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Journal Articles
- 2016
[j5]André Lange
, Christoph Sohrmann, Roland Jancke, Joachim Haase, Binjie Cheng, Asen Asenov, Ulf Schlichtmann:
Multivariate Modeling of Variability Supporting Non-Gaussian and Correlated Parameters. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 35(2): 197-210 (2016)- 2013
- [j4]Xingsheng Wang, Binjie Cheng, Jente B. Kuang, Andrew R. Brown, Campbell Millar, Asen Asenov:
Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology. IEEE Des. Test 30(6): 18-28 (2013) - [j3]Negin Moezi, Daryoosh Dideban, Binjie Cheng, Scott Roy, Asen Asenov:
Impact of statistical parameter set selection on the statistical compact model accuracy: BSIM4 and PSP case study. Microelectron. J. 44(1): 7-14 (2013) - [j2]Liping Wang, Andrew R. Brown, Binjie Cheng, Asen Asenov:
Analytical Models for Three-Dimensional Ion Implantation Profiles in FinFETs. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 32(12): 2004-2008 (2013) - 2010
- [j1]Binjie Cheng, Daryoosh Dideban, Negin Moezi, Campbell Millar, Gareth Roy, Xingsheng Wang, Scott Roy, Asen Asenov:
Statistical-Variability Compact-Modeling Strategies for BSIM4 and PSP. IEEE Des. Test Comput. 27(2): 26-35 (2010)
Conference and Workshop Papers
- 2016
- [c19]A. Asenov, Yangang Wang, Binjie Cheng, Xingsheng Wang, Plamen Asenov, Talib Al-Ameri, Vihar P. Georgiev:
Nanowire transistor solutions for 5nm and beyond. ISQED 2016: 269-274 - 2015
- [c18]Razaidi Hussin, Louis Gerrer, Jie Ding, Liping Wang, Salvatore M. Amoroso, Binjie Cheng, Dave Reid, Pieter Weckx, Marko Simicic, Jacopo Franco, Annelies Vanderheyden, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov:
Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. ESSDERC 2015: 238-241 - 2014
- [c17]Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Asen Asenov:
Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability. ESSDERC 2014: 349-352 - 2013
- [c16]Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Jente B. Kuang, Sani R. Nassif, Asen Asenov:
Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability. ESSDERC 2013: 234-237 - [c15]Binjie Cheng, Xingsheng Wang, Andrew R. Brown, Jente B. Kuang, Dave Reid, Campbell Millar, Sani R. Nassif, Asen Asenov:
SRAM device and cell co-design considerations in a 14nm SOI FinFET technology. ISCAS 2013: 2339-2342 - 2012
- [c14]Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Asen Asenov:
Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design. ESSDERC 2012: 113-116 - [c13]Esteve Amat, A. Asenov, Ramon Canal, Binjie Cheng, J.-Ll. Cruz, Zoran Jaksic, Miguel Miranda, Antonio Rubio, Paul Zuber:
Analysis of FinFET technology on memories. IOLTS 2012: 169 - [c12]Tong Boon Tang, Alan F. Murray, Binjie Cheng, Asen Asenov:
A framework to study time-dependent variability in circuits at sub-35nm technology nodes. ISCAS 2012: 1568-1571 - 2011
- [c11]Asen Asenov, Andrew R. Brown, Binjie Cheng:
Statistical aspects of NBTI/PBTI and impact on SRAM yield. DATE 2011: 1480-1485 - [c10]Nivard Aymerich, A. Asenov, Andrew R. Brown, Ramon Canal, Binjie Cheng, Joan Figueras, Antonio González, Enric Herrero, S. Markov, Miguel Miranda, Peyman Pouyan, Tanausú Ramírez, Antonio Rubio, Elena I. Vatajelu, Xavier Vera, Xingsheng Wang, Paul Zuber:
New reliability mechanisms in memory design for sub-22nm technologies. IOLTS 2011: 111-114 - [c9]Feng Hong, Binjie Cheng, Scott Roy, David R. S. Cumming:
An analytical mismatch model of nano-CMOS device under impact of intrinsic device variability. ISCAS 2011: 2257-2260 - 2010
- [c8]Asen Asenov, Binjie Cheng, Daryoosh Dideban, Urban Kovac, Negin Moezi, Campbell Millar, Gareth Roy, Andrew R. Brown, Scott Roy:
Modeling and simulation of transistor and circuit variability and reliability. CICC 2010: 1-8 - [c7]Binjie Cheng, Daryoosh Dideban, Negin Moezi, Campbell Millar, Gareth Roy, Xingsheng Wang, Scott Roy, Asen Asenov:
Capturing intrinsic parameter fluctuations using the PSP compact model. DATE 2010: 650-653 - [c6]Tong Boon Tang, Alan F. Murray, Binjie Cheng, Asen Asenov:
Statistical NBTI-effect prediction for ULSI circuits. ISCAS 2010: 2494-2497 - [c5]Touqeer Azam, Binjie Cheng, David R. S. Cumming:
Variability resilient low-power 7T-SRAM design for nano-scaled technologies. ISQED 2010: 9-14 - 2009
- [c4]Noor Ain Kamsani, Binjie Cheng, Scott Roy, Asen Asenov:
Impact of Random Dopant Induced Statistical Variability on Inverter Switching Trajectories and Timing Variability. ISCAS 2009: 577-580 - 2007
- [c3]Binjie Cheng, Scott Roy, A. Asenov:
The scalability of 8T-SRAM cells under the influence of intrinsic parameter fluctuations. ESSCIRC 2007: 93-96 - 2005
- [c2]Nor Hisham Hamid, Alan F. Murray, David I. Laurenson, Scott Roy, Binjie Cheng:
Probabilistic computing with future deep sub-micrometer devices: a modelling approach. ISCAS (3) 2005: 2510-2513 - 2004
- [c1]Binjie Cheng, Scott Roy, Asen Asenov:
The impact of random doping effects on CMOS SRAM cell. ESSCIRC 2004: 219-222
Coauthor Index
aka: Asen Asenov
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