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Susanna Reggiani

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Journal Articles

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2023
[j10]
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  - journals/access/BalestraEGR23
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Luigi Balestra, Franco Ercolano, Elena Gnani, Susanna Reggiani:
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE. IEEE Access 11: 6293-6298 (2023)
2018
[j9]
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Davide Cornigli, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, Davide Fabiani, Dhanoop Varghese, Enis Tuncer, S. Krishnan, Luu Nguyen:
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture. Microelectron. Reliab. 88-90: 752-755 (2018)
[j8]
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Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna:
TCAD investigation on hot-electron injection in new-generation technologies. Microelectron. Reliab. 88-90: 1090-1093 (2018)
[j7]
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Susanna Reggiani, Luigi Balestra, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, J. Dobrzynska, J. Vobecký, C. Tosi:
TCAD study of DLC coatings for large-area high-power diodes. Microelectron. Reliab. 88-90: 1094-1097 (2018)
2017
[j6]
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Andrea Natale Tallarico, Susanna Reggiani, Paolo Magnone, Giuseppe Croce, Riccardo Depetro, P. Gattari, Enrico Sangiorgi, Claudio Fiegna:
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide. Microelectron. Reliab. 76-77: 475-479 (2017)
2013
[j5]
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Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs. Microelectron. J. 44(1): 20-25 (2013)
2001
[j4]
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  - journals/vlsi/BertoniBBJR01
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Alberto Bertoni, Paolo Bordone, Rossella Brunetti, Carlo Jacoboni, Susanna Reggiani:
Numerical Simulation of Quantum Logic Gates Based on Quantum Wires. VLSI Design 13(1-4): 97-102 (2001)
[j3]
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Elena Gnani, Susanna Reggiani, Renato Colle, Massimo Rudan:
Calculation of Transport Parameters of SiO₂ Polymorphs. VLSI Design 13(1-4): 311-315 (2001)
2000
[j2]
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  - journals/vlsi/ReggianiVCRB00
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Susanna Reggiani, Marina Valdinoci, Luigi Colalongo, Massimo Rudan, Giorgio Baccarani:
An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices. VLSI Design 10(4): 467-483 (2000)
1998
[j1]
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  - journals/vlsi/ReggianiVR98
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Susanna Reggiani, Maria Cristina Vecchi, Massimo Rudan:
Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE. VLSI Design 8(1-4): 361-365 (1998)

Conference and Workshop Papers

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2023
[c23]
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  - conf/irps/ZunarelliBRSDB23
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Laura Zunarelli, Luigi Balestra, Susanna Reggiani, Raj Sankaralingam, Mariano Dissegna, Gianluca Boselli:
TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection. IRPS 2023: 1-6
2022
[c22]
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Laura Zunarelli, Susanna Reggiani, Elena Gnani, Raj Sankaralingam, Mariano Dissegna, Gianluca Boselli:
TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells. IRPS 2022: 6
2020
[c21]
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  - conf/irps/TallaricoRDCSF20
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Andrea Natale Tallarico, Susanna Reggiani, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna:
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors. IRPS 2020: 1-5
2019
[c20]
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  - conf/essderc/CornigliTRFSSVC19
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Davide Cornigli, Andrea Natale Tallarico, Susanna Reggiani, Claudio Fiegna, Enrico Sangiorgi, Luis Sanchez, Carlos Valdivieso, Giuseppe Consentino, Felice Crupi:
Characterization and Modeling of BTI in SiC MOSFETs. ESSDERC 2019: 82-85
[c19]
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Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, Antonio Molfese, Stefano Manzini:
TCAD predictions of hot-electron injection in p-type LDMOS transistors. ESSDERC 2019: 86-89
[c18]
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  - conf/essderc/CarapezziRGG19
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Stefania Carapezzi, Susanna Reggiani, Elena Gnani, Antonio Gnudi:
On the electron mobility of strained InGaAs channel MOSFETs. ESSDERC 2019: 266-269
2018
[c17]
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  - conf/essderc/CarapezziERGRHG18
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Stefania Carapezzi, Sebastian Eberle, Susanna Reggiani, Elena Gnani, Cosmin Roman, Christofer Hierold, Antonio Gnudi:
3D TCAD modeling of NO2CNT FET sensors. ESSDERC 2018: 222-225
2016
[c16]
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  - conf/essderc/VisciarelliGGR16
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Michele Visciarelli, Antonio Gnudi, Elena Gnani, Susanna Reggiani:
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps. ESSDERC 2016: 180-183
[c15]
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  - conf/essderc/RauMCEGGKLOPRSS16
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Martin Rau, Troels Markussen, Enrico Caruso, David Esseni, Elena Gnani, Antonio Gnudi, Petr A. Khomyakov, Mathieu Luisier, Patrik Osgnach, Pierpaolo Palestri, Susanna Reggiani, Andreas Schenk, Luca Selmi, Kurt Stokbro:
Performance study of strained III-V materials for ultra-thin body transistor applications. ESSDERC 2016: 184-187
[c14]
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Stefania Carapezzi, Enrico Caruso, Antonio Gnudi, Susanna Reggiani, Elena Gnani:
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections. ESSDERC 2016: 416-419
2015
[c13]
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  - conf/esscirc/BaccaraniBGGR15
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Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani:
Theoretical analyses and modeling for nanoelectronics. ESSCIRC 2015: 4-9
[c12]
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Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani:
Theoretical analyses and modeling for nanoelectronics. ESSDERC 2015: 4-9
2014
[c11]
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  - conf/essderc/VillaniGGRB14
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Federica Villani, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs. ESSDERC 2014: 262-265
[c10]
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  - conf/essderc/LecceGGGRB14
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Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani:
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. ESSDERC 2014: 313-316
[c9]
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  - conf/essderc/ImperialeRGGBND14
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Ilaria Imperiale, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Luu Nguyen, Marie Denison:
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime. ESSDERC 2014: 325-328
[c8]
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  - conf/essderc/MontiRBGGBPCTVW14
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Federico Monti, Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Dhanoop Varghese, Rick Wise:
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions. ESSDERC 2014: 333-336
2013
[c7]
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  - conf/essderc/BaravelliGGGRB13
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Emanuele Baravelli, Elena Gnani, Roberto Grassi, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platform. ESSDERC 2013: 69-72
[c6]
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  - conf/essderc/BeneventiGGRB13
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Giovanni Betti Beneventi, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty. ESSDERC 2013: 73-76
[c5]
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  - conf/essderc/MaioranoGGRB13
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Pasquale Maiorano, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Gate stack optimization to minimize power consumption in super-lattice fets. ESSDERC 2013: 81-84
[c4]
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  - conf/essderc/ReggianiGGBPWCTD13
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Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Rick Wise, Ming-Yeh Chuang, Weidong Tian, Marie Denison:
Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited). ESSDERC 2013: 91-94
[c3]
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  - conf/essderc/LecceGGGRB13
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Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani:
DC and small-signal numerical simulation of graphene base transistor for terahertz operation. ESSDERC 2013: 314-317
2012
[c2]
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  - conf/essderc/GnaniRGB12
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Elena Gnani, Susanna Reggiani, Antonio Gnudi, Giorgio Baccarani:
Drain-conductance optimization in nanowire TFETs. ESSDERC 2012: 105-108
[c1]
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  - conf/essderc/ReggianiBGGPCTW12
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Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Rick Wise:
TCAD degradation modeling for LDMOS transistors. ESSDERC 2012: 185-188

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