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ORCIDAntonio Stocco
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Books and Theses
- 2012
[b1]Antonio Stocco:
Reliability and failure mechanisms of GaN HEMT devices suitable for high-frequency and high-power applications. University of Padua, Italy, 2012
Journal Articles
- 2015
- [j5]Davide Bisi
, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni:
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. Microelectron. Reliab. 55(9-10): 1662-1666 (2015) - 2014
- [j4]Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni:
Proton induced trapping effect on space compatible GaN HEMTs. Microelectron. Reliab. 54(9-10): 2213-2216 (2014) - [j3]Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni:
Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. Microelectron. Reliab. 54(9-10): 2237-2241 (2014) - 2012
- [j2]Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso:
Single- and double-heterostructure GaN-HEMTs devices for power switching applications. Microelectron. Reliab. 52(9-10): 2426-2430 (2012) - 2009
- [j1]Nicolo Ronchi, Franco Zanon, Antonio Stocco, Augusto Tazzoli, Enrico Zanoni, Gaudenzio Meneghesso:
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test. Microelectron. Reliab. 49(9-11): 1207-1210 (2009)
Conference and Workshop Papers
- 2014
- [c2]Davide Bisi, Antonio Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni:
Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs. ESSDERC 2014: 389-392 - 2013
- [c1]Davide Bisi, Matteo Meneghini, Antonio Stocco, Giulia Cibin, Alessio Pantellini, Antonio Nanni, Claudio Lanzieri, Enrico Zanoni, Gaudenzio Meneghesso:
Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. ESSDERC 2013: 61-64
Coauthor Index
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