wang, Xuefeng Zheng, Jiaduo Zhu, Shengrui Xu, Xiaohua Ma, Jincheng Zhang, Yue Hao, Linlin Xu, Jiangnan Dai, Peixian Li:
Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress. IRPS 2020: 1-4
2010 – 2019
- 2018
- [c1]Jiejie Zhu, Bin Hou, Lixiang Chen, Qing Zhu, Ling Yang, Xiaowei Zhou, Peng Zhang, Xiaohua Ma, Yue Hao:
Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs. IRPS 2018: 1 - 2016
- [j5]Bochao Zhao, Peijun Ma, Yang Lu, Jiaxin Zheng, Hengshuang Zhang, Zuo-Chen Shi, Xiaohua Ma, Yue Hao:
A novel graphical method for dual-frequency two sections transformer. IEICE Electron. Express 13(12): 20160509 (2016) - 2015
- [j4]Bochao Zhao, Xiaohua Ma, Yang Lu, Jiaxin Zheng, Wenzhe Han, Honghe Zhang, Yanlong Zhang, Yue Hao:
A 5-8 GHz wideband 100 W internally matched GaN power amplifier. IEICE Electron. Express 12(6): 20150172 (2015) - [j3]Minhan Mi, Yunlong He, Bin Hou, Meng Zhang, Zuo-Chen Shi, Xiaohua Ma, Peixian Li, Yue Hao:
The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT. IEICE Electron. Express 12(24): 20150943 (2015) - 2014
- [j2]Peng Zhang, Yuan Wang, Xing Zhang, Xiaohua Ma, Yue Hao:
Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp. Sci. China Inf. Sci. 57(2): 1-6 (2014) - [j1]Wei-Wei Chen, Xiaohua Ma, Bin Hou, Sheng-Lei Zhao, Jiejie Zhu, Jincheng Zhang, Yue Hao:
Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress. Microelectron. Reliab. 54(6-7): 1293-1298 (2014)
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