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2020 – today
- 2024
[c25]A. Divay, Cédric Dehos, Ismael Charlet, Fred Gaillard, B. Duriez, Xavier Garros, J. Antonijevic, Joycelyn Hai, Nathalie Revil, Jeremie Forest, Vincent Knopik, Florian Cacho, David Roy, X. Federspiel, S. Crémer, Pascal Chevalier:
A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles. IRPS 2024: 4- [c24]Daphnée Bosch, Abygaël Viey, Tadeu Mota Frutuoso, P. Lheritier, C. Licitra, N. Zerhouni, A. Albouy, Laurent Brunet, A. Magalhaes-Lucas, L. M. B. da Silva, H. Boutry, M. Husien Fahmy Taha Abdelrahman, F. Cristiano, R. Gassilloud, M. Ribotta, G. Romano, William Vandendaele, V. Benevent, M. Opprecht, S. Kerdilès, F. Milesi, F. Mazen, Benoit Sklénard, C. Euvrard-Colnat, Johannes Sturm, A. Lambert, C. Candebage, L. Laraignou, F. Boulard, A. Sarrazin, M. De Souza, Christoforos G. Theodorou, Xavier Garros, Perrine Batude:
Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications. VLSI Technology and Circuits 2024: 1-2 - [c23]A. Divay, O. Valorge, C. Dubarry, M. Medbouhi, R. Franiatte, D. Mermin, R. Velard, Y. Gobil, F. Morisot, Erwan Morvan, Ismael Charlet, Luca Lucci, J. Lugo, Xavier Garros:
Hybrid Integration of 3D-RF Interconnects on AlGaN/GaN/Si HEMT RF Transistor featuring 2.2W/mm Psat & 41% PAE @28GHz using a Robust and Cost-Effective Chiplet Heterogeneous Bonding Technique. VLSI Technology and Circuits 2024: 1-2 - [c22]J. Luge-Alvarez, J. B. David, Alexandre Siligaris, Vincent Puyal, G. Moritz, Tadeu Mota Frutuoso, V. Lapras, Claire Fenouillet-Béranger, Laurent Brunet, P. Vincent, Didier Lattard, Xavier Garros, François Andrieu, Perrine Batude:
First Radio-Frequency Circuits Fabricated in Top-Tier of a Full 3D Sequential Integration Process at mmW for 5G Applications. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c21]S. Crémer, N. Pelloux, F. Gianesello, Y. Mourier, G. Haury, Tulio Chaves de Albuquerque, Frederic Monsieur, H. Audouin, C. A. Legrand, C. Diouf, J. Azevedo Goncalves, C. Belem Goncalves, C. Durand, N. Vulliet, L. Berthier, Emeline Souchier, P. Garcia, S. Jan, M. Hello, M. L. Rellier, Patrick Scheer, B. Duriez, Xavier Garros, T. Bordignon, F. Paillardet, Pascal Chevalier:
40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications. ESSDERC 2023: 101-104 - [c20]C. Doyen, V. Yon, Xavier Garros, Luigi Basset, Tadeu Mota Frutuoso, C. Dagon, Cheikh Diouf, X. Federspiel, V. Millon, Frederic Monsieur, C. Pribat, David Roy:
Insight Into HCI Reliability on I/O Nitrided Devices. IRPS 2023: 1-5 - 2022
- [c19]Tadeu Mota Frutuoso, Xavier Garros, Jose Lugo-Alvarez
, Roméo Kom Kammeugne, L. D. M. Zouknak, Abygaël Viey, W. van den Daele, Philippe Ferrari, Fred Gaillard:
Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors. IRPS 2022: 3 - [c18]Joycelyn Hai, Florian Cacho, A. Divay, Estelle Lauga-Larroze, Jean-Daniel Arnould, Jeremie Forest, Vincent Knopik, Xavier Garros:
Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications. IRPS 2022: 4 - [c17]Lauriane Contamin, Mikaël Cassé, Xavier Garros, Fred Gaillard, Maud Vinet, Philippe Galy, André Juge, Emmanuel Vincent, Silvano De Franceschi, Tristan Meunier:
Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K. IRPS 2022: 7 - [c16]M. Arabi, X. Federspiel, Florian Cacho, M. Rafik, S. Blonkowski, Xavier Garros, G. Guibaudo:
Frequency dependant gate oxide TDDB model. IRPS 2022: 25-1 - [c15]Tadeu Mota Frutuoso, Xavier Garros, Perrine Batude, Laurent Brunet, Joris Lacord, Benoit Sklénard, V. Lapras, Claire Fenouillet-Béranger, M. Ribotta, A. Magalhaes-Lucas, J. Kanyandekwe, R. Kies, G. Romano, Edoardo Catapano, Mikaël Cassé, Jose Lugo-Alvarez, Philippe Ferrari, Fred Gaillard:
Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration. VLSI Technology and Circuits 2022: 332-333 - 2021
- [c14]Roméo Kom Kammeugne, Charles Leroux, Tadeu Mota Frutuoso, Jacques Cluzel, Laura Vauche, Cyrille Le Royer, Romain Gwoziecki, Xavier Garros, Fred Gaillard, Matthew Charles, Edwige Bano, Gérard Ghibaudo:
Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs. ESSDERC 2021: 299-302 - [c13]Tadeu Mota Frutuoso, Jose Lugo-Alvarez, Xavier Garros, Laurent Brunet, Joris Lacord, Louis Gerrer, Mikaël Cassé, Edoardo Catapano, Claire Fenouillet-Béranger, François Andrieu, Fred Gaillard, Philippe Ferrari:
Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration. IRPS 2021: 1-5 - [c12]Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent:
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations. IRPS 2021: 1-5
2010 – 2019
- 2019
- [c11]A. P. Nguyen, Xavier Garros, M. Rafik, Florian Cacho, David Roy, Xavier Federspiel, Fred Gaillard:
Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology. IRPS 2019: 1-5 - 2018
- [j4]Xavier Garros, Antoine Laurent, Alexandre Subirats, X. Federspiel, E. Vincent, Gilles Reimbold:
Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors. Microelectron. Reliab. 80: 100-108 (2018) - [c10]M. Rafik, A. P. Nguyen, Xavier Garros, M. Arabi, X. Federspiel, Cheikh Diouf:
AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment. IRPS 2018: 4 - [c9]William Vandendaele, Xavier Garros, Thomas Lorin, Erwan Morvan, A. Torres, René Escoffier, Marie-Anne Jaud, Marc Plissonnier, Fred Gaillard:
A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT. IRPS 2018: 4 - [c8]Xavier Garros, Alexandre Subirats, Gilles Reimbold, Fred Gaillard, Cheikh Diouf, X. Federspiel, Vincent Huard, M. Rafik:
A new method for quickly evaluating reversible and permanent components of the BTI degradation. IRPS 2018: 6-1 - [c7]Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo:
Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). IRPS 2018: 6 - 2017
- [c6]Jessy Micout, Quentin Rafhay, Xavier Garros, Mikaël Cassé, Jean Coignus, Luca Pasini, Cao-Minh Vincent Lu, Nils Rambal, Claire Fenouillet-Béranger, Laurent Brunet, G. Romano, R. Gassilloud, Perrine Batude, Maud Vinet, Gérard Ghibaudo:
Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices. ESSDERC 2017: 144-147 - 2016
- [c5]Christoforos G. Theodorou, Mouenes Fadlallah, Xavier Garros, Charalambos A. Dimitriadis, Gérard Ghibaudo:
Noise-induced dynamic variability in nano-scale CMOS SRAM cells. ESSDERC 2016: 256-259 - 2015
- [c4]Guillaume Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu:
Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. IRPS 2015: 2 - 2014
- [c3]Claire Fenouillet-Béranger, Bernard Previtali, Perrine Batude, Fabrice Nemouchi, Mikaël Cassé, Xavier Garros, Lucie Tosti, Nils Rambal, Dominique Lafond, Hugo Dansas, Luca Pasini, Laurent Brunet, Fabien Deprat, Magali Grégoire, M. Mellier, Maud Vinet:
FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration. ESSDERC 2014: 110-113 - [c2]Guillaume Besnard, Xavier Garros, François Andrieu, Phuong Nguyen, William van den Daele, Patrick Reynaud, Walter Schwarzenbach, Daniel Delprat, Konstantin Bourdelle, Gilles Reimbold, Sorin Cristoloveanu:
Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes. ESSDERC 2014: 226-229 - [c1]Carlos Navarro, Maryline Bawedin, François Andrieu, Jacques Cluzel, Xavier Garros, Sorin Cristoloveanu:
CMOS VT characterization by capacitance measurements in FDSOI PIN gated diodes. ESSDERC 2014: 405-408
2000 – 2009
- 2009
- [j3]Xavier Garros, Mikaël Cassé, M. Rafik, Claire Fenouillet-Béranger, Gilles Reimbold, François Martin, Claudia Wiemer, F. Boulanger:
Process dependence of BTI reliability in advanced HK MG stacks. Microelectron. Reliab. 49(9-11): 982-988 (2009) - 2007
- [j2]Gilles Reimbold, Jérôme Mitard, Xavier Garros, Charles Leroux, Gérard Ghibaudo, François Martin:
Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks. Microelectron. Reliab. 47(4-5): 489-496 (2007) - 2001
- [j1]Nathalie Revil, Xavier Garros:
Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications. Microelectron. Reliab. 41(9-10): 1307-1312 (2001)
Coauthor Index
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