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Joohwan Cho

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Journal Articles

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2023
[j3]
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Myeong-Jae Park, Jinhyung Lee, Kyungjun Cho, Ji Hwan Park, Junil Moon, Sung-Hak Lee, Tae-Kyun Kim, Sanghoon Oh, Seokwoo Choi, Yongsuk Choi, Ho Sung Cho, Tae-Sik Yun, Young Jun Koo, Jae-Seung Lee, Byung Kuk Yoon, Young Jun Park, Sangmuk Oh, Chang Kwon Lee, Seong-Hee Lee, Hyun-Woo Kim, Yucheon Ju, Seung-Kyun Lim, Kyo Yun Lee, Sang-Hoon Lee, Woo Sung We, Seungchan Kim, Seung Min Yang, Keonho Lee, In-Keun Kim, Younghyun Jeon, Jae-Hyung Park, Jong Chan Yun, Seonyeol Kim, Dong-Yeol Lee, Su-Hyun Oh, Junghyun Shin, Yeonho Lee, Jieun Jang, Joohwan Cho:
A 192-Gb 12-High 896-GB/s HBM3 DRAM With a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization. IEEE J. Solid State Circuits 58(1): 256-269 (2023)
[j2]
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Dae-Han Kwon, Seongju Lee, Kyuyoung Kim, Sanghoon Oh, Joonhong Park, Gimoon Hong, Dongyoon Ka, Kyu-Dong Hwang, Jeongje Park, Kyeong Pil Kang, Jungyeon Kim, Junyeol Jeon, Nahsung Kim, Yongkee Kwon, Kornijcuk Vladimir, Woojae Shin, Jongsoon Won, Minkyu Lee, Hyunha Joo, Haerang Choi, Guhyun Kim, Byeongju An, Jaewook Lee, Donguc Ko, Younggun Jun, Ilwoong Kim, Choungki Song, Ilkon Kim, Chanwook Park, Seho Kim, Chunseok Jeong, Euicheol Lim, Dongkyun Kim, Jieun Jang, Il Park, Junhyun Chun, Joohwan Cho:
A 1ynm 1.25V 8Gb 16Gb/s/Pin GDDR6-Based Accelerator-in-Memory Supporting 1TFLOPS MAC Operation and Various Activation Functions for Deep Learning Application. IEEE J. Solid State Circuits 58(1): 291-302 (2023)
2015
[j1]
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Keunsoo Song, Sangkwon Lee, Dongkyun Kim, Youngbo Shim, Sangil Park, Bokrim Ko, Duckhwa Hong, Yongsuk Joo, Wooyoung Lee, Yongdeok Cho, Wooyeol Shin, Jaewoong Yun, Hyengouk Lee, Jeonghun Lee, Eunryeong Lee, Namkyu Jang, Jaemo Yang, Haekang Jung, Joohwan Cho, Hyeongon Kim, Jinkook Kim:
A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth Improvement Techniques. IEEE J. Solid State Circuits 50(8): 1945-1959 (2015)

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2024
[c8]
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Jaehyeok Yang, Hyeongjun Ko, Kyunghoon Kim, Hyunsu Park, Jihwan Park, Ji-Hyo Kang, Jin-Youp Cha, Seongjin Kim, Youngtaek Kim, Minsoo Park, Gangsik Lee, Keonho Lee, Sanghoon Lee, Gyunam Jeon, Sera Jeong, Yongsuk Joo, Jaehoon Cha, Seonwoo Hwang, Boram Kim, Sang-Yeon Byeon, Sungkwon Lee, Hyeonyeol Park, Joohwan Cho, Jonghwan Kim:
13.1 A 35.4Gb/s/pin 16Gb GDDR7 with a Low-Power Clocking Architecture and PAM3 IO Circuitry. ISSCC 2024: 232-234
[c7]
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Jinhyung Lee, Kyungjun Cho, Chang Kwon Lee, Yeonho Lee, Jae-Hyung Park, Su-Hyun Oh, Yucheon Ju, Chunseok Jeong, Ho Sung Cho, Jaeseung Lee, Tae-Sik Yun, Jin Hee Cho, Sangmuk Oh, Junil Moon, Young-Jun Park, Hong-Seok Choi, In-Keun Kim, Seung Min Yang, Sun-Yeol Kim, Jaemin Jang, Jinwook Kim, Seong-Hee Lee, Younghyun Jeon, Juhyung Park, Tae-Kyun Kim, Dongyoon Ka, Sanghoon Oh, Jinse Kim, Junyeol Jeon, Seonhong Kim, Kyeong Tae Kim, Taeho Kim, Hyeonjin Yang, Dongju Yang, Minseop Lee, Heewoong Song, Dongwook Jang, Junghyun Shin, Hyunsik Kim, Chang-Ki Baek, Hajun Jeong, Jongchan Yoon, Seung-Kyun Lim, Kyo Yun Lee, Young Jun Koo, Myeong-Jae Park, Joohwan Cho, Jonghwan Kim:
13.4 A 48GB 16-High 1280GB/s HBM3E DRAM with All-Around Power TSV and a 6-Phase RDQS Scheme for TSV Area Optimization. ISSCC 2024: 238-240
[c6]
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Yangho Seo, Jihee Choi, Sunki Cho, Hyunwook Han, Wonjong Kim, Gyeongha Ryu, Jungil Ahn, Younga Cho, Sungphil Choi, Seohee Lee, Wooju Lee, Chaehyuk Lee, Kiup Kim, Seongseop Lee, Sangbeom Park, Minjun Choi, Sungwoo Lee, Mino Kim, Taekyun Shin, Hyeongsoo Jeong, Hyunseung Kim, Houk Song, Yunsuk Hong, Seokju Yoon, Giwook Park, Hokeun You, Changkyu Choi, Hae-Kang Jung, Joohwan Cho, Jonghwan Kim:
13.8 A 1a-nm 1.05V 10.5Gb/s/pin 16Gb LPDDR5 Turbo DRAM with WCK Correction Strategy, a Voltage-Offset-Calibrated Receiver and Parasitic Capacitance Reduction. ISSCC 2024: 246-248
2023
[c5]
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Woongrae Kim, Chulmoon Jung, Seong Nyuh Yoo, Duckhwa Hong, Jeongjin Hwang, Jungmin Yoon, Oh-Yong Jung, Joonwoo Choi, Sanga Hyun, Mankeun Kang, Sangho Lee, Dohong Kim, Sanghyun Ku, Donhyun Choi, Nogeun Joo, Sangwoo Yoon, Junseok Noh, Byeongyong Go, Cheolhoe Kim, Sunil Hwang, Mihyun Hwang, Seol-Min Yi, Hyungmin Kim, Sanghyuk Heo, Yeonsu Jang, Kyoungchul Jang, Shinho Chu, Yoonna Oh, Kwidong Kim, Junghyun Kim, Soohwan Kim, Jeongtae Hwang, Sangil Park, Junphyo Lee, In-Chul Jeong, Joohwan Cho, Jonghwan Kim:
A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking, Refresh-Management Functionality, Per-Row Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for Security and Reliability Enhancement. ISSCC 2023: 414-415
2022
[c4]
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Seong Ju Lee, Kyu-Young Kim, Sanghoon Oh, Joonhong Park, Gimoon Hong, Dong Yoon Ka, Kyu-Dong Hwang, Jeongje Park, Kyeong Pil Kang, Jungyeon Kim, Junyeol Jeon, Nahsung Kim, Yongkee Kwon, Kornijcuk Vladimir, Woojae Shin, Jongsoon Won, Minkyu Lee, Hyunha Joo, Haerang Choi, Jaewook Lee, Donguc Ko, Younggun Jun, Keewon Cho, Ilwoong Kim, Choungki Song, Chunseok Jeong, Dae-Han Kwon, Jieun Jang, Il Park, Junhyun Chun, Joohwan Cho:
A 1ynm 1.25V 8Gb, 16Gb/s/pin GDDR6-based Accelerator-in-Memory supporting 1TFLOPS MAC Operation and Various Activation Functions for Deep-Learning Applications. ISSCC 2022: 1-3
[c3]
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Myeong-Jae Park, Ho Sung Cho, Tae-Sik Yun, Sangjin Byeon, Young Jun Koo, Sang-Sic Yoon, Dong-Uk Lee, Seokwoo Choi, Ji Hwan Park, Jinhyung Lee, Kyungjun Cho, Junil Moon, Byung Kuk Yoon, Young Jun Park, Sangmuk Oh, Chang Kwon Lee, Tae-Kyun Kim, Seong-Hee Lee, Hyun-Woo Kim, Yucheon Ju, Seung-Kyun Lim, Seung Geun Baek, Kyo Yun Lee, Sang Hun Lee, Woo Sung We, Seungchan Kim, Yongseok Choi, Seong-Hak Lee, Seung Min Yang, Gunho Lee, In-Keun Kim, Younghyun Jeon, Jae-Hyung Park, Jong Chan Yun, Chanhee Park, Sun-Yeol Kim, Sungjin Kim, Dong-Yeol Lee, Su-Hyun Oh, Taejin Hwang, Junghyun Shin, Yunho Lee, Hyunsik Kim, Jaeseung Lee, Youngdo Hur, Sangkwon Lee, Jieun Jang, Junhyun Chun, Joohwan Cho:
A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization. ISSCC 2022: 444-446
2018
[c2]
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Kyu-Dong Hwang, Boram Kim, Sang-Yeon Byeon, Kyu-Young Kim, Dae-Han Kwon, Hyun-Bae Lee, Geun-Il Lee, Sang-Sic Yoon, Jin-Youp Cha, Soo-Young Jang, Seung-Hun Lee, Yongsuk Joo, Gang-Sik Lee, Sung-Soo Xi, Soo-Bin Lim, Kyung-Ho Chu, Joohwan Cho, Junhyun Chun, Jonghoon Oh, Jinkook Kim, Seok Hee Lee:
A 16Gb/s/pin 8Gb GDDR6 DRAM with bandwidth extension techniques for high-speed applications. ISSCC 2018: 210-212
2014
[c1]
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Keunsoo Song, Sangkwon Lee, Dongkyun Kim, Youngbo Shim, Sangil Park, Bokrim Ko, Duckhwa Hong, Yongsuk Joo, Wooyoung Lee, Yongdeok Cho, Wooyeol Shin, Jaewoong Yun, Hyengouk Lee, Jeonghun Lee, Eunryeong Lee, Jaemo Yang, Haekang Jung, Namkyu Jang, Joohwan Cho, Hyeongon Kim:
A 1.1V 2y-nm 4.35Gb/s/pin 8Gb LPDDR4 mobile device with bandwidth improvement techniques. CICC 2014: 1-4

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